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EP0240436A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

DC voltage multiplier which can be integrated into a semiconductor structure

Assignee: Thales SA
•
Filing: 1987-04-03
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Granted: —
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Expires: 2007-04-03
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Abstract

Abstract Translated from French L'invention concerne un multiplicateur de tension continue pouvant être intégré à une structure semiconductrice. Le multiplicateur comprend un condensateur (C) se chargeant et se déchargeant au rythme d'un signal d'horloge (S), un transistor MOS à déplétion (16) monté en résistance et permettant la décharge du condensateur (C). L'invention permet l'intégration du multiplicateur sur un substrat semiconducteur et notamment pour la commande d'un VD MOS (1). The invention relates to a DC voltage multiplier which can be integrated into a semiconductor structure. The multiplier comprises a capacitor (C) charging and discharging at the rate of a clock signal (S), a depletion MOS transistor (16) mounted in resistance and allowing the discharge of the capacitor (C). The invention allows the integration of the multiplier on a semiconductor substrate and in particular for the control of a VD MOS (1).

Inventors

  • 👤 Bruno Nadd

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 19:57
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/811; H02; H02M; H02M3/00; H02M3/02; H02M3/04; H02M3/06; H02M3/07; H03; H03K; H03K17/00; H03K17/06; H03K17/063; H03K17/51; H03K17/56; H03K17/687; H03K17/30; H03K2017/307; H03K2217/00; H03K2217/0081

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

FR2458936A1 Cited
EP0134731A1 Cited

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