Patent EP0230788A1 successfully refreshed from Google Patents.
EP0230788A1
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Method for preparation of multi-layer structure film
Assignee: Canon Inc
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Filing: 1986-12-24
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Granted: —
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Expires: 2006-12-24
Abstract
Abstract A method for preparing a multi-layer structure film by forming a deposited film according to the chemical vapor deposition method comprises introducing a subjective starting material gas (A) which is the major flow rate component and an objective starting material gas (B) which is the minor flow rate component and hydrogen externally activated into a reaction space and controlling periodically the amount of said objective starting material gas (B) introduced to thereby form a deposited film with a multi-layer structure.
Inventors
- 👤 Shunichi Ishihara
- 👤 Jun-Ichi Hanna
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 20:46
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2923; C; C23; C23C; C23C16/00; C23C16/22; C23C16/44; C23C16/448; C23C16/452; H10P14/24; H10P14/2902; H10P14/2905; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3208; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3411
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
81 words
A method for preparing a multi-layer structure film by forming a deposited film according to the chemical vapor deposition method, which comprises introducing a subjective starting material gas (A) which is the major flow rate component and an objective starting material gas (B) which is the minor flow rate component and hydrogen externally activated into a reaction space and controlling periodically the amount of said objective starting material gas (B) introduced to thereby form a deposited film with a multi-layer structure.
Claim 2
Independent Claim
81 words
A method for preparing a multi-layer structure film by forming a deposited film according to the chemical vapor deposition method, which comprises introducing a subjective starting material gas (A) which is the major flow rate component and an objective starting material gas (B) which is the minor flow rate component and hydrogen externally activated into a reaction space and controlling periodically the amount of said objective starting material gas (B) introduced to thereby form a deposited film with a multi-layer structure.
Claim 3
Independent Claim
28 words
The method according to claim l, wherein each layer of the multi-layer structure film has a layer thickness in the range of from l0 Å to 200 Å.
Claim 4
Independent Claim
35 words
The method according to claim l, wherein relative to the amount (a) of the subjective starting material gas (A) introduced, the amount b of the objective starting material gas (B) is made l/2(a) or less.
Claim 5
Independent Claim
19 words
The method according to claim l, wherein a silicon compound is used as the subjective starting material gas (A).
Claim 6
Dependent Claim
19 words
The method according to claim 4, wherein a germanium compound is used as the objective starting material gas (B).
Claim 7
Dependent Claim
19 words
The method according to claim 4, wherein a carbon compound is used as the objective starting material gas (B).
Claim 8
Independent Claim
23 words
The method according to any one of claims 4 to 6, wherein hydrogen gas is contained in the subjective starting material gas (A).
Claim 9
Independent Claim
23 words
The method according to any one of claims 4 to 6, wherein hydrogen gas is contained in the objective starting material gas (B).
References Cited (Backward Citations)
DE2538300A1
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EP0138332A1
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US4539934A
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FR2555206A1
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DE3509910A1
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