EP0224993A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
A method of operating a solid-state image sensor
Assignee: Sharp Corp
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Filing: 1986-09-03
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Granted: —
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Expires: 2006-09-03
Abstract
Abstract A solid-state image sensor having a plurality of unit cells, each of which comprises a photosensitive area (24, 25) and a CCD register (23) for the transfer of a signal charge generated in said photosensitive area (24, 25), wherein both said photosensitive area (24, 25) and said CCD register (23) are disposed on a first layer (22), having a different polarity from the charging polarity of said signal charge, which is disposed on a substrate (21) having the same polarity as said signal charge, said CCD register (23) being underlaid by a second layer (33) having the same polarity as the first layer (22) and containing the impurity in a higher concentration than that of the first layer (22).
Inventors
- 👤 Shigehiro Miyatake
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 05:50
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/158; H10F39/153
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
105 words
A solid-state image sensor having a plurality of unit cells, each of which comprises a photosensitive area and a CCD register for the transfer of a signal charge generated in said photosensitive area, wherein both said photosensitive area and said CCD register are disposed on a first layer, having a different polarity from the charging polarity of said signal charge, which is disposed on a substrate having the same polarity as said signal charge, said CCD register being underlaid by a second layer having the same polarity as the first layer and containing the impurity in a higher concentration than that of the first layer.
Claim 2
Dependent Claim
105 words
A solid-state image sensor having a plurality of unit cells, each of which comprises a photosensitive area and a CCD register for the transfer of a signal charge generated in said photosensitive area, wherein both said photosensitive area and said CCD register are disposed on a first layer, having a different polarity from the charging polarity of said signal charge, which is disposed on a substrate having the same polarity as said signal charge, said CCD register being underlaid by a second layer having the same polarity as the first layer and containing the impurity in a higher concentration than that of the first layer.
Claim 3
Dependent Claim
20 words
A solid-state image sensor according to claim 1, wherein said photosensitive area has the same polarity as said signal charge.
Claim 4
Dependent Claim
39 words
A solid-state image sensor according to claim 1 or 2, wherein the impurity concentration in the region of the outer surface of said photosensitive area is higher than that in the region of said photosensitive area facing said substrate.
Claim 5
Dependent Claim
56 words
A solid-state image sensor according to any preceding claim, wherein the region of the outer surface of said photosensitive area contains a layer having a different polarity from the charging polarity of said signal charge and the region of said photosensitive area facing said substrate contains a layer having the same polarity as said signal charge.
Claim 6
Dependent Claim
63 words
A solid-state image sensor according to any preceding claim, wherein depletion is attained not only in the region of said layer positioned between said substrate and said photosensitive area but also in the region of said layer positioned between said substrate and said CCD register by the application of a reverse bias voltage between said substrate and said layer formed on said substrate.
Claim 7
Dependent Claim
19 words
A solid-state image sensor according to any preceding claim wherein said CCD register is composed of a buried channel.
Claim 8
Dependent Claim
47 words
A solid-state image sensor according to claim 3, or any of claims 4 to 6 when appended to claim 3, wherein the region of the outer surface of said photosensitive area is formed by a self-alignment technique using, as a mask, an electrode for said CCD register.
Claim 9
Dependent Claim
70 words
A solid-state image sensor according to claim 6, or claim 7 when appended to claim 6, wherein the impurity concentration in the outer surface of said photosensitive area is higher than that in the region of said photosensitive area facing said substrate, and moreover, the formation of the inner layer of said photosensitive area facing said substrate is simultaneous with the formation of said buried channel of the CCD register.
References Cited (Backward Citations)
US4498013A
Cited
EP0173542A2
Cited
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