EP0173542A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
A solid-state image sensor
Assignee: Sharp Corp
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Filing: 1985-08-21
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Granted: —
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Expires: 2005-08-21
Abstract
Abstract A solid-state image sensor having a plurality of unit cells, each of which comprises a photosensitive area (24, 25) and a CCD register (23) for the transfer of a signal charge generated in said photosensitive area (24, 25), both said photosensitive area (24, 25) and said CCD register (23) are disposed on a layer (22), having a different polarity from the charging polarity of said signal charge, which is disposed on a substrate (21) having the same polarity as said signal charge.
Inventors
- 👤 Shigehiro Miyatake
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 10:13
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/158; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/2823; H10F39/153
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
72 words
A solid-state image sensor having a plurality of unit cells, each of which comprises a photosensitive area and a CCD register for the transfer of a signal charge generated in said photosensitive area, both said photosensitive area and said CCD register being disposed on a layer, having a different polarity from the charging polarity of said signal charge, which is disposed on a substrate having the same polarity as said signal charge.
Claim 2
Dependent Claim
72 words
A solid-state image sensor having a plurality of unit cells, each of which comprises a photosensitive area and a CCD register for the transfer of a signal charge generated in said photosensitive area, both said photosensitive area and said CCD register being disposed on a layer, having a different polarity from the charging polarity of said signal charge, which is disposed on a substrate having the same polarity as said signal charge.
Claim 3
Dependent Claim
20 words
A solid-state image sensor according to claim 1, wherein said photosensitive area has the same polarity as said signal charge.
Claim 4
Dependent Claim
37 words
A solid-state image sensor according to claim 2, wherein the impurity concentration in the region of the outer surface of said photosensitive area is higher than that in the region of said photosensitive area facing said substrate.
Claim 5
Dependent Claim
55 words
A solid-state image sensor according to claim 1, wherein the region of the outer surface of said photosensitive area contains a layer having a different polarity from the charging polarity of said signal charge and the region of said photosensitive area facing said substrate contains a layer having the same polarity as said signal charge.
Claim 6
Dependent Claim
62 words
A solid-state image sensor according to claim 1, wherein depletion is attained not only in the region of said layer positioned between said substrate and said photosensitive area but also in the region of said layer positioned between said substrate and said CCD register by the application of a reverse bias voltage between said substrate and said layer formed on said substrate.
Claim 7
Dependent Claim
18 words
A solid-state image sensor according to claim 1, wherein said CCD register is composed of a buried channel.
Claim 8
Dependent Claim
35 words
A solid-state image sensor according to claim 3, wherein the region of the outer surface of said photosensitive area is formed by a self-alignment technique using, as a mask, an electrode for said CCD register.
Claim 9
Dependent Claim
62 words
A solid-state image sensor according to claim 6, wherein the impurity concentration in the outer surface of said photosensitive area is higher than that in the region of said photosensitive area facing said substrate, and moreover, the formation of the inner layer of said photosensitive area facing said substrate is simultaneous with the formation of said buried channel of the CCD register.
References Cited (Backward Citations)
No citation records indexed.
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