Process for selectively filling contact holes made by etching in insulating layers with electrically conductive materials for the manufacture of high-density integrated semiconductor circuits, and apparatus used for this process

Abstract

Abstract 1. Process for selectively filling contact holes or through holes made by etching in insulating layers with metallically conductive materials such as are used, in particular, for the manufacture of high-density integrated semiconductor circuits, for forming electric conductor tracks on structured semiconductor substrates, characterized by the sequence of the following process steps : a) coating of the structured semiconductor substrates (11, 12), provided with the contact holes (13) and/or through holes, over the entire surface with a silicide (16) of a high-melting metal by chemical deposition from the gas phase, b) anisotropic etching of the substrate (10, 11, 12) in a vacuum until the silicide layer (16) at the horizontal surfaces of the substrate (10, 11) is removed again, and c) filling the contact holes (13) and/or through holes with the metallically conductive material (17) by selective chemical deposition from the gas phase.

Inventors

• 👤 Konrad Dr. Hieber
• 👤 Manfred Stolz
• 👤 Claudia Wieczorek

Bibliographic Details