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EP0192850A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Monolithic integrated optoelectronic semiconductor device

Assignee: Siemens AG
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Filing: 1985-12-17
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Granted: —
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Expires: 2005-12-17
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Abstract

Abstract Translated from German Monolithisch integriertes optoelektronisches Halbleiterbauelement, bei dem ein Lichtwellenleiter (2) und ein Fotodetektor (1) auf einander gegenüberliegenden Seiten eines Halbleitersubstrats (3) aufgebracht sind, und bei dem ein Koppelelement (4) vorgesehen ist, welches Strahlung aus dem Wellenleiter (2) auskoppelt und durch das Substrat (3) dem Fotodetektor (1) zuführt. Monolithically integrated optoelectronic semiconductor component in which an optical waveguide (2) and a photodetector (1) are applied to opposite sides of a semiconductor substrate (3), and in which a coupling element (4) is provided which couples radiation out of the waveguide (2) and fed through the substrate (3) to the photodetector (1).

Inventors

  • 👤 Reiner Dr. Trommer

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-05 16:23
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/24; G02B6/42; G02B6/10; G02B6/12; G02B6/12002; G02B6/4201; G02B6/4204; G02B6/4214

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

US3871742A Cited
US4163953A Cited
DE2744128A1 Cited

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