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US4163953A Expired / Lapsed US ⏱️ 0.0 years remaining

Double heterostructure laser for direct coupling to an optical fiber

Assignee: Nortel Networks Ltd
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Filing: 1977-07-07
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Granted: 1979-08-07
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Expires: 1997-07-07
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Abstract

Abstract A double heterostructure laser has a first confining layer on the substrate, an active layer on the first confining layer and a second confining layer on the active layer. A groove is etched through the second confining layer and active layer to form a reflecting surface at approximately 45° to the plane of the active layer. The resonant cavity is formed between a cleaned end surface and a surface at the substrate. A hole through the substrate to the first confining layer is aligned with the reflecting surface for emission therethrough.

Inventors

  • 👤 Anthony J. Springthorpe
  • 👤 John C. Dyment

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 23:45
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/42; G; G02; G02B; G02B6/00; G02B6/24; G02B6/42; G02B6/4201; G02B6/4202; G02B6/4204; G02B6/4214; H01S5/02; H01S5/026; H01S5/10; H01S5/18; H01S5/185; H01S3/00; H01S3/005; H01S5/005

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 205 words
A laser having a semiconductor substrate and a double heterostructure on a surface of said substrate, said structure comprising; a first confining layer of semiconductor material on said surface of said substrate, an active layer of semiconductor material on said first confining layer and a second confining layer on said active layer, said first confining layer being of the same conductivity type as said substrate; said second confining layer being of the opposite conductivity type as said first confining layer and said active layer being of the same conductivity type as one of said confining layers to form a p-n junction between said active layer and one of said confining layers; a cleaved end surface on said structure, said end surface extending normal to the plane of said active layer; a reflecting surface extending through said second confining layer and said active layer and inclined relative to the plane of said active layer to form a resonant cavity between said end surface and a further surface at said substrate surface; a hole through said substrate to said first confining layer, said hole aligned with said reflecting surface for emission of light therethrough; and electrical contact means for applying a forward bias to said active layer.
Claim 2
Dependent Claim 205 words
A laser having a semiconductor substrate and a double heterostructure on a surface of said substrate, said structure comprising; a first confining layer of semiconductor material on said surface of said substrate, an active layer of semiconductor material on said first confining layer and a second confining layer on said active layer, said first confining layer being of the same conductivity type as said substrate; said second confining layer being of the opposite conductivity type as said first confining layer and said active layer being of the same conductivity type as one of said confining layers to form a p-n junction between said active layer and one of said confining layers; a cleaved end surface on said structure, said end surface extending normal to the plane of said active layer; a reflecting surface extending through said second confining layer and said active layer and inclined relative to the plane of said active layer to form a resonant cavity between said end surface and a further surface at said substrate surface; a hole through said substrate to said first confining layer, said hole aligned with said reflecting surface for emission of light therethrough; and electrical contact means for applying a forward bias to said active layer.
Claim 3
Dependent Claim 31 words
A laser as claimed in claim 1, said resonant cavity extending between said end surface of said active layer and the surface of said first confining layer contiguous with said substrate.
Claim 4
Dependent Claim 21 words
A laser as claimed in claim 1, said reflecting surface inclined at approximately 45° to said plane of said active layer.
Claim 5
Dependent Claim 19 words
A laser as claimed in claim 1, including a lens structure on said further surface at said substrate surface.
Claim 6
Dependent Claim 19 words
A laser as claimed in claim 1, said substrate of GaAs, said active layer and confining layers of GaAlAs.
Claim 7
Dependent Claim 42 words
A laser as claimed in claim 1, including a Vee shaped groove etched through said second confining layer and said active layer, and a layer of SiO 2 on one of the surfaces of said V-shaped groove to form said reflecting surface.
Claim 8
Dependent Claim 17 words
A laser as claimed in claim 1, including a heat sink layer on said second confining layer.

References Cited (Backward Citations)

US3981023A Cited
US3996492A Cited
US3996528A Cited
US4136928A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1982-08-06 1983-02-05 1983-08-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1986-08-06 1987-02-05 1987-08-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1990-08-06 1991-02-05 1991-08-07 $7700.00 Window Closed / Lapsed

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