EP0163384A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Power source lines arrangement in an integrated circuit
Assignee: Toshiba Corp
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Filing: 1985-04-01
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Granted: —
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Expires: 2005-04-01
Abstract
Abstract A semiconductor integrated circuit having, for instance, a power source side conductor (11) and an earth side conductor (22) which are constructed such that the two conductors (11, 22) are formed into two layers mutually laminated in parallel, and a dielectric substance (30) is interposed between the two layers for providing a capacitance. In this manner, the integrated circuit is operable such that a comparatively large capacitor is connected in the power of source circuit thereof.
Inventors
- 👤 Fumio Horiguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 10:55
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/495; H10W20/496; H10B; H10B12/00; H10D; H10D88/00; H10D89/00; H10D89/211; H10D89/213; H10W20/41; H10W20/427
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
80 words
A semiconductor integrated circuit wherein at least two connection layers (10, 20) held at different potentials are provided on a substrate(60) formed with a number of semiconductor active elements (40, 50) for leading power supply to said elements characterised in that said two connection layers (10, 20) are laminated in parallel with each other (11, 21 or 12, 22) and a dielectric substance (30) is interposed between said two connection layers (10, 20) for providing a capacitance element (C) therebetween.
Claim 2
Dependent Claim
80 words
A semiconductor integrated circuit wherein at least two connection layers (10, 20) held at different potentials are provided on a substrate(60) formed with a number of semiconductor active elements (40, 50) for leading power supply to said elements characterised in that said two connection layers (10, 20) are laminated in parallel with each other (11, 21 or 12, 22) and a dielectric substance (30) is interposed between said two connection layers (10, 20) for providing a capacitance element (C) therebetween.
Claim 3
Dependent Claim
38 words
A semiconductor integrated circuit according to claim 1 wherein a first layer of said laminated connection layers is a first connection layer (11) and a second layer of said laminated connection layers is a second connection layer (22).
Claim 4
Dependent Claim
38 words
A semiconductor integrated circuit according to claim 1 wherein a first layer of said laminated connection layers is a second connection layer (21) and a second layer of said laminated connection layers is a first conneciton layer (12).
Claim 5
Dependent Claim
33 words
A semiconductor integrated circuit according to claim 2 or 3 wherein said first and second connection layers (11, 22 or 12, 21) are made of a metal such as aluminum or the like.
Claim 6
Dependent Claim
58 words
A semiconductor integrated circuit according to claim 2 or 3 wherein either one of said first and second connection layers (11, 22 or 12, 21) is made of a metal such as aluminum or the like, while the other of the connection layers (11, 22 or 12, 21) is made of a material such as polysilicon or polyside.
Claim 7
Dependent Claim
16 words
A semiconductor integrated circuit according to claim 1 wherein said dielectric substance (30) is SiO 2
Claim 8
Dependent Claim
30 words
A semiconductor integrated circuit according to claim 1 wherein said dielectric substance (30) is a material such as a nitride or Ta 2 0 5 having a high dielectric constant.
Claim 9
Dependent Claim
40 words
A semiconductor integrated circuit according to claim 1 wherein said capacitance provided between said first and second connection layers is of a value maintaining a voltage drop in said connection layers less than 10 % of a power source voltage.
Claim 10
Dependent Claim
40 words
A semiconductor integrated circuit according to claim 1 wherein said capacitance provided between said first and second connection layers is of a value maintaining a voltage drop in said connection layers less than 20 % of a power source voltage.
Claim 11
Dependent Claim
40 words
A semiconductor integrated circuit according to claim 1 wherein said capacitance provided between said first and second connection layers is of a value maintaining a voltage drop in said connection layers less than 50 % of a power source voltage.
References Cited (Backward Citations)
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