Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
57 words
A display (140; 200; 250) which includes first and second address lines (154; 156; 216; 216; 252; 254), first and second pixel electrodes (146; 150; 206; 214; 250; 260) with light influencing material (148; 210; 262) disposed therebetween; characterized by first and second isolation devices (156, 166; 219, 233; 264, 266) electrically connected between the address lines.
Claim 2
Dependent Claim
57 words
A display (140; 200; 250) which includes first and second address lines (154; 156; 216; 216; 252; 254), first and second pixel electrodes (146; 150; 206; 214; 250; 260) with light influencing material (148; 210; 262) disposed therebetween; characterized by first and second isolation devices (156, 166; 219, 233; 264, 266) electrically connected between the address lines.
Claim 3
Dependent Claim
24 words
A display according to claim 1 further characterized by said isolation devices (150, 166; 219, 233; 264, 266) are formed from deposited semiconductor material.
Claim 4
Dependent Claim
24 words
A display according to claim 2 further characterized by said deposited semiconductor material being on amorphous semiconductor silicon alloy which includes hydrogen or fluorine.
Claim 5
Dependent Claim
23 words
A display according to any of the preceding claims characterized in that the isolation devices (150, 166; 219, 233; 264, 266) conprise diodes.
Claim 6
Dependent Claim
55 words
A display according to claim 4 further characterized by said diodes (158, 166) including a first doped semiconductor region (184, 254'), on intrinsic semiconductor region (186, 256') overlying said first doped region, and a second doped semiconductor region (188, 250') overlying said intrinsic region, said first and second doped semiconductor regions being opposite in conductivity.
Claim 7
Dependent Claim
35 words
A display according to any of the preceding claims, further characterized by said electrodes (146, 152; 206, 214; 258, 260) being formed from a transparent conductive material; said transparent conductive material being indium tin oxide.
Claim 8
Dependent Claim
32 words
A display according to any of the preceding claims, further characterized by said first and second isolation devices (158, 166; 219, 233; 264, 266) each comprising a plurality of series connected diodes.
Claim 9
Dependent Claim
26 words
A display according to any of the preceding claims, further characterized by said light influencing material (148; 210, 262) being a nematic liquid crystal display material.
Claim 10
Dependent Claim
184 words
A display as claimed in any of the preceding claims, characterized in that the first pixel electrode (152; 214; 258) and the first address line (154; 216; 252) are formed on the insluative substrate (150; 212); that the first isolation device (158; 219; 264) are formed on said first address line (154; 216; 252); that the second isolation device (166; 233; 266) is formed on said first pixel electrode (152; 214; 258); that the second address line (156; 218; 254) is in electrical connection with said second isolation device (166; 233; 266) on the side thereof opposite said first pixel electrode (152, 214, 258); that a deposit of conductive material (164; 230) couples said first isolation device (158; 219; 264) on the side opposite said first address line (154; 216; 252) to said first pixel electrode (152; 214; 258); that the second pixel electrode (146; 206; 260) is spaced from and substantially parallel to said first pixel electrode (152; 214; 258) and that the light influencing material (148; 210; 262) is disposed between at least said pixel electrodes (146, 152; 206, 216; 258, 260).
Claim 11
Dependent Claim
120 words
A display according to any of the preceding claims further characterized by first means for coupling said first pluraltiy of isolation devices (264) between said first address line (252) and said first pixel electrode (258) and second means for coupling said second plurality of isolation devices (266) between said second address line (254) and said second pixel electrode (260), by second means for coupling said second plurality of isolation devices (266) between said first pixel electrode (258) and said second address line (254); said first plurality of isolation devices (264) being formed on a region of said first address line (252) and said second plurality of isolation devices (266) being formed on a region of said first pixel electrode (258).
Claim 12
Dependent Claim
66 words
A display according to claim 10 further characterized by: said vertically arrayed isolation devices (268, 270, 272, 274, 276, 278) of said first plurality and said second plurality being series coupled and wherein said first plurality of isolation devices and said second plurality of isolation devices will support a reverse bias voltage greater than a reverse bias voltage supportable by only one of said isolation devices.
Claim 13
Dependent Claim
124 words
A display according to claim 10 further characterized by: said vertically arrayed isolation devices (220, 222, 224) of said first plurality being series coupled, with said first plurality of isolation devices displaying a forward biased voltage drop greater than a forward biased voltage drop displayed by only one of said isolation devices and said vertically arrayed isolation devices of said second plurality (234, 236, 238) being series coupled, with said second plurality of isolation devices displaying a forward biased voltage drop greater than a forward biased voltage drop displayed by only one of said isolation devices and further characterized by said first and second plurality of isolation devices (219, 233) being parallel coupled between said first address line (216) and said first electrode (206).
Claim 14
Dependent Claim
41 words
A display according to claim 12 further characterized by said first and second isolation devices (219, 233) being parallel coupled in reverse relation with one of said isolation devices being reverse biased when the other said isolation device is forward biased.
Claim 15
Dependent Claim
90 words
A display as claimed in any of the preceding claims formed as a subassembly for a display pixel (250) characterized in that a diode ring (256) is coupled by means for electrical connection between said address line (252) and said pixel electrode (258) wherein said diode ring (256) includes at least first and second diodes (264, 266) parallel coupled with reverse polarity with said first diode (264) formed on a region of said address line (252) and said second diode (266) formed on a region of said pixel electrode (258).
Claim 16
Dependent Claim
84 words
A display subassembly according to claim 14 further characterized by: third and fourth diodes, said third diode being formed on said first diode (264) and said fourth diode being formed on said second diode (266); with said third diode series coupled to said first diode, said first (264) third diodes being vertically arrayed with respect to said substrate (212a), and with said second diode series coupled to said fourth diode, said second and fourth diodes being vertically arrayed with respect to said substrate (212a).
Claim 17
Dependent Claim
38 words
A display subassembly according to any of the preceding claims further characterized by each said isolation devices (219, 233) includes a selectivey shaped deposited metal pad (246; 248) affixed to an end thereof to provide improved coupling thereto.
Claim 18
Dependent Claim
26 words
A display subassembly according to any of the preceding claims characterized in that each diode (220, 222, 224, 234, 236, 238) is a Schottky barrier diode.
Claim 19
Independent Claim
286 words
A method of making a display or a subassembly thereof of the type including at least one pixel having a pair of isolation devices, said method characterized by the following steps of: (A) providing an insulative substrate; (B) depositing a conductive layer over said substrate; (C) depositing a first metal layer over said conductive material; (D) depositing a first doped semiconductor layer over said first metal layer; (E) depositing a substantially intrinsic semiconductor layer over said first doped layer; (F) depositing a second doped semiconductor layer over said intrinsic layer, said second doped layer being opposite in conductivity with respect to said first doped layer; (G) depositing a second metal layer over said second doped semiconductor layer; (H) removing portions of said second metal layer to leave discrete portions of said second metal remaining to define the location of said isolating devices; (I) removing portions of said semiconductor layers while using said second metal discrete portions as a mask to form said isolation devices; (J) removing portions of said first metal layer to form a first address lead with one of said isolation devices thereon; (K) removing portions of said conductive material to form a first pixel electrode with the other said isolation device thereon; (L) forming an interconnect lead to coupie said one isolation device on the side thereof opposite said first address lead to said first pixel electrode; (M) forming a second address lead insulated from said first address lead and coupled to said other isolation device on the side thereof opposite said first pixel electrode; (N) forcing a second pixel electrode for example spaced from and substantially parallel to said first pixel electrode; and (0) applying light influencing material between said pixel electrodes.
Claim 20
Independent Claim
286 words
A method of making a display or a subassembly thereof of the type including at least one pixel having a pair of isolation devices, said method characterized by the following steps of: (A) providing an insulative substrate; (B) depositing a conductive layer over said substrate; (C) depositing a first metal layer over said conductive material; (D) depositing a first doped semiconductor layer over said first metal layer; (E) depositing a substantially intrinsic semiconductor layer over said first doped layer; (F) depositing a second doped semiconductor layer over said intrinsic layer, said second doped layer being opposite in conductivity with respect to said first doped layer; (G) depositing a second metal layer over said second doped semiconductor layer; (H) removing portions of said second metal layer to leave discrete portions of said second metal remaining to define the location of said isolating devices; (I) removing portions of said semiconductor layers while using said second metal discrete portions as a mask to form said isolation devices; (J) removing portions of said first metal layer to form a first address lead with one of said isolation devices thereon; (K) removing portions of said conductive material to form a first pixel electrode with the other said isolation device thereon; (L) forming an interconnect lead to coupie said one isolation device on the side thereof opposite said first address lead to said first pixel electrode; (M) forming a second address lead insulated from said first address lead and coupled to said other isolation device on the side thereof opposite said first pixel electrode; (N) forcing a second pixel electrode for example spaced from and substantially parallel to said first pixel electrode; and (0) applying light influencing material between said pixel electrodes.
Claim 21
Independent Claim
266 words
A method of making a display of the type including at least one pixel having a pair of diode isolation devices and light influencing material, said method characterized by the steps of: (A) providing an insulative substrate; (3) depositing a conductive layer over said substrate; (C) depositing a first metal layer over said conductive material; (D) depositing first and second doped semiconductor layers over said metal layer, said second doped layer being opposite in conductivity with respect to said first doped layer; (E) depositing a second metal layer over said second doped semiconductor layer; (F) removing portions of said second metal layer to leave discrete portions of said second metal remaining to define the location of said diode isolation device; (G) removing portions of said semiconductor layers while using said second metal discrete portions as a mask to form said diode isolation devices; (H) removing portions of said first metal layer to form a first address lead with one of said diode isolation devices thereon; (I) removing portions of said conductive material to form a first pixel electrode with the other said diode isolation device thereon; (J) forming an interconnect lead to couple said one diode isolation device on the side thereof opposite said first address lead to said first pixel electrode; (K) forming a second address lead insulated from said first address lead and coupled to said other diode isolation device on the side thereof opposite said first pixel electrode; (L) forming a second pixel electrode spaced from and substantially parallel to said first pixel electrode; (M) applying light influencing material between said pixel electrode.
Claim 22
Independent Claim
266 words
A method of making a display of the type including at least one pixel having a pair of diode isolation devices and light influencing material, said method characterized by the steps of: (A) providing an insulative substrate; (3) depositing a conductive layer over said substrate; (C) depositing a first metal layer over said conductive material; (D) depositing first and second doped semiconductor layers over said metal layer, said second doped layer being opposite in conductivity with respect to said first doped layer; (E) depositing a second metal layer over said second doped semiconductor layer; (F) removing portions of said second metal layer to leave discrete portions of said second metal remaining to define the location of said diode isolation device; (G) removing portions of said semiconductor layers while using said second metal discrete portions as a mask to form said diode isolation devices; (H) removing portions of said first metal layer to form a first address lead with one of said diode isolation devices thereon; (I) removing portions of said conductive material to form a first pixel electrode with the other said diode isolation device thereon; (J) forming an interconnect lead to couple said one diode isolation device on the side thereof opposite said first address lead to said first pixel electrode; (K) forming a second address lead insulated from said first address lead and coupled to said other diode isolation device on the side thereof opposite said first pixel electrode; (L) forming a second pixel electrode spaced from and substantially parallel to said first pixel electrode; (M) applying light influencing material between said pixel electrode.
Claim 23
Dependent Claim
41 words
A method according to claim 18, further characterized by steps (D), (E) and (F) being performed in succession in a partial vacuum and further characterized by said partial vacuum is continuously maintained during the performance of steps (D), (E) and (F).
Claim 24
Dependent Claim
73 words
A method according to claim 13 or 19, further characterized by said semiconductor layers being deposited by vapor deposition; said vapor deposition being a glow discharge decomposition deposition of at least silanegas (SiH 4 ), with hydrogen gas or fluorine gas being mixed with said silamegas prior to said deposition or of at least silicon tetrafluoride gas.(SiF 4 ) with hydrogen gas being mixed with said SiF 4 gas prior to said deposition.
Claim 25
Dependent Claim
56 words
A method according to claim 18, further characterized by step (I) which includes removing said portions of said semiconductor layers in one continuous process and includes etching or plasma etching and/or by steps (D), (E) and (F) are performed in succession in a partial vacuum, said vacuum being continuously maintained during the performance of said steps.
Claim 26
Dependent Claim
111 words
A method according to claim 22, further characterized by, after step (F), the steps of: (Fl) depositing at least a first additional doped semiconductor layer over said second doped layer, said first additional doped layer being opposite in conductivity with respect to said second doped layer; (F2) depositing at least an additional substantially intrinsic semiconductor layer over said first additional doped layer; (F3) depositing at least a second additional doped semiconductor layer over said additional intrinsic layer, said second additional doped layer being opposite in conductivity with respect to said first additional doped layer; and wherein step (G) includes depositing said second metal layer over said second additional doped semiconductor layer.