Patent JPH06290221A successfully refreshed from Google Patents.
Patent EP0143259A1 successfully refreshed from Google Patents.
EP0143259A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Composite type thyristor
Assignee: Toshiba Corp
•
Filing: 1984-09-27
•
Granted: —
•
Expires: 2004-09-27
Abstract
Abstract There is disclosed a composite type thyristor with a planar structure in which a thyristor (11) and a diode (12) are formed and connected on the same semiconductor substrate (13) such that their current supplying directions are opposite to each other. Between the gate region (14) of the thyristor (11) and the anode region (15) of the diode (12), an isolating region (25) for isolating these gate and anode regions (14, 15) is provided. This isolating region (25) is formed by an impurity diffusion layer (16A).
Inventors
- 👤 Hiroshi C/O Patent Division Sakurai
- 👤 Masami C/O Patent Division Iwasaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 13:26
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/113; H10D62/114; H10D18/00; H10D84/00; H10D84/101; H10D84/131; H10D84/135; H10D84/136
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
74 words
A composite type thyristor with a planar structure in which a thyristor (11) and a diode (12) are formed and connected on the same semiconductor substrate (13) such that their current supplying directions are opposite to each other, characterized in that between a gate region (14) of said thyristor (11) and an anode region (15) of said diode (12), an isolating region (25) for isolating said gate and anode regions (14, 15) is provided.
Claim 2
Dependent Claim
74 words
A composite type thyristor with a planar structure in which a thyristor (11) and a diode (12) are formed and connected on the same semiconductor substrate (13) such that their current supplying directions are opposite to each other, characterized in that between a gate region (14) of said thyristor (11) and an anode region (15) of said diode (12), an isolating region (25) for isolating said gate and anode regions (14, 15) is provided.
Claim 3
Dependent Claim
18 words
A thyristor according to claim 1, characterized in that said isolating region (25) consists of a diffusion layer.
Claim 4
Dependent Claim
22 words
A thyristor according to claim 2, characterized in that said diffusion layer is a guard ring (16A) which was branched and extended.
Claim 5
Dependent Claim
25 words
A thyristor according to claim 1, characterized in that the lifetime killer is selectively diffused in only the region where said diode (12) is formed.
Claim 6
Dependent Claim
32 words
A thyristor according to claim 1, characterized by further comprising a separating region (13A) between an emitter region (17) of said thyristor (11) and the cathode region (19) of said diode (12).
Claim 7
Dependent Claim
21 words
A thyristor according to claim 1, characterized in that the anode (A) of said thyristor (11) has an emitter short-circuited structure.
Claim 8
Dependent Claim
25 words
A thyristor according to claim 1, characterized in that the cathode region (19) of said diode (12) is thinner than said first emitter region (26).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.