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EP0095887A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Apparatus for plasma chemical vapour deposition

Assignee: Fujitsu Ltd
•
Filing: 1983-05-24
•
Granted: —
•
Expires: 2003-05-24
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Abstract

Abstract A plasma CVD apparatus for forming a deposited film onto a base body 3 by introducing a gas of a compound into a chamber 1 and converting the gas into plasma by applying a high frequency electric power, the apparatus comprising gas feeding means 6, 7 leading from the exterior of the chamber 1 into the interior of the chamber 1 and heating means 10,11 for heating at least a part of the gas feeding means inside of the chamber 1, the heating means 10, 11 preventing the gas from condensing or slidifying in the feeding means 6, 7. In this apparatus, plasma CVD can be carried out in a stable fashion using gases of various compounds which are either liquid or solid at room temperature.

Inventors

  • 👤 Yoshimi Shioya
  • 👤 Mikio Takagi
  • 👤 Mamoru Maeda
  • 👤 Yasushi Ohyama

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-09 02:25
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/509; C23C16/5096

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 95 words
A plasma CVD apparatus for forming a deposited film onto a base body (3) by introducing a gas of a compound into a chamber (1) and converting the gas into plasma by applying a high frequency electric power, the apparatus including gas feeding means (6, 7) leading from the exterior of the chamber into the interior of the chamber and heating means (10,11) for heating at least a part of the gas feeding means (6, 7) inside of the chamber (1), thereby preventing the gas from condensing or solidifying in the feeding means (6, 7).
Claim 2
Dependent Claim 95 words
A plasma CVD apparatus for forming a deposited film onto a base body (3) by introducing a gas of a compound into a chamber (1) and converting the gas into plasma by applying a high frequency electric power, the apparatus including gas feeding means (6, 7) leading from the exterior of the chamber into the interior of the chamber and heating means (10,11) for heating at least a part of the gas feeding means (6, 7) inside of the chamber (1), thereby preventing the gas from condensing or solidifying in the feeding means (6, 7).
Claim 3
Dependent Claim 27 words
An apparatus according to claim 1, wherein the feeding means comprises a double-walled cylindrical member (14) and a bottom plate (15) both including internal cavities connected together.
Claim 4
Dependent Claim 22 words
An apparatus according to claim 2, wherein a heating medium is introduced into the cavities of the feeding means to heat them.
Claim 5
Dependent Claim 15 words
An apparatus according to claim 1, wherein the heating means includes an electrical resistance heater.

References Cited (Backward Citations)

US3757733A Cited
US4224897A Cited
US4316430A Cited

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