Patent UST938004I4 successfully refreshed from Google Patents.
UST938004I4
Expired / Lapsed
US
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Field effect transistor gate dielectric
Assignee: —
•
Filing: 1974-08-02
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Granted: 1975-09-02
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Expires: 1994-08-02
Abstract
Abstract A FIELF EFFECT TRANSISTOR GATE DIELECTRIC ON A MONOCRYSTALLINE SILICON BODY THAT HAS EXCELLENT THRESHOLD STABILITY CHARACTERISTICS, AND IMPROVED DIELETRIC INTEGRITY. THE GATE DIELECTRIC IS A COMPOSITE LAYER HAVING A GENETIC SILICON DIOXIDE LAYER FORMED BY THERMALLY OXIDIZING THE BODY, AND A SECOND CONTIGUOUS OVERLYING LAYER VAPOR DEPOSITED SIO2 LEVELS.
Inventors
No inventors recorded.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:01
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10D; H10D99/00
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-09-01 | 1979-03-03 | 1979-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-09-01 | 1983-03-03 | 1983-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-09-01 | 1987-03-03 | 1987-09-02 | $7700.00 | Window Closed / Lapsed |