USRE35785E
Expired / Lapsed
US
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Low-pressure chemical vapor deposition process for depositing high-density highly-conformal, titanium nitride films of low bulk resistivity
Assignee: Micron Technology Inc
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Filing: 1995-09-21
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Granted: 1998-05-05
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Expires: 2015-09-21
Abstract
Abstract A low-pressure chemical vapor deposition process is disclosed for creating high-density, highly-conformal titanium nitride films which have very low bulk resistivity, and which provide excellent step coverage. The process utilizes a metal-organic compound, tetrakis-dialkylamido-titanium Ti(NR2)4, as the primary precursor, in combination with an activated species which attacks the alkyl-nitrogen bonds of the primary precursor, and which will convert the displaced alkyl groups into a volatile compound. Any noble gas, as well as nitrogen or hydrogen, or a mixture of two or more of the foregoing may be used as a carrier for the precursor. The activated species, which may include a halogen, NH3, or hydrogen radicals, or a combination thereof, are generated in the absence of the primary precursor, at a location remote from the deposition chamber. The wafer is heated to a temperature within a range of 200 DEG -600 DEG C. The primary precursor molecules and the activated species are mixed, preferably, just prior to being ducted into the deposition chamber. Relatively uncontaminated titanium nitride deposits on the heated wafer surface.
Inventors
- 👤 Gurtej S. Sandhu
- 👤 Todd W. Buley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:07
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/44; C23C16/448; C23C16/4481; C23C16/4482; C23C16/452
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
84 words
A chemical vapor deposition process for depositing a titanium nitride film on a substrate, said process comprising the steps of: (1) disposing the substrate on a heated susceptor plate within a chemical vapor deposition chamber; (2) admitting a mixture of vaporized tetrakis-dialkylamido-titanium as the primary precursor compound and an activated species into said chamber, said activated species having been created in a plasma discharge at a location remote from the chamber, and said primary precursor compound having not been subjected to a plasma discharge.
Claim 2
Dependent Claim
84 words
A chemical vapor deposition process for depositing a titanium nitride film on a substrate, said process comprising the steps of: (1) disposing the substrate on a heated susceptor plate within a chemical vapor deposition chamber; (2) admitting a mixture of vaporized tetrakis-dialkylamido-titanium as the primary precursor compound and an activated species into said chamber, said activated species having been created in a plasma discharge at a location remote from the chamber, and said primary precursor compound having not been subjected to a plasma discharge.
Claim 3
Dependent Claim
11 words
The process of claim 1, wherein said precursor compound is tetrakis-dimethylamido-titanium.
Claim 4
Dependent Claim
29 words
The process of claim 1, wherein said activated species reacts with the alkyl-nitrogen bonds of the primary precursor compound, and forms a volatile compound with the alkyl groups thereof.
Claim 5
Dependent Claim
39 words
The process of claim 3, wherein said substrate is heated by said susceptor plate to a temperature sufficient to cause remnants of said vaporized precursor compound to deposit on said substrate in the form of a titanium nitride film.
Claim 6
Dependent Claim
19 words
The process of claim 4, wherein said substrate is heated to a temperature within a range of 200°-600° C.
Claim 7
Dependent Claim
17 words
The process of claim 5, wherein said substrate is heated to a temperature of about 400° C.
Claim 8
Dependent Claim
17 words
The process of claim 3, wherein reaction products are removed from the chamber as the reaction proceeds.
Claim 9
Dependent Claim
25 words
The process of claim 3, wherein the walls of said chamber are maintained at a temperature that is insufficient to pyrolyze the primary precursor compound.
Claim 10
Dependent Claim
13 words
The process of claim 1, wherein said activated species is a halogen radical.
Claim 11
Dependent Claim
13 words
The process of claim 9, wherein said activated species is a chlorine radical.
Claim 12
Dependent Claim
13 words
The process of claim 9, wherein said activated species is a fluorine radical.
Claim 13
Dependent Claim
13 words
The process of claim 1, wherein said activated species is a hydrogen radical.
Claim 14
Dependent Claim
14 words
The process of claim 1, wherein said activated species is an NF 3 radical.
Claim 15
Dependent Claim
14 words
The process of claim 1, wherein said activated species is a NH 3 radical.
Claim 16
Dependent Claim
24 words
The process of claim 1, wherein said at least one carrier gas is utilized to transport the vaporized primary precursor compound into the chamber.
Claim 17
Dependent Claim
22 words
The process of claim 15, wherein said carrier gas is selected from a group consisting of the noble gases, nitrogen and hydrogen.
Claim 18
Dependent Claim
19 words
The process of claim 16, wherein said precursor compound is introduced into said carrier gas in a bubbler apparatus.
Claim 19
Dependent Claim
103 words
A chemical vapor deposition process for depositing a titanium nitride film on a semiconductor wafer comprising the steps of: (1) disposing the semiconductor wafer on a heated susceptor plate within a chemical vapor deposition chamber; (2) admitting at least one inert carrier gas into said chamber, said carrier gas being at least partially saturated with a metal-organic titanium compound as the primary precursor compound; and (3) admitting an activated species into said chamber, said activated species having been created in a plasma discharge at a location remote from the chamber, and said primary precursor compound having not been subjected to a plasma discharge.
Claim 20
Dependent Claim
103 words
A chemical vapor deposition process for depositing a titanium nitride film on a semiconductor wafer comprising the steps of: (1) disposing the semiconductor wafer on a heated susceptor plate within a chemical vapor deposition chamber; (2) admitting at least one inert carrier gas into said chamber, said carrier gas being at least partially saturated with a metal-organic titanium compound as the primary precursor compound; and (3) admitting an activated species into said chamber, said activated species having been created in a plasma discharge at a location remote from the chamber, and said primary precursor compound having not been subjected to a plasma discharge.
Claim 21
Dependent Claim
12 words
The process of claim 18, wherein said primary precursor compound is tetrakis-dialkylamido-titanium.
Claim 22
Dependent Claim
29 words
The process of claim 19, wherein said activated species reacts with the alkyl-nitrogen bonds of the primary precursor compound, and forms a volatile compound with the alkyl groups thereof.
Claim 23
Dependent Claim
35 words
The process of claim 18, wherein said semiconductor wafer is heated by said susceptor plate to a temperature sufficient to cause remnants of said primary precursor compound to deposit on the surface of the wafer.
Claim 24
Dependent Claim
26 words
The process of claim 18, wherein said at least one carrier gas is selected from a group consisting of the noble gases, nitrogen and hydrogen. .Iadd.
Claim 25
Dependent Claim
198 words
A chemical vapor deposition process for depositing a titanium nitride film on a semiconductor wafer comprising the steps of: disposing the semiconductor wafer on a heated susceptor plate within a chemical vapor deposition chamber; admitting into said chamber a metal-organic titanium compound as the primary precursor compound; and admitting an activated species into said chamber, said activated species having been created in a plasma discharge at a location remote from the chamber, and said primary precursor compound having not been subjected to a plasma discharge..Iaddend..Iadd.24. The process of claim 23, wherein said primary precursor compound is tetrakis-dialkylamido-titanium..Iaddend..Iadd.25. The process of claim 24, wherein said activated species reacts with the alkyl-nitrogen bonds of the primary precursor compound, and forms a volatile compound with the alkyl groups thereof..Iaddend..Iadd.26. The process of claim 23, wherein said semiconductor wafer is heated by said susceptor plate to a temperature sufficient to cause remnants of said primary precursor compound to deposit on the surface of the wafer..Iaddend..Iadd.27. The process of claim 23, wherein a carrier gas is also admitted into the chamber..Iaddend..Iadd.28. The process of claim 27, wherein said carrier gas is selected from a group consisting of the noble gases, nitrogen and hydrogen..Iaddend.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-04 | 2001-11-03 | 2002-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-04 | 2005-11-03 | 2006-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-04 | 2009-11-03 | 2010-05-05 | $7700.00 | Window Closed / Lapsed |