Patent USRE28635E successfully refreshed from Google Patents.
USRE28635E
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pyropolymeric semiconducting organic-refractory oxide material
Assignee: —
•
Filing: 1973-08-16
•
Granted: 1975-12-02
•
Expires: 1993-08-16
Abstract
Abstract A semiconducting material comprising a carbonaceous pyropolymer formed on a refractory oxide having a surface area of from 1 to 500 square meters per gram. A refractory oxide is heated to at least about 400* C. in an atmosphere containing an organic pyrolyzable substance. The semiconducting material has a conductivity at room temperature of at least (from about) 10 8 (to about 100) inverse ohm-centimeters and within the semiconducting range, and is used for electrical applications such as heterojunction transistors, field-effect transistors, thermoelements in thermoelectric generators and refrigerators and temperature-sensing devices, (and electrodes in electrochemical cells,) charge and energy storage devices, memory devices, inductive elements, and a variety of other electrical applications.
Inventors
No inventors recorded.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 19:25
CPC Classifications
H; H10; H10N; H10N10/00; H10N10/80; H10N10/85; H10N10/851; H10N10/855; H01; H01B; H01B1/00; H10D; H10D99/00; H10K; H10K85/00; H10N10/8556; Y; Y10; Y10T; Y10T428/00; Y10T428/31
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
16 words
The semiconducting material of claim (1) 18 further characterized in that said refractory oxide is alumina.
Claim 2
Dependent Claim
15 words
The semiconducting material of claim 2 further characterized in that said refractory oxide is gamma-alumina.
Claim 3
Dependent Claim
16 words
The semiconducting material of claim (1) 18 further characterized in that said refractory oxide is silica-alumina.
Claim 4
Dependent Claim
19 words
The semiconducting material of claim (1) 18 further characterized in that said refractory oxide is preimpregnated with a metal.
Claim 5
Dependent Claim
14 words
The semiconducting material of claim 5 further characterized in that said metal is platinum.
Claim 6
Dependent Claim
20 words
The semiconducting material of claim 5 further characterized in that said refractory oxide is preimpregnated with a plurality of metals.
Claim 7
Dependent Claim
13 words
THE SEMICONDUCTING MATERIAL OF CLAIM 7 WHEREIN SAID METALS ARE PLATINUM AND RHENIUM.
Claim 8
Dependent Claim
13 words
The semiconducting material of claim 7 wherein said metals are platinum and germanium.
Claim 9
Dependent Claim
13 words
The semiconducting material of claim 7 wherein said metals are platinum and tin.
Claim 10
Dependent Claim
13 words
The semiconducting material of claim 7 wherein said metals are platinum and lead.
Claim 11
Dependent Claim
14 words
The semiconducting material of claim 7 wherein said metals are platinum, nickel, and rhenium.
Claim 12
Dependent Claim
20 words
The semiconducting material of claim (1) 18 further characterized in that said refractory oxide is preimpregnated with an inorganic salt.
Claim 13
Dependent Claim
13 words
The semiconducting material of claim 13 wherein said inorganic salt is sodium chloride.
Claim 14
Dependent Claim
23 words
The semiconducting material of claim (1) 18 further characterized in that said refractory oxide is powdered and copressed with an inorganic dry lubricant.
Claim 15
Dependent Claim
14 words
The semiconducting material of claim 15 wherein said inorganic dry lubricant is molybdenum disulfide.
Claim 16
Dependent Claim
14 words
The semiconducting material of claim 16 wherein said inorganic dry lubricant is antimony oxide.
Claim 17
Dependent Claim
68 words
In a semiconducting device, a high surface area semiconducting material comprising a catalytically active high surface area refractory oxide having a surface area of from 1 to about 500 square meters per gram and a carbonaceous pyropolymer forming at least a monolayer on said refractory oxide, said semi-conducting material having a conductivity at room temperature of from about 10 5 inverse ohm centimeters to 100 inverse ohm centimeters.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-12-01 | 1979-06-02 | 1979-12-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-12-01 | 1983-06-02 | 1983-12-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-12-01 | 1987-06-02 | 1987-12-02 | $7700.00 | Window Closed / Lapsed |