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USH695H
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High energy optically controlled kilovolt semiconductor switch
Assignee: United States Department of the Army
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Filing: 1987-10-23
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Granted: 1989-10-03
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Expires: 2007-10-23
Abstract
Abstract A high energy, optically controlled kilovolt semiconductor switch is provd including a bulk piece of high resistivity semiconductor for illumination by a high speed laser, said semiconductor having a thick highly doped epitaxial layer of P+ impurity grown on one side of the semiconductor, and a thick highly doped epitaxial layer of N+ impurity grown on the opposite side of the semiconductor with metallic electrodes deposited on the respective epitaxial layers using standard ohmic contact procedures.
Inventors
- 👤 Maurice Weiner
- 👤 Lawrence J. Bovino
- 👤 Terence Burke
- 👤 Anderson H. Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 20:19
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/103
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
69 words
A high energy, optically controlled kilovolt semiconductor switch comprising a bulk piece of high resistivity semiconductor for illumination by a high speed laser, said semiconductor having a thick highly doped epitaxial layer of P+ impurity grown on one side of the semiconductor, and a thick highly doped epitaxial layer of N+ impurity grown on the opposite side of the semiconductor with metallic electrodes deposited on the respective epitaxial layers.
Claim 2
Dependent Claim
69 words
A high energy, optically controlled kilovolt semiconductor switch comprising a bulk piece of high resistivity semiconductor for illumination by a high speed laser, said semiconductor having a thick highly doped epitaxial layer of P+ impurity grown on one side of the semiconductor, and a thick highly doped epitaxial layer of N+ impurity grown on the opposite side of the semiconductor with metallic electrodes deposited on the respective epitaxial layers.
Claim 3
Dependent Claim
22 words
A high energy optically controlled kilovolt semiconductor switch according to claim 1 wherein the epitaxial layers are grown by vapor deposition techniques.
Claim 4
Dependent Claim
22 words
A high energy optically controlled kilovolt semiconductor switch according to claim 1 wherein the epitaxial layers are grown by liquid deposition techniques.
Claim 5
Dependent Claim
25 words
A high energy optically controlled kilovolt semiconductor switch according to claim 2 wherein each epitaxial layer has a thickness of about 10 to 100 microns.
Claim 6
Dependent Claim
25 words
A high energy optically controlled kilovolt semiconductor switch according to claim 3 wherein each epitaxial layer has a thickness of about 10 to 100 microns.
Claim 7
Dependent Claim
27 words
A high energy optically controlled kilovolt semiconductor switch according to claim 4 wherein the doping densities range from about 10 14 to 10 17 cm -3 .
Claim 8
Dependent Claim
27 words
A high energy optically controlled kilovolt semiconductor switch according to claim 5 wherein the doping densities range from about 10 14 to 10 17 cm -3 .
Claim 9
Dependent Claim
18 words
A high energy optically controlled kilovolt semiconductor switch according to claim 1 wherein the semiconductor is gallium arsenide.
Claim 10
Dependent Claim
25 words
A high energy optically controlled kilovolt semiconductor switch according to claim 1 wherein the laser light enters perpendicular to the current flow in the semiconductor.
Claim 11
Dependent Claim
29 words
A high energy optically controlled kilovolt semiconductor switch according to claim 1 wherein one of the electrodes is gridded and the light enters the semiconductor through the grid apertures.
Claim 12
Dependent Claim
131 words
A high energy optically controlled kilovolt semiconductor switch for illumination by a high speed laser comprising a bulk piece of high resistivity gallium arsenide having a thick highly doped epitaxial layer of P+ impurity grown on one side of the gallium arsenide, and a thick highly doped epitaxial layer of N+ impurity grown on the opposite side of the gallium arsenide, wherein each of the epitaxial layers are grown by vapor deposition techniques and wherein each of the epitaxial layers has a thickness of about 10 to 100 microns and wherein the doping densities range from about 10 14 to 10 17 cm -3 with metallic electrodes deposited on the respective epitaxial layers and wherein one of the electrodes is gridded and the light enters the semiconductor through the grid apertures.
Claim 13
Dependent Claim
131 words
A high energy optically controlled kilovolt semiconductor switch for illumination by a high speed laser comprising a bulk piece of high resistivity gallium arsenide having a thick highly doped epitaxial layer of P+ impurity grown on one side of the gallium arsenide, and a thick highly doped epitaxial layer of N+ impurity grown on the opposite side of the gallium arsenide, wherein each of the epitaxial layers are grown by vapor deposition techniques and wherein each of the epitaxial layers has a thickness of about 10 to 100 microns and wherein the doping densities range from about 10 14 to 10 17 cm -3 with metallic electrodes deposited on the respective epitaxial layers and wherein one of the electrodes is gridded and the light enters the semiconductor through the grid apertures.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-02 | 1993-04-03 | 1993-10-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-02 | 1997-04-03 | 1997-10-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-02 | 2001-04-03 | 2001-10-03 | $7700.00 | Window Closed / Lapsed |