USH274H
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing an integrated circuit chip and integrated circuit chip produced thereby
Assignee: Analog Devices Inc
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Filing: 1985-05-28
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Granted: 1987-05-05
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Expires: 2005-05-28
Abstract
Abstract A method of manufacturing an integrated circuit chip utilizing a two-step process for converting an ordinary photoresist material to a useful dielectric. This is done by exposing the photoresist to an xenon flash lamp and then baking it at a high temperature. The converted photoresist is used as a permanent dielectric layer in the integrated chip.
Inventors
- 👤 Paul Ruggerio
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P14/65; H10P14/6516; H10P14/6536; H10P14/6538; H10P14/69; H10P14/6903; H10P95/00; H10P95/08
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
103 words
A method of manufacturing an integrated circuit chip starting from an insulation layer having a first level of metallic contacts thereon comprising the steps of: (a) applying a layer of photoresist to cover the metallic contacts and the insulation layer underneath; (b) masking and exposing the photoresist, to define the vias; (c) developing the photoresist to form vias; (d) after developing the photoresist, converting the developed photoresist into a permanent dielectric, said step of converting including the steps of temperature stabilizing the photoresist followed by heat treating the photoresist to remove volatile components therefrom; and (e) forming a second level of metallic contacts.
Claim 2
Independent Claim
103 words
A method of manufacturing an integrated circuit chip starting from an insulation layer having a first level of metallic contacts thereon comprising the steps of: (a) applying a layer of photoresist to cover the metallic contacts and the insulation layer underneath; (b) masking and exposing the photoresist, to define the vias; (c) developing the photoresist to form vias; (d) after developing the photoresist, converting the developed photoresist into a permanent dielectric, said step of converting including the steps of temperature stabilizing the photoresist followed by heat treating the photoresist to remove volatile components therefrom; and (e) forming a second level of metallic contacts.
Claim 3
Dependent Claim
41 words
The method of claim 1 wherein the step of forming a second level of metallic contacts includes the step of connecting the second level of metallic contacts with the first level of metallic contacts through the vias in the converted photoresist.
Claim 4
Dependent Claim
48 words
The method of claim 1 in which the step of converting the photoresist into permanent dielectric further comprises the steps of: (a) exposing the photoresist to a xenon flash lamp; and (b) baking the photoresist at a temperature and for a time sufficient to remove volatile components therefrom.
Claim 5
Dependent Claim
41 words
The method of claim 3 wherein the step of forming a second level of metallic contacts includes the step of connecting the second level of metallic contacts with the first level of metallic contacts through the vias in the converted photoresist.
Claim 6
Dependent Claim
112 words
An integrated circuit chip manufactured on a substrate covered by an insulation layer with a first level of metallic contacts deposited thereon, said chip having been manufactured by a process comprising the steps of: (a) applying a layer of photoresist to cover the metallic contacts and the insulation layer underneath; (b) masking and exposing the photoresist to define the vias; (c) developing the photoresist to form vias; (d) after developing the photoresist, converting the developed photoresist into a permanent dielectric, said step of converting including the steps of temperature stabilizing the photoresist followed by heat treating the photoresist to remove volatile components therefrom; and (e) forming a second level of metallic contacts.
Claim 7
Dependent Claim
112 words
An integrated circuit chip manufactured on a substrate covered by an insulation layer with a first level of metallic contacts deposited thereon, said chip having been manufactured by a process comprising the steps of: (a) applying a layer of photoresist to cover the metallic contacts and the insulation layer underneath; (b) masking and exposing the photoresist to define the vias; (c) developing the photoresist to form vias; (d) after developing the photoresist, converting the developed photoresist into a permanent dielectric, said step of converting including the steps of temperature stabilizing the photoresist followed by heat treating the photoresist to remove volatile components therefrom; and (e) forming a second level of metallic contacts.
Claim 8
Dependent Claim
56 words
An integrated circuit chip as defined in claim 5, wherein in the manufacturing process the step of converting the developed photoresist into permanent dielectric further comprises the steps of: (a) exposing the photoresist to a xenon flash lamp; and (b) baking the photoresist at a temperature and for a time sufficient to remove volatile components therefrom.
Claim 9
Independent Claim
101 words
A method for forming a patterned insulating layer on a semiconductor device comprising the steps of: applying a layer of photoresist material over the surface of the semiconductor device; masking and exposing the photoresist material to define a pattern thereon; developing the photoresist material to remove undesired portions and form said pattern; after developing the photoresist material, temperature stabilizing the patterned photoresist material by exposure to a xenon flash lamp; and after exposure to a xenon flash lamp, baking the patterned photoresist material at a temperature and for a time sufficient to remove volatile components therefrom and form a permanent dielectric.
Claim 10
Independent Claim
101 words
A method for forming a patterned insulating layer on a semiconductor device comprising the steps of: applying a layer of photoresist material over the surface of the semiconductor device; masking and exposing the photoresist material to define a pattern thereon; developing the photoresist material to remove undesired portions and form said pattern; after developing the photoresist material, temperature stabilizing the patterned photoresist material by exposure to a xenon flash lamp; and after exposure to a xenon flash lamp, baking the patterned photoresist material at a temperature and for a time sufficient to remove volatile components therefrom and form a permanent dielectric.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-05-04 | 1990-11-03 | 1991-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-05-04 | 1994-11-03 | 1995-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-05-04 | 1998-11-03 | 1999-05-05 | $7700.00 | Window Closed / Lapsed |