US4328262A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor devices having photoresist film as a permanent layer
Assignee: Fujitsu Ltd
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Filing: 1980-07-28
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Granted: 1982-05-04
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Expires: 2000-07-28
Abstract
Abstract A layer of aluminum on a semiconductor substrate is covered by a layer of phospho-silicate glass. The surface of the semiconductor chip is covered with a positive photoresist film which is then heat treated. An upper surface of the photoresist film is covered with a polyimide resin which is heat treated, thereafter. If the semiconductor device is devoid of the layer of phospho-silicate glass, and the layer of aluminum is exposed, a positive photoresist film is interposed on the aluminum and the polyimide resin is applied to cover the upper surface of the interlayer, and is heat treated.
Inventors
- 👤 Toshio Kurahashi
- 👤 Kazuo Tokitomo
- 👤 Toshihiko Ono
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 17:55
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P14/63; H10P14/6326; H10P14/6342; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P76/00; H10P76/20; H10P76/202; H10W; H10W42/00; H10W42/20; H10W42/25; H10W74/00; H10W74/10; H10W74/131; H10W74/147; H10W74/40; H10W74/47; H10W74/476
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
96 words
A method of manufacturing a semiconductor device having a semiconductor substrate, said method comprising the steps of forming an insulator layer of a material from a group consisting of phospho-silicate glass and silicon oxide on the substrate; covering a surface of the insulator layer with a photoresist film; carrying out a first heat treatment of said substrate to harden the photoresist film; covering an upper surface of the hardened photoresist film with a thermosetting resin film; and carrying out a second heat treatment at a temperature higher than 300° C. to cure the thermosetting resin film.
Claim 2
Independent Claim
96 words
A method of manufacturing a semiconductor device having a semiconductor substrate, said method comprising the steps of forming an insulator layer of a material from a group consisting of phospho-silicate glass and silicon oxide on the substrate; covering a surface of the insulator layer with a photoresist film; carrying out a first heat treatment of said substrate to harden the photoresist film; covering an upper surface of the hardened photoresist film with a thermosetting resin film; and carrying out a second heat treatment at a temperature higher than 300° C. to cure the thermosetting resin film.
Claim 3
Dependent Claim
17 words
A method as claimed in claim 1, wherein said photoresist film consists of a positive photoresist compound.
Claim 4
Dependent Claim
17 words
A method as claimed in claim 1, wherein said thermosetting resin film consists of a polyimide compound.
Claim 5
Independent Claim
93 words
A method of manufacturing a semiconductor device having a semiconductor substrate and a wiring layer of aluminum on the substrate, said method comprising the steps of forming a photoresist film on the substrate to cover the wiring layer; carrying out a first heat treatment of said substrate to harden the photoresist film; forming a thermosetting resin film on said substrate to cover said photoresist film; partially removing the thermosetting resin film to form an opening at the aluminum wiring layer; and carrying out a second heat treatment to cure said thermosetting resin film.
Claim 6
Independent Claim
93 words
A method of manufacturing a semiconductor device having a semiconductor substrate and a wiring layer of aluminum on the substrate, said method comprising the steps of forming a photoresist film on the substrate to cover the wiring layer; carrying out a first heat treatment of said substrate to harden the photoresist film; forming a thermosetting resin film on said substrate to cover said photoresist film; partially removing the thermosetting resin film to form an opening at the aluminum wiring layer; and carrying out a second heat treatment to cure said thermosetting resin film.
Claim 7
Dependent Claim
22 words
A method as claimed in claim 4, wherein the second heat treatment is carried out at a temperature higher than 300° C.
Claim 8
Dependent Claim
17 words
A method as claimed in claim 4, wherein said photoresist film consists of a positive photoresist compound.
Claim 9
Dependent Claim
18 words
A method as claimed in claim 4, wherein said thermosetting resin film consists of a polyimide resin compound.
Claim 10
Independent Claim
143 words
A method of manufacturing a semiconductor device having a semiconductor substrate and a wiring layer formed on the substrate, said method comprising the steps of forming an insulator layer on the substrate to cover the wiring layer; forming a photoresist film on said substrate to cover the insulator layer; carrying out a first heat treatment of said substrate to harden the photoresist film; forming an opening in said photoresist film at a part of the wiring layer; etching of said insulator layer to form an opening at the wiring layer; forming a thermosetting resin film on said substrate to cover said photoresist film; partially removing the thermosetting resin film to form an opening at the wiring layer; and carrying out a second heat treatment to cure said thermosetting resin film whereby said thermosetting resin film serves as a protective film of the device.
Claim 11
Independent Claim
143 words
A method of manufacturing a semiconductor device having a semiconductor substrate and a wiring layer formed on the substrate, said method comprising the steps of forming an insulator layer on the substrate to cover the wiring layer; forming a photoresist film on said substrate to cover the insulator layer; carrying out a first heat treatment of said substrate to harden the photoresist film; forming an opening in said photoresist film at a part of the wiring layer; etching of said insulator layer to form an opening at the wiring layer; forming a thermosetting resin film on said substrate to cover said photoresist film; partially removing the thermosetting resin film to form an opening at the wiring layer; and carrying out a second heat treatment to cure said thermosetting resin film whereby said thermosetting resin film serves as a protective film of the device.
Claim 12
Dependent Claim
15 words
A method as claimed in claim 8, wherein said insulator film consists of phospho-silicate glass.
Claim 13
Dependent Claim
22 words
A method as claimed in claim 8, wherein the second heat treatment is carried out at a temperature higher than 300° C.
Claim 14
Dependent Claim
17 words
A method as claimed in claim 8, wherein said photoresist film consists of a positive photoresist compound.
Claim 15
Dependent Claim
17 words
A method as claimed in claim 8, wherein said thermosetting resin consists of a polyimide resin compound.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-05-03 | 1985-11-02 | 1986-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-05-03 | 1989-11-02 | 1990-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-05-03 | 1993-11-02 | 1994-05-04 | $7700.00 | Window Closed / Lapsed |