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Method of reducing the surface leakage on a III-V semiconductor
Assignee: United States Department of the Army
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Filing: 1991-04-15
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Granted: 1992-04-07
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Expires: 2011-04-15
Abstract
Abstract The surface leakage on a III-V semiconductor is reduced by selectively grng a mixed oxide on the surface of the semiconductor to passivate the semiconductor and reduce the surface leakage.
Inventors
- 👤 Robert A. Lux
- 👤 Ravi Khanna
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 20:29
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6312; H10P14/68
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
31 words
Method of reducing the surface leakage on a III-V semiconductor comprising selectively growing a mixed oxide on the surface of the semiconductor to passivate the semiconductor and reduce the surface leakage.
Claim 2
Dependent Claim
31 words
Method of reducing the surface leakage on a III-V semiconductor comprising selectively growing a mixed oxide on the surface of the semiconductor to passivate the semiconductor and reduce the surface leakage.
Claim 3
Dependent Claim
13 words
Method according to claim 1 wherein the III-V semiconductor is a GaAs semiconductor.
Claim 4
Dependent Claim
40 words
Method of reducing the gate leakage and increasing the breakdown voltage of a GaAs field effect transistor (FET) comprising forming a mixed oxide by photo oxidation in water to passivate the surface of the GaAs and reduce the surface leakage.
Claim 5
Dependent Claim
40 words
Method of reducing the gate leakage and increasing the breakdown voltage of a GaAs field effect transistor (FET) comprising forming a mixed oxide by photo oxidation in water to passivate the surface of the GaAs and reduce the surface leakage.
Claim 6
Dependent Claim
37 words
Method according to claim 3 wherein the water is a pH neutral water in which arsenic oxide selectively dissolves leaving a gallium oxide Ga 2 O 3 that passivates the GaAs surface and reduces the surface leakage.
Claim 7
Dependent Claim
51 words
Method of reducing the gate leakage and increasing the breakdown voltage of a GaAs FET comprising immersing the FET in a container of deionized water and illuminating with a lamp and then removing the FET when sufficient oxide had grown to effect the desired improvement of gate leakage and breakdown voltage.
Claim 8
Dependent Claim
51 words
Method of reducing the gate leakage and increasing the breakdown voltage of a GaAs FET comprising immersing the FET in a container of deionized water and illuminating with a lamp and then removing the FET when sufficient oxide had grown to effect the desired improvement of gate leakage and breakdown voltage.
Claim 9
Dependent Claim
15 words
Method according to claim 5 wherein the method requires less than 30 minutes to complete.
References Cited (Backward Citations)
FR2529384B1
Cited
US5021365A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-04-07 | 1995-10-07 | 1996-04-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-07 | 1999-10-07 | 2000-04-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-07 | 2003-10-07 | 2004-04-07 | $7700.00 | Window Closed / Lapsed |