Patent US9136403B2 successfully refreshed from Google Patents.
US9136403B2
Active / In Force
US
⏱️ 6.4 years remaining
Semiconductor device with wirings of differing young's modulus and method for fabricating the same
Assignee: Canon Inc
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Filing: 2013-03-14
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Granted: 2015-09-15
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Expires: 2033-03-14
Abstract
Abstract In a semiconductor device including unit cells which are aligned in one direction, wirings disposed along end portions in the one direction have high Young's moduli.
Inventors
- 👤 Masanori Ogura
- 👤 Hideo Kobayashi
- 👤 Tetsunobu Kochi
- 👤 Masashi Kitani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 10:11
CPC Classifications
H01L31/02002; H; H10; H10F; H10F99/00; H10F77/00; H10F77/93; H01L23/53271; H01L27/14603; H01L27/14636; H10F39/00; H10F39/80; H10F39/802; H10F39/811; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; H10W20/4403; H10W20/4405; H10W20/4421; H10W20/4424
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
99 words
A semiconductor device comprising: a plurality of unit cells aligned in a first direction and including one unit cell disposed closest to one side of the semiconductor device among the plurality of the unit cells, the one side extending in a second direction which intersects with the first direction; a first wiring electrically connected to the plurality of the unit cells; and a second wiring electrically connected to the first wiring and disposed between the one side and the one unit cell, wherein the second wiring has a Young's modulus higher than a Young's modulus of the first wiring.
Claim 2
Dependent Claim
99 words
A semiconductor device comprising: a plurality of unit cells aligned in a first direction and including one unit cell disposed closest to one side of the semiconductor device among the plurality of the unit cells, the one side extending in a second direction which intersects with the first direction; a first wiring electrically connected to the plurality of the unit cells; and a second wiring electrically connected to the first wiring and disposed between the one side and the one unit cell, wherein the second wiring has a Young's modulus higher than a Young's modulus of the first wiring.
Claim 3
Dependent Claim
40 words
The semiconductor device according to claim 1 , wherein the unit cells are aligned in the first direction with a pitch of d, and wherein a distance between the one side and the one unit cell is d/2 or less.
Claim 4
Dependent Claim
26 words
The semiconductor device according to claim 1 , wherein a melting point of the second wiring is higher than a melting point of the first wiring.
Claim 5
Dependent Claim
19 words
The semiconductor device according to claim 1 , wherein the second wiring is disposed directly on a field oxide.
Claim 6
Dependent Claim
46 words
The semiconductor device according to claim 1 , wherein a main material of the first wiring is selected from the group consisting of aluminum, copper, and an alloy of aluminum and copper, and wherein a main material of the second wiring is polysilicon or silicided polysilicon.
Claim 7
Dependent Claim
109 words
A semiconductor device comprising: a plurality of unit cells aligned in a first direction and including one unit cell disposed closest to one side of the semiconductor device among the plurality of the unit cells, the one side extending in a second direction which intersects with the first direction; a first wiring; and a second wiring electrically connected to the first wiring and disposed between the one side and the one unit cell, wherein the second wiring has a Young's modulus higher than a Young's modulus of the first wiring, and wherein a cross-sectional area of the second wiring is larger than a cross-sectional area of the first wiring.
Claim 8
Dependent Claim
109 words
A semiconductor device comprising: a plurality of unit cells aligned in a first direction and including one unit cell disposed closest to one side of the semiconductor device among the plurality of the unit cells, the one side extending in a second direction which intersects with the first direction; a first wiring; and a second wiring electrically connected to the first wiring and disposed between the one side and the one unit cell, wherein the second wiring has a Young's modulus higher than a Young's modulus of the first wiring, and wherein a cross-sectional area of the second wiring is larger than a cross-sectional area of the first wiring.
Claim 9
Dependent Claim
28 words
The semiconductor device according to claim 1 , wherein the second wiring transmits a bias voltage or a control signal used to control operations of the unit cells.
Claim 10
Dependent Claim
66 words
A semiconductor device including a plurality of unit cells aligned in one direction and a wiring group, the wiring group comprising: a first wiring; and a second wiring having a Young's modulus higher than a Young's modulus of the first wiring and disposed along an end portion in the one direction of the semiconductor device, wherein each of the unit cells includes a photoelectric conversion element.
Claim 11
Dependent Claim
66 words
A semiconductor device including a plurality of unit cells aligned in one direction and a wiring group, the wiring group comprising: a first wiring; and a second wiring having a Young's modulus higher than a Young's modulus of the first wiring and disposed along an end portion in the one direction of the semiconductor device, wherein each of the unit cells includes a photoelectric conversion element.
Claim 12
Dependent Claim
41 words
An image sensor unit including a plurality of the semiconductor devices set forth in claim 1 , wherein each of the unit cells includes a photoelectric conversion element, and wherein the plurality of semiconductor devices are aligned in the one-first direction.
Claim 13
Dependent Claim
16 words
An image reading apparatus device including the image sensor unit set forth in claim 9 .
Claim 14
Dependent Claim
62 words
The semiconductor device according to claim 1 , wherein the first wiring is included in a first wiring group of a plurality of wirings, each of which is mainly constituted by a first material, and wherein the second wiring is included in a second wiring group of a plurality of wirings mainly constituted by a second material other than the first material.
Claim 15
Dependent Claim
53 words
The semiconductor device according to claim 11 , wherein a cross-sectional area of the second wiring is larger than a cross-sectional area of another wiring of the second wiring group, and wherein the second wiring transmits a signal having at least one of a larger amplitude and larger frequency than the another wiring.
Claim 16
Dependent Claim
24 words
The semiconductor device according to claim 11 , wherein the second wiring is disposed in parallel to another wiring of the second wiring group.
Claim 17
Dependent Claim
26 words
The semiconductor device according to claim 1 , wherein the first wiring extends in the first direction, and the second wiring extends in the second direction.
Claim 18
Dependent Claim
29 words
The semiconductor device according to claim 1 , wherein another side of the semiconductor device is longer than the one side, the another side extending in the first direction.
Claim 19
Dependent Claim
44 words
The semiconductor device according to claim 14 , wherein the first wiring is disposed in a layer different from a layer in which the second wiring is disposed, and the first wiring and the second wiring are connected to each other through a plug.
Claim 20
Dependent Claim
40 words
An apparatus including a plurality of the semiconductor devices set forth in claim 1 , wherein the unit cells includes a discharge port for discharging liquid droplets, and wherein the plurality of semiconductor devices are aligned in the first direction.
Claim 21
Dependent Claim
33 words
The semiconductor device according to claim 1 , wherein a distance from the one side to the second wiring is smaller than a distance from the one side to the one unit cell.
Claim 22
Dependent Claim
32 words
The semiconductor device according to claim 1 , wherein a distance from the one side to the second wiring is smaller than a distance from the one side to the first wiring.
Claim 23
Dependent Claim
33 words
A method for fabricating the semiconductor device according to claim 1 , the method comprising: forming the first and second wirings on a semiconductor substrate; and cutting the semiconductor substrate by laser dicing.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2018-09-14 | 2019-03-16 | 2019-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2022-09-14 | 2023-03-16 | 2023-09-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2026-09-14 | 2027-03-16 | 2027-09-15 | $7700.00 | Open for Payment |