US8779569B2
Active / In Force
US
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Semiconductor device and method for manufacturing the same
Assignee: Rohm Co Ltd
•
Filing: 2011-01-17
•
Granted: 2014-07-15
•
Expires: 2031-01-17
Abstract
Abstract A semiconductor device 100 includes a first insulating material 110 attached to a second main surface 106 b of a semiconductor chip 106 , and a second insulating material 112 attached to side surfaces of the semiconductor chip 106 , the first insulating material 110 and an island 102 . The semiconductor chip 106 is fixed to the island 102 via the first insulating material 110 and the second insulating material 112 . The first insulating material 110 ensures a high dielectric strength between the semiconductor chip 106 and the island 102 . Though the second insulating material 112 having a modulus of elasticity greater than that of the first insulating material 110 , the semiconductor chip 106 is firmly attached to the island 102.
Inventors
- 👤 Akihiro Kimura
- 👤 Tsunemori Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 10:12
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/411; H10W70/417; H10W70/421; H10W70/424; H10W70/427; H10W74/00; H10W74/10; H10W74/111; H10W72/00; H10W72/50; H10W72/541; H10W72/5449; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/5525; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/931; H10W74/121; H10W76/00; H10W76/10; H10W76/17; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
137 words
A semiconductor device comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, the first insulating material is provided on the island, and the second insulating material is held in contact with and fixed to: the second main surface; side surfaces connected to both the first main surface and the second main surface; the first insulating material; and the island.
Claim 2
Dependent Claim
137 words
A semiconductor device comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, the first insulating material is provided on the island, and the second insulating material is held in contact with and fixed to: the second main surface; side surfaces connected to both the first main surface and the second main surface; the first insulating material; and the island.
Claim 3
Dependent Claim
25 words
The semiconductor device according to claim 1 , wherein the first insulating material is disposed outwardly beyond all outer sides of the second main surface.
Claim 4
Dependent Claim
20 words
The semiconductor device according to claim 1 , wherein the first insulating material is covered with the second insulating material.
Claim 5
Dependent Claim
17 words
The semiconductor device according to claim 1 , wherein the second insulating material comprises an insulating paste.
Claim 6
Dependent Claim
17 words
The semiconductor device according to claim 1 , wherein the island is supported by a suspending lead.
Claim 7
Dependent Claim
42 words
The semiconductor device according to claim 1 , wherein the first insulating material is formed into a cross intersecting at a portion on the island facing a center of the second main surface, the first insulating material being fixed to the island.
Claim 8
Dependent Claim
59 words
The semiconductor device according to claim 1 , further comprising a first lead to which a positive voltage is applied, a second lead outputting a negative voltage, and a third lead to which a reference voltage is connected, these leads being connected to the semiconductor chip, wherein the semiconductor chip includes a semiconductor substrate connected to the negative voltage.
Claim 9
Dependent Claim
26 words
The semiconductor device according to claim 1 , further comprising a negative voltage generating unit for generating a negative voltage with respect to a reference potential.
Claim 10
Dependent Claim
27 words
The semiconductor device according to claim 1 , constituted as a system power source for generating a plurality of positive voltages with respect to the reference potential.
Claim 11
Dependent Claim
111 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, and the second insulating material has a modulus of elasticity not smaller than 3000 MPa and not greater than 10000 MPa.
Claim 12
Dependent Claim
111 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, and the second insulating material has a modulus of elasticity not smaller than 3000 MPa and not greater than 10000 MPa.
Claim 13
Dependent Claim
111 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, and the first insulating material has a modulus of elasticity not smaller than 1000 MPa and not greater than 5000 MPa.
Claim 14
Dependent Claim
111 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, and the first insulating material has a modulus of elasticity not smaller than 1000 MPa and not greater than 5000 MPa.
Claim 15
Dependent Claim
134 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulatin material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, the semiconductor device further comprising a third insulating material that covers a part of the island, the semiconductor chip, the first insulating material and the second insulating material, wherein the island includes a lower surface exposed to an outside of the third insulating material.
Claim 16
Dependent Claim
134 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulatin material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, the semiconductor device further comprising a third insulating material that covers a part of the island, the semiconductor chip, the first insulating material and the second insulating material, wherein the island includes a lower surface exposed to an outside of the third insulating material.
Claim 17
Dependent Claim
47 words
The semiconductor device according to claim 12 , further comprising: a plurality of leads each having a lower surface at least a part of which is exposed from the third insulating material; and a plurality of bonding wires connecting the plurality of leads to the semiconductor chip.
Claim 18
Dependent Claim
34 words
The semiconductor device according to claim 13 , wherein each of the plurality of leads includes a portion facing the island, and said portion includes a lower surface covered by the third insulating material.
Claim 19
Dependent Claim
105 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, the semiconductor device further comprising a third insulating material attached to the second main surface.
Claim 20
Dependent Claim
105 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, the semiconductor device further comprising a third insulating material attached to the second main surface.
Claim 21
Dependent Claim
104 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, and the first insulating material has a volume resistivity not smaller than 1000 GΩ·cm.
Claim 22
Dependent Claim
104 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, and the first insulating material has a volume resistivity not smaller than 1000 GΩ·cm.
Claim 23
Dependent Claim
115 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, and the first insulating material is fixed to the island so as not to be disposed outwardly beyond outer sides of the second main surface.
Claim 24
Dependent Claim
115 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, and the first insulating material is fixed to the island so as not to be disposed outwardly beyond outer sides of the second main surface.
Claim 25
Dependent Claim
122 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, the second main surface is quadrilateral, and the first insulating material is attached to the island so as not to be disposed outwardly beyond two opposite sides of the second main surface.
Claim 26
Dependent Claim
122 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, the second main surface is quadrilateral, and the first insulating material is attached to the island so as not to be disposed outwardly beyond two opposite sides of the second main surface.
Claim 27
Dependent Claim
117 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, and the first insulating material comprises a plurality of pieces separate from each other and disposed in a region of the island facing the second main surface.
Claim 28
Dependent Claim
117 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, and the first insulating material comprises a plurality of pieces separate from each other and disposed in a region of the island facing the second main surface.
Claim 29
Dependent Claim
104 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, and the first insulating material is formed with a though-hole extending to the island.
Claim 30
Dependent Claim
104 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, and the first insulating material is formed with a though-hole extending to the island.
Claim 31
Dependent Claim
132 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, the first insulating material covers the second main surface, and the second insulating material is held in contact with and fixed to: side surfaces connected to the first main surface and the second main surface; the first insulating material; and the island.
Claim 32
Dependent Claim
132 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, the first insulating material covers the second main surface, and the second insulating material is held in contact with and fixed to: side surfaces connected to the first main surface and the second main surface; the first insulating material; and the island.
Claim 33
Dependent Claim
20 words
The semiconductor device according to claim 21 , wherein the first insulating material is covered with the second insulating material.
Claim 34
Dependent Claim
29 words
The semiconductor device according to claim 21 , wherein the second insulating material has a modulus of elasticity not smaller than 3000 MPa and not greater than 10000 MPa.
Claim 35
Dependent Claim
17 words
The semiconductor device according to claim 21 , wherein the second insulating material comprises an insulating paste.
Claim 36
Dependent Claim
139 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, the semiconductor device further comprising a plated layer includes an outer edge portion formed in a region of the island that surrounds a region with which the second insulating material is held in contact, the outer edge portion reaching at least a part of outer sides of the island.
Claim 37
Dependent Claim
139 words
A semiconductor device, comprising: an island; a first insulating material; a second insulating material higher in modulus of elasticity than the first insulating material; and a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a bonding pad, the second main surface being attached to the island via the first insulating material and the second insulating material; wherein the second insulating material is held in contact with both the island and the semiconductor chip, the semiconductor device further comprising a plated layer includes an outer edge portion formed in a region of the island that surrounds a region with which the second insulating material is held in contact, the outer edge portion reaching at least a part of outer sides of the island.
Claim 38
Dependent Claim
26 words
The semiconductor device according to claim 25 , wherein the outer edge portion is formed in a frame reaching all the outer sides of the island.
Claim 39
Dependent Claim
41 words
The semiconductor device according to claim 25 , wherein the island is formed in a rectangle, and the outer edge portion includes parts that are held in contact with four corners of the island, respectively, and spaced apart between the corners.
Claim 40
Dependent Claim
31 words
The semiconductor device according to claim 25 , further comprising a suspending lead supporting the island, wherein the plated layer further includes a suspending lead portion formed on the suspending lead.
Claim 41
Dependent Claim
63 words
The semiconductor device according to claim 25 , further comprising a plurality of leads and a plurality of wires connecting the plurality of leads to the semiconductor chip, wherein the plated layer further includes a plurality of lead portions each formed at one of the plurality of leads in a region thereof including a part to which one of the wires is connected.
Claim 42
Dependent Claim
16 words
The semiconductor device according to claim 25 , wherein the plated layer is made of Ag.
Claim 43
Independent Claim
116 words
A method for manufacturing a semiconductor device, comprising: forming elements and bonding pads on a first main surface of a semiconductor wafer; attaching a first insulating material to a second main surface of the semiconductor wafer opposite to the first main surface; dicing the semiconductor wafer into separate semiconductor chips; attaching the second main surface of each of the semiconductor chips to an island of a lead frame via a second insulating material; bonding wires to the bonding pads and inner leads of the lead frame; and molding each of the semiconductor chips and the lead frame; wherein the first insulating material is applied to the second main surface of the semiconductor wafer by spin coating.
Claim 44
Independent Claim
116 words
A method for manufacturing a semiconductor device, comprising: forming elements and bonding pads on a first main surface of a semiconductor wafer; attaching a first insulating material to a second main surface of the semiconductor wafer opposite to the first main surface; dicing the semiconductor wafer into separate semiconductor chips; attaching the second main surface of each of the semiconductor chips to an island of a lead frame via a second insulating material; bonding wires to the bonding pads and inner leads of the lead frame; and molding each of the semiconductor chips and the lead frame; wherein the first insulating material is applied to the second main surface of the semiconductor wafer by spin coating.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2017-07-14 | 2018-01-13 | 2018-07-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2021-07-14 | 2022-01-13 | 2022-07-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2025-07-14 | 2026-01-13 | 2026-07-15 | $7700.00 | Window Closed / Lapsed |