US7582547B2
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Method for junction formation in a semiconductor device and the semiconductor device made thereof
Assignee: Imec
•
Filing: 2007-08-03
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Granted: 2009-09-01
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Expires: 2027-08-03
Abstract
Abstract Devices and methods for junction formation in manufacturing a semiconductor device are disclosed. The devices have shallow junction depths far removed from end-of range defects. The method comprises forming an amorphous region in a crystalline semiconductor such as silicon down to a first depth, followed by implantation of a substitutional element such as carbon to a smaller depth than the first depth. The region is then doped with suitable dopants, e.g. phosphorus or boron, and the amorphous layer recrystallized by a thermal process.
Inventors
- 👤 Bartlomiej Jan Pawlak
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:00
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/60; H10D62/00; H10D62/50; H10D62/53; H10P30/208; H10P30/225; H10D30/01; H10D30/021; H10D30/0223; H10D64/00; H10D64/01; H10D64/017; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/017; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
95 words
A method of preparing a semiconductor substrate for forming a semiconductor device therein, comprising: providing a crystalline substrate with its top surface amorphized to a first depth; implanting the top surface of the amorphized substrate with substitutional ions to a second depth smaller than the first depth; annealing the amorphized substrate to recrystallize the substrate thereby substituting the substitutional ions at least partly into the substrate, and after recrystallization of the amorphized substrate, implanting the top surface with dopant ions, wherein annealing the amorphized substrate is performed such that the amorphized substrate is completely recrystallized.
Claim 2
Independent Claim
95 words
A method of preparing a semiconductor substrate for forming a semiconductor device therein, comprising: providing a crystalline substrate with its top surface amorphized to a first depth; implanting the top surface of the amorphized substrate with substitutional ions to a second depth smaller than the first depth; annealing the amorphized substrate to recrystallize the substrate thereby substituting the substitutional ions at least partly into the substrate, and after recrystallization of the amorphized substrate, implanting the top surface with dopant ions, wherein annealing the amorphized substrate is performed such that the amorphized substrate is completely recrystallized.
Claim 3
Dependent Claim
14 words
The method according to claim 1 , wherein the substitutional ions are carbon ions.
Claim 4
Dependent Claim
24 words
The method according to claim 1 , further comprising: depositing a patterned mask layer; and removing the patterned mask layer after annealing the substrate.
Claim 5
Dependent Claim
27 words
The method according to claim 1 , wherein the providing of a substrate comprises: providing a crystalline substrate; and implanting the substrate with a pre-amorphization ion dopant.
Claim 6
Dependent Claim
27 words
The method according to claim 4 , wherein the pre-amorphization ion dopant is selected from the group of Si + , Ge + , Xe, and Ar.
Claim 7
Dependent Claim
26 words
The method according to claim 5 , wherein the implanting of the substrate comprises implanting Si + at an energy approximately between 50 and 300 keV.
Claim 8
Dependent Claim
25 words
The method according to claim 5 , wherein implanting of the substrate comprises implanting Ge + at an energy approximately between 75 en 500 keV
Claim 9
Dependent Claim
16 words
The method according to claim 1 , wherein the first depth is larger than 100 nm.
Claim 10
Dependent Claim
27 words
The method according to claim 1 , wherein the substitutional ion implanting is performed at an energy in the approximate range of 1 keV to 10 keV.
Claim 11
Dependent Claim
30 words
The method according to claim 1 , wherein the substitutional ion implanting is performed with a dose in the approximate range of 1e14 at/cm 2 to 1e15 at/cm 2 .
Claim 12
Dependent Claim
25 words
The method according to claim 1 , wherein the annealing is performed at a temperature in the approximate range of 700° C. to 1100° C.
Claim 13
Dependent Claim
26 words
The method according to claim 1 , wherein the annealing is performed for a time period in the approximate range of 1 s to 1000 s.
Claim 14
Dependent Claim
27 words
The method according to claim 1 , wherein the dopant ions are selected from the group of B, BF3, BF2, B10H14, B18H22, P, PH3, As, and Sb.
Claim 15
Dependent Claim
51 words
A semiconductor device manufactured by a process comprising the method of claim 1 , the device comprising: end-of-range defects at a first depth from the top surface of a substrate; and substitutional ions at least in part of the top surface at a second depth substantially smaller than the first depth.
Claim 16
Dependent Claim
15 words
The semiconductor device according to claim 14 , wherein the substitutional ions are carbon ions.
Claim 17
Dependent Claim
17 words
The semiconductor device according to claim 14 , further comprising substitutional ions in source and drain regions.
Claim 18
Dependent Claim
17 words
The semiconductor device according to claim 15 , further comprising substitutional ions in source and drain regions.
Claim 19
Dependent Claim
16 words
The semiconductor device according to claim 16 , further comprising substitutional ions in a channel region.
Claim 20
Dependent Claim
15 words
The semiconductor device according to claim 17 further comprising substitutional ions in a channel region.
Claim 21
Independent Claim
68 words
A method of manufacturing a semiconductor device, comprising: providing a crystalline substrate with its top surface amorphized to a first depth; implanting the top surface of the amorphized substrate with substitutional ions to a second depth substantially smaller than the first depth; and after the implanting with substitutional ions, annealing the amorphized substrate to recrystallize the substrate thereby substituting the substitutional ions at least partly into the substrate.
Claim 22
Independent Claim
68 words
A method of manufacturing a semiconductor device, comprising: providing a crystalline substrate with its top surface amorphized to a first depth; implanting the top surface of the amorphized substrate with substitutional ions to a second depth substantially smaller than the first depth; and after the implanting with substitutional ions, annealing the amorphized substrate to recrystallize the substrate thereby substituting the substitutional ions at least partly into the substrate.
Claim 23
Dependent Claim
18 words
The method of claim 20 , wherein the annealing is performed to recrystallize substantially the whole amorphized substrate.
Claim 24
Dependent Claim
21 words
The method of claim 20 , further comprising implanting the top surface with dopant ions after the implanting with substitutional ions.
Claim 25
Dependent Claim
13 words
The method of claim 20 , wherein the substitutional ions are carbon ions.
Claim 26
Dependent Claim
11 words
A semiconductor device manufactured by the method of claim 20 .
Claim 27
Dependent Claim
48 words
A semiconductor device, comprising: end-of-range defects at a first depth from the top surface of a substrate; and substitutional ions at least in part of the top surface at a second depth from the top surface of the substrate, the second depth substantially smaller than the first depth.
Claim 28
Dependent Claim
48 words
A semiconductor device, comprising: end-of-range defects at a first depth from the top surface of a substrate; and substitutional ions at least in part of the top surface at a second depth from the top surface of the substrate, the second depth substantially smaller than the first depth.
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