US6936505B2
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Method of forming a shallow junction
Assignee: Intel Corp
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Filing: 2003-05-20
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Granted: 2005-08-30
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Expires: 2023-05-20
Abstract
Abstract A method of forming a shallow junction in a semiconductor substrate is disclosed. The method of one embodiment comprises preamorphizing a first region of a semiconductor substrate to a first depth and implanting recrystallization inhibitors into a second region of the semiconductor substrate. The second region is a part of the first region and has a second depth. Next, a dopant is implanted into a third region of the semiconductor substrate with the third region being a part of the second region and a first annealing is performed to selectively recrystallize the first region that has no recrystallization inhibitors. Next, a second annealing is performed to recrystallize the second region and diffuse the dopant within the second region.
Inventors
- 👤 Patrick H. Keys
- 👤 Stephen M. Cea
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 17:37
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10P30/208; H10P30/21; H10P30/222; H10P30/226; H10P30/28; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10P95/90; H10D30/60; H10D30/601; H10D64/00; H10D64/01; H10D64/021
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
107 words
A method of forming a shallow junction in a semiconductor substrate comprising: preamorphizing a first region of a semiconductor substrate to a first depth; implanting recrystallization inhibitors into a second region of said semiconductor substrate, said second region being a part of said first region and having a second depth; implanting a dopant into a third region of said semiconductor substrate wherein said third region is a part of said second region, and performing a first annealing to selectively recrystallize said first region that has no recrystallization inhibitors; and performing a second annealing to recrystallize said second region and to diffuse said dopant within said second region.
Claim 2
Independent Claim
107 words
A method of forming a shallow junction in a semiconductor substrate comprising: preamorphizing a first region of a semiconductor substrate to a first depth; implanting recrystallization inhibitors into a second region of said semiconductor substrate, said second region being a part of said first region and having a second depth; implanting a dopant into a third region of said semiconductor substrate wherein said third region is a part of said second region, and performing a first annealing to selectively recrystallize said first region that has no recrystallization inhibitors; and performing a second annealing to recrystallize said second region and to diffuse said dopant within said second region.
Claim 3
Dependent Claim
15 words
The method of claim 1 wherein said second depth is smaller than said first depth.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein said preamorphizing comprises implanting amorphizing ions into said first region.
Claim 5
Dependent Claim
30 words
The method of claim 1 wherein said preamorphizing comprises implanting amorphizing ions into said first region wherein said amorphizing ions include at least one of silicon, germanium, indium, and gallium.
Claim 6
Dependent Claim
29 words
The method of claim 1 wherein said implanting recrystallization inhibitors comprises implanting at least one of oxygen, nitrogen, carbon, neon, argon, krypton, fluorine, and chlorine into said second region.
Claim 7
Dependent Claim
19 words
The method of claim 1 wherein said first annealing occurs at a substantially lower temperature than said second annealing.
Claim 8
Dependent Claim
14 words
The method of claim 1 wherein said second annealing is a laser annealing process.
Claim 9
Dependent Claim
27 words
The method of claim 1 wherein said first annealing occurs at a temperature that does not permit recrystallization of said second region that includes said recrystallization inhibitors.
Claim 10
Dependent Claim
20 words
The method of claim 1 wherein said first annealing has a temperature between about 400° C. and about 800° C.
Claim 11
Dependent Claim
19 words
The method of claim 1 wherein said first annealing occurs before said implanting said dopant into said third region.
Claim 12
Dependent Claim
82 words
A semiconductor device comprising: a semiconductor substrate having an insulation layer disposed thereon and a gate electrode located on said insulation layer, said semiconductor substrate includes amorphizing ions and recrystallization inhibitors having been implanted into a region of said substrate, said amorphizing ions having been implanted deeper into said substrate than said recrystallization inhibitors; and source/drain extensions formed within said region of said substrate that includes said recrystallization inhibitors, said source/drain regions are formed in a substantially defect-free region of said substrate.
Claim 13
Dependent Claim
82 words
A semiconductor device comprising: a semiconductor substrate having an insulation layer disposed thereon and a gate electrode located on said insulation layer, said semiconductor substrate includes amorphizing ions and recrystallization inhibitors having been implanted into a region of said substrate, said amorphizing ions having been implanted deeper into said substrate than said recrystallization inhibitors; and source/drain extensions formed within said region of said substrate that includes said recrystallization inhibitors, said source/drain regions are formed in a substantially defect-free region of said substrate.
Claim 14
Dependent Claim
25 words
The semiconductor device of claim 11 wherein said amorphizing ions and recrystallization inhibitors are implanted into said region of said substrate at a tilt angle.
Claim 15
Dependent Claim
24 words
The semiconductor device of claim 11 wherein said recrystallization inhibitors include at least one of oxygen, nitrogen, carbon, neon, argon, krypton, fluorine, and chlorine.
Claim 16
Dependent Claim
20 words
The semiconductor device of claim 11 wherein said amorphizing ions include at least one of silicon, germanium, indium, and gallium.
Claim 17
Dependent Claim
15 words
The semiconductor device of claim 11 further comprising: deep source/drain regions formed in said substrate.
Claim 18
Dependent Claim
15 words
The semiconductor device of claim 11 further comprising: sidewall spacers formed on said gate electrode.
Claim 19
Dependent Claim
94 words
A semiconductor device comprising: a semiconductor substrate having an insulation layer disposed thereon and a gate electrode located on said insulation layer, said semiconductor substrate includes amorphizing ions and recrystallization inhibitors having been implanted into a region of said substrate, said amorphizing ions having been implanted deeper into said substrate than said recrystallization inhibitors; source/drain extensions formed within said region of said substrate that includes said recrystallization inhibitors, said source/drain regions are formed in a substantially defect-free region of said substrate; and wherein said source/drain regions are formed spatially away from an end-of-range dislocation.
Claim 20
Dependent Claim
94 words
A semiconductor device comprising: a semiconductor substrate having an insulation layer disposed thereon and a gate electrode located on said insulation layer, said semiconductor substrate includes amorphizing ions and recrystallization inhibitors having been implanted into a region of said substrate, said amorphizing ions having been implanted deeper into said substrate than said recrystallization inhibitors; source/drain extensions formed within said region of said substrate that includes said recrystallization inhibitors, said source/drain regions are formed in a substantially defect-free region of said substrate; and wherein said source/drain regions are formed spatially away from an end-of-range dislocation.
Claim 21
Dependent Claim
102 words
A semiconductor device comprising: a semiconductor substrate having an insulation layer disposed thereon and a gate electrode located on said insulation layer, said semiconductor substrate includes amorphizing ions and recrystallization inhibitors having been implanted into a region of said substrate, said amorphizing ions having been implanted deeper into said substrate than said recrystallization inhibitors; source/drain extensions formed within said region of said substrate that includes said recrystallization inhibitors, said source/drain regions are formed in a substantially defect-free region of said substrate; and wherein said source/drain regions have a depth that is substantially smaller than the depth for end-of-range dislocations in said substrate.
Claim 22
Dependent Claim
102 words
A semiconductor device comprising: a semiconductor substrate having an insulation layer disposed thereon and a gate electrode located on said insulation layer, said semiconductor substrate includes amorphizing ions and recrystallization inhibitors having been implanted into a region of said substrate, said amorphizing ions having been implanted deeper into said substrate than said recrystallization inhibitors; source/drain extensions formed within said region of said substrate that includes said recrystallization inhibitors, said source/drain regions are formed in a substantially defect-free region of said substrate; and wherein said source/drain regions have a depth that is substantially smaller than the depth for end-of-range dislocations in said substrate.
Claim 23
Independent Claim
113 words
A method of forming a semiconductor device comprising: providing a substrate; forming a dielectric layer on said substrate; forming a gate structure located on said dielectric layer; preamorphizing a first region of a semiconductor substrate, said first region having a first depth; implanting recrystallization inhibitors into a second region of said semiconductor substrate, said second region having a second depth that is shallower than said first depth; performing implanting a dopant into said second region to form a source/drain extension and performing a first annealing at low temperature to selectively recrystallize said first region; and performing a second annealing to recrystallize said second region and to diffuse said dopant within said second region.
Claim 24
Independent Claim
113 words
A method of forming a semiconductor device comprising: providing a substrate; forming a dielectric layer on said substrate; forming a gate structure located on said dielectric layer; preamorphizing a first region of a semiconductor substrate, said first region having a first depth; implanting recrystallization inhibitors into a second region of said semiconductor substrate, said second region having a second depth that is shallower than said first depth; performing implanting a dopant into said second region to form a source/drain extension and performing a first annealing at low temperature to selectively recrystallize said first region; and performing a second annealing to recrystallize said second region and to diffuse said dopant within said second region.
Claim 25
Dependent Claim
13 words
The method of claim 19 wherein said preamorphizing being at a tilt angle.
Claim 26
Dependent Claim
14 words
The method of claim 19 wherein said second annealing is a laser annealing process.
Claim 27
Dependent Claim
14 words
The method of claim 19 further comprises forming sidewall spacers on said gate electrode.
Claim 28
Dependent Claim
14 words
The method of claim 19 further comprises forming deep source/drain regions in said substrate.
Claim 29
Dependent Claim
30 words
The method of claim 19 wherein said preamorphizing comprises implanting amorphizing ions into said first region wherein said amorphizing ions include at least one of silicon, germanium, indium, and gallium.
Claim 30
Dependent Claim
29 words
The method of claim 19 wherein said implanting recrystallization inhibitors comprises implanting at least one of oxygen, nitrogen, carbon, neon, argon, krypton, fluorine, and chlorine into said second region.
Claim 31
Dependent Claim
19 words
The method of claim 19 wherein said first annealing occurs at a substantially lower temperature than said second annealing.
Claim 32
Dependent Claim
26 words
The method of claim 19 wherein said first annealing occurs at a temperature that does not permit recrystallization of second region which includes said recrystallization inhibitors.
Claim 33
Dependent Claim
21 words
The method of claim 19 wherein said first annealing occurs at a temperature between about 400° C. and about 800° C.
Claim 34
Dependent Claim
19 words
The method of claim 19 wherein said first annealing occurs before said implanting said dopant into said second region.
References Cited (Backward Citations)
US6307232B1
Cited
US20040188767A1
Cited
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