Patent US7511591B2 successfully refreshed from Google Patents.
US7511591B2
Expired / Lapsed
US
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Setting of the impedance ratio of a balun
Assignee: STMicroelectronics France SAS
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Filing: 2005-10-25
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Granted: 2009-03-31
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Expires: 2025-10-25
Abstract
Abstract The modification of the impedance ratio of a balun of four conductive windings formed in two metallization planes stacked by being interdigited and electrically in series two by two, by connecting a capacitor in series with the two windings defining the common mode of the balun.
Inventors
- 👤 Hilal Ezzendine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 15:07
CPC Classifications
H; H03; H03H; H03H7/00; H03H7/42; H01; H01F; H01F38/00; H01F38/48; H01F17/00; H01F17/0006; H01F17/0013
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
179 words
A balun of distributed type, formed of planar conductive windings defining inductive elements comprising: in a first conductive level, a first winding between a first common-mode access and a first central end and a second winding between a first differential-mode access and a second central end; in a second conductive level, a third winding having a central end electrically connected to the first central end of the first level and having an external end defining a second common-mode access, and a fourth winding having an external end defining a second differential-mode access and having a central end electrically connected to the second central end of the first level; and a third conductive level forming a ground plane to which are electrically connected the central interconnected ends of the second and fourth differential-mode windings, the external end of the third winding being electrically connected to a surface defining a first electrode of a capacitor having a second electrode connected to the ground plane, and the value of the capacitor being selected according to the impedance ratio desired for the transformer.
Claim 2
Dependent Claim
179 words
A balun of distributed type, formed of planar conductive windings defining inductive elements comprising: in a first conductive level, a first winding between a first common-mode access and a first central end and a second winding between a first differential-mode access and a second central end; in a second conductive level, a third winding having a central end electrically connected to the first central end of the first level and having an external end defining a second common-mode access, and a fourth winding having an external end defining a second differential-mode access and having a central end electrically connected to the second central end of the first level; and a third conductive level forming a ground plane to which are electrically connected the central interconnected ends of the second and fourth differential-mode windings, the external end of the third winding being electrically connected to a surface defining a first electrode of a capacitor having a second electrode connected to the ground plane, and the value of the capacitor being selected according to the impedance ratio desired for the transformer.
Claim 3
Dependent Claim
25 words
The transformer of claim 1 , wherein all the conductive windings have same dimensions, selected according to the central operating frequency desired for the transformer.
Claim 4
Dependent Claim
20 words
The transformer of claim 1 , wherein the second electrode of the capacitor is formed directly by the ground plane.
Claim 5
Dependent Claim
88 words
A distributed balun, comprising: a first winding formed in a first level; a second winding formed in the first level and interdigitated with the first winding; a third winding formed in a second level; a fourth winding formed in the second level and interdigitated with the third winding; and a capacitor coupled to the third winding and having a value selected to establish a desired impedance ratio for the balun; wherein the value of the capacitor is selected such that the distributed balun has a non-unity impedance ratio.
Claim 6
Dependent Claim
88 words
A distributed balun, comprising: a first winding formed in a first level; a second winding formed in the first level and interdigitated with the first winding; a third winding formed in a second level; a fourth winding formed in the second level and interdigitated with the third winding; and a capacitor coupled to the third winding and having a value selected to establish a desired impedance ratio for the balun; wherein the value of the capacitor is selected such that the distributed balun has a non-unity impedance ratio.
Claim 7
Dependent Claim
27 words
The distributed balun of claim 4 , wherein the first, second, third and fourth windings are aligned with one another so as to form a single stack.
Claim 8
Dependent Claim
117 words
A distributed balun, comprising: a first winding formed in a first level; a second winding formed in the first level and interdigitated with the first winding; a third winding formed in a second level; a fourth winding formed in the second level and interdigitated with the third winding, wherein the second winding is connected in series with the fourth winding; a capacitor coupled to the third winding and having a value selected to establish a desired impedance ratio for the balun; and a ground plane connected to the second and fourth windings at a node connecting the second and fourth windings, the ground plane being formed in a third level different from the first and second levels.
Claim 9
Dependent Claim
117 words
A distributed balun, comprising: a first winding formed in a first level; a second winding formed in the first level and interdigitated with the first winding; a third winding formed in a second level; a fourth winding formed in the second level and interdigitated with the third winding, wherein the second winding is connected in series with the fourth winding; a capacitor coupled to the third winding and having a value selected to establish a desired impedance ratio for the balun; and a ground plane connected to the second and fourth windings at a node connecting the second and fourth windings, the ground plane being formed in a third level different from the first and second levels.
Claim 10
Dependent Claim
31 words
The distributed balun of claim 6 , wherein a first electrode of the capacitor is formed in the second level and the ground plane provides a second electrode of the capacitor.
Claim 11
Dependent Claim
36 words
The distributed balun of claim 6 , wherein the second and fourth windings are connected by a via that extends between a central portion of the second winding and a central portion of the fourth winding.
Claim 12
Dependent Claim
38 words
The distributed balun of claim 6 , wherein the first and third windings are connected in series by a via that extends between a central portion of the first winding and a central portion of the third winding.
Claim 13
Dependent Claim
48 words
The distributed balun of claim 6 , further comprising an insulator that separates the first level from the second level, wherein a thickness of the insulator separating the first and second levels has no substantial effect on a coupling between common and differential modes of the distributed balun.
Claim 14
Dependent Claim
14 words
The distributed balun of claim 6 , wherein the distributed balun is of Marchand-type.
Claim 15
Dependent Claim
25 words
The distributed balun of claim 6 , wherein the value of the capacitor is selected such tat the distributed balun has a non-unity impedance ratio.
Claim 16
Dependent Claim
34 words
The distributed balun of claim 6 , wherein the distributed balun is configured such that the value of the capacitor has no substantial effect on a central frequency of operation of the distributed balun.
Claim 17
Dependent Claim
27 words
The distributed balun of claim 6 , wherein the first, second, third and fourth windings are aligned with one another so as to form a single stack.
Claim 18
Dependent Claim
45 words
The distributed balun of claim 14 , wherein the first winding comprises a first common-mode access terminal, the second winding comprises a first differential-mode access terminal, the third winding comprises a second common-mode access terminal and the fourth winding comprises a second differential-mode access terminal.
Claim 19
Dependent Claim
86 words
A distributed balun, comprising: a first winding formed in a first level; a second winding formed in the first level and interdigitated with the first winding; a third winding formed in a second level; a fourth winding formed in the second level and interdigitated with the third winding; and a capacitor having a value selected to establish a desired impedance ratio for the balun, the capacitor being coupled to the third winding; wherein the first, second, third and fourth windings are arranged in a single stack.
Claim 20
Dependent Claim
86 words
A distributed balun, comprising: a first winding formed in a first level; a second winding formed in the first level and interdigitated with the first winding; a third winding formed in a second level; a fourth winding formed in the second level and interdigitated with the third winding; and a capacitor having a value selected to establish a desired impedance ratio for the balun, the capacitor being coupled to the third winding; wherein the first, second, third and fourth windings are arranged in a single stack.
Claim 21
Dependent Claim
45 words
The distributed balun of claim 16 , wherein the first winding comprises a first common-mode access terminal, the second winding comprises a first differential-mode access terminal, the third winding comprises a second common-mode access terminal and the fourth winding comprises a second differential-mode access terminal.
Claim 22
Dependent Claim
31 words
The distributed balun of claim 16 , wherein the first winding is connected in series with the third winding and the second winding is connected in series with the fourth winding.
Claim 23
Dependent Claim
32 words
The distributed balun of claim 16 , wherein first level comprises a first metallization level of an integrated circuit and the second level comprises a second metallization level of the integrated circuit.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 2012-03-30 | 2012-09-29 | 2013-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2016-03-30 | 2016-09-29 | 2017-03-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2020-03-30 | 2020-09-29 | 2021-03-31 | $7700.00 | Window Closed / Lapsed |