US7387742B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon blades for surgical and non-surgical use
Assignee: Beaver Visitec International US Inc
•
Filing: 2004-09-17
•
Granted: 2008-06-17
•
Expires: 2024-09-17
Abstract
Abstract Ophthalmic surgical blades are manufactured from either a crystalline or polycrystalline material, preferably in the form of a wafer. The method comprises preparing the crystalline or polycrystalline wafers by mounting them and machining trenches into the wafers. Methods for machining the trenches, which form the bevel blade surfaces, include a diamond blade saw, laser system, ultrasonic machine, a hot forge press and a router. The wafers are then placed in an etchant solution which isotropically etches the wafers in a uniform manner, such that layers of crystalline or polycrystalline material are removed uniformly, producing single, double or multiple bevel blades. Nearly any bevel angle can be machined into the wafer which remains after etching. The resulting radii of the blade edges is 5-500 nm, which is the same caliber as a diamond edged blade, but manufactured at a fraction of the cost. The ophthalmic surgical blades can be used for cataract and refractive surgical procedures, as well as microsurgical, biological and non-medical, non-biological purposes.
Inventors
- 👤 Vadim M. Daskal
- 👤 Joseph F. Keenan
- 👤 James Joseph Hughes
- 👤 Attila E. Kiss
- 👤 Susan M. Chavez
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 08:01
CPC Classifications
A; A61; A61B; A61B17/00; A61B17/32; A61B17/3209; A61B17/3211; A61F; A61F9/00; A61F9/007; A61F9/013; A61F9/0133; A61B2017/00526
Claims Analysis
Total Claims: 57
Claim 1
Independent Claim
173 words
A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising: machining a first blade profile in the wafer of crystalline material on its first side, wherein the first blade profile comprises a first facet that comprises a cutting edge of the at least one cutting device, and the first blade profile further comprises a second facet adjacent to the first facet; machining a second blade profile in the wafer of crystalline material on its second side, wherein the second blade profile comprises a third facet that comprises, along with the first facet, the cutting edge of the at least one cutting device, and the second blade profile further comprises a fourth facet adjacent to the third facet; and etching the wafer of crystalline material to form the at least one cutting device; wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the at least first blade profile.
Claim 2
Independent Claim
173 words
A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising: machining a first blade profile in the wafer of crystalline material on its first side, wherein the first blade profile comprises a first facet that comprises a cutting edge of the at least one cutting device, and the first blade profile further comprises a second facet adjacent to the first facet; machining a second blade profile in the wafer of crystalline material on its second side, wherein the second blade profile comprises a third facet that comprises, along with the first facet, the cutting edge of the at least one cutting device, and the second blade profile further comprises a fourth facet adjacent to the third facet; and etching the wafer of crystalline material to form the at least one cutting device; wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the at least first blade profile.
Claim 3
Dependent Claim
19 words
The method according to claim 1 , further comprising: singulating the at least one etched crystalline material cutting device.
Claim 4
Dependent Claim
42 words
The method according to claim 1 , wherein the step of etching comprises: forming a first included angle that comprises the first angle of the first bevel; and forming a second included angle that comprises the second angle of the second bevel.
Claim 5
Dependent Claim
44 words
The method according to claim 1 , wherein the step of machining a first blade profile in the wafer of crystalline material on its first side comprises: machining the first facet at a first angle; and machining the second facet at a second angle.
Claim 6
Dependent Claim
44 words
The method according to claim 1 , wherein the step of machining a second blade profile in the wafer of crystalline material on its first side comprises: machining the third facet at the first angle; and machining the fourth facet at the second angle.
Claim 7
Dependent Claim
20 words
The method according to claim 1 , further comprising: coating the first side of the machined wafer of crystalline material.
Claim 8
Dependent Claim
51 words
The method according to claim 6 , wherein the coating step comprises: coating the first side of the machined wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
Claim 9
Dependent Claim
46 words
The method according to claim 1 , further comprising: coating the first side of the wafer of crystalline material after the step of machining the wafer of crystalline material; and mounting the wafer of crystalline material on its first side prior to the step of etching.
Claim 10
Dependent Claim
51 words
The method according to claim 8 , wherein the coating step comprises: coating the first side of the formed wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
Claim 11
Dependent Claim
13 words
The method according to claim 1 , wherein the crystalline material comprises silicon.
Claim 12
Dependent Claim
23 words
The method according to claim 1 , further comprising: forming a conversion layer on the surface of the at least one cutting device.
Claim 13
Independent Claim
511 words
A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising: machining a first variable blade profile in the wafer of crystalline material on its first side, wherein the first variable blade profile comprises a first facet that comprises a first cutting edge of the cutting device, and varies from a first angle at an apex of the cutting device to a second angle at a first distance from the apex of the cutting device, and wherein the first cutting edge is formed by the machining of the first blade profile from the apex of the cutting device at a third angle with respect to a centerline of the cutting device; machining a second variable blade profile in the wafer of crystalline material on its first side, wherein the second variable blade profile comprises a second facet that comprises a second cutting edge of the cutting device, and varies from a first angle at an apex of the cutting device to a second angle at a first distance from the apex of the cutting device, and wherein the second cutting edge is formed by the machining of the first blade profile from the apex of the cutting device at a third angle with respect to a centerline of the cutting device to a point substantially directly opposite where the first blade profile ends; machining a third variable blade profile in the wafer of crystalline material on its second side, wherein the third variable blade profile comprises a third facet that comprises the first cutting edge of the cutting device, and varies from a first angle at the apex of the cutting device to a second angle at a first distance from the apex of the cutting device, and wherein the first cutting edge is formed by the machining of the third variable blade profile from the apex of the cutting device at a third angle with respect to a centerline of the cutting device to a point substantially directly underneath the point where the first variable blade profile ends; machining a fourth variable blade profile in the wafer of crystalline material on its second side, wherein the fourth variable blade profile comprises a fourth facet that comprises the second cutting edge of the cutting device, and varies from a first angle at the apex of the cutting device to a second angle at a first distance from the apex of the cutting device, and wherein the second cutting edge is formed by the machining of the fourth variable blade profile from the apex of the cutting device at a third angle with respect to the centerline of the cutting device to a point substantially directly underneath the point where the second variable blade profile ends; and etching the wafer of crystalline material to form the at least one cutting device; wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the at least first variable blade profile.
Claim 14
Independent Claim
511 words
A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising: machining a first variable blade profile in the wafer of crystalline material on its first side, wherein the first variable blade profile comprises a first facet that comprises a first cutting edge of the cutting device, and varies from a first angle at an apex of the cutting device to a second angle at a first distance from the apex of the cutting device, and wherein the first cutting edge is formed by the machining of the first blade profile from the apex of the cutting device at a third angle with respect to a centerline of the cutting device; machining a second variable blade profile in the wafer of crystalline material on its first side, wherein the second variable blade profile comprises a second facet that comprises a second cutting edge of the cutting device, and varies from a first angle at an apex of the cutting device to a second angle at a first distance from the apex of the cutting device, and wherein the second cutting edge is formed by the machining of the first blade profile from the apex of the cutting device at a third angle with respect to a centerline of the cutting device to a point substantially directly opposite where the first blade profile ends; machining a third variable blade profile in the wafer of crystalline material on its second side, wherein the third variable blade profile comprises a third facet that comprises the first cutting edge of the cutting device, and varies from a first angle at the apex of the cutting device to a second angle at a first distance from the apex of the cutting device, and wherein the first cutting edge is formed by the machining of the third variable blade profile from the apex of the cutting device at a third angle with respect to a centerline of the cutting device to a point substantially directly underneath the point where the first variable blade profile ends; machining a fourth variable blade profile in the wafer of crystalline material on its second side, wherein the fourth variable blade profile comprises a fourth facet that comprises the second cutting edge of the cutting device, and varies from a first angle at the apex of the cutting device to a second angle at a first distance from the apex of the cutting device, and wherein the second cutting edge is formed by the machining of the fourth variable blade profile from the apex of the cutting device at a third angle with respect to the centerline of the cutting device to a point substantially directly underneath the point where the second variable blade profile ends; and etching the wafer of crystalline material to form the at least one cutting device; wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the at least first variable blade profile.
Claim 15
Dependent Claim
19 words
The method according to claim 12 , further comprising: singulating the at least one etched crystalline material cutting device.
Claim 16
Dependent Claim
20 words
The method according to claim 12 , further comprising: coating the first side of the machined wafer of crystalline material.
Claim 17
Dependent Claim
51 words
The method according to claim 14 , wherein the coating step comprises: coating the first side of the machined wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
Claim 18
Dependent Claim
46 words
The method according to claim 12 , further comprising: coating the first side of the wafer of crystalline material after the step of machining the wafer of crystalline material; and mounting the wafer of crystalline material on its first side prior to the step of etching.
Claim 19
Dependent Claim
51 words
The method according to claim 16 , wherein the coating step comprises: coating the first side of the formed wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
Claim 20
Dependent Claim
13 words
The method according to claim 12 , wherein the crystalline material comprises silicon.
Claim 21
Dependent Claim
23 words
The method according to claim 12 , further comprising: forming a conversion layer on the surface of the at least one cutting device.
Claim 22
Independent Claim
223 words
A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising: machining a first curved blade profile in the wafer of crystalline material on its first side, wherein the first curved blade profile comprises a first facet that comprises a first cutting edge of the cutting device, and wherein the first cutting edge is formed by the machining of the first blade profile from an apex of the cutting device at about a first angle with respect to a centerline of the cutting device for about a first distance; machining a second curved blade profile in the wafer of crystalline material on its first side, wherein the second curved blade profile comprises a second facet that comprises a second cutting edge of the cutting device, and wherein the second cutting edge is formed by the machining of the first blade profile from the apex of the cutting device at about the first angle with respect to a centerline of the cutting device for about the first distance; and etching the wafer of crystalline material to form the at least one cutting device; wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the at least first curved blade profile.
Claim 23
Independent Claim
223 words
A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising: machining a first curved blade profile in the wafer of crystalline material on its first side, wherein the first curved blade profile comprises a first facet that comprises a first cutting edge of the cutting device, and wherein the first cutting edge is formed by the machining of the first blade profile from an apex of the cutting device at about a first angle with respect to a centerline of the cutting device for about a first distance; machining a second curved blade profile in the wafer of crystalline material on its first side, wherein the second curved blade profile comprises a second facet that comprises a second cutting edge of the cutting device, and wherein the second cutting edge is formed by the machining of the first blade profile from the apex of the cutting device at about the first angle with respect to a centerline of the cutting device for about the first distance; and etching the wafer of crystalline material to form the at least one cutting device; wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the at least first curved blade profile.
Claim 24
Dependent Claim
19 words
The method according to claim 20 , further comprising: singulating the at least one etched crystalline material cutting device.
Claim 25
Dependent Claim
20 words
The method according to claim 20 , further comprising: coating the first side of the machined wafer of crystalline material.
Claim 26
Dependent Claim
51 words
The method according to claim 22 , wherein the coating step comprises: coating the first side of the machined wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
Claim 27
Dependent Claim
46 words
The method according to claim 20 , further comprising: coating the first side of the wafer of crystalline material after the step of machining the wafer of crystalline material; and mounting the wafer of crystalline material on its first side prior to the step of etching.
Claim 28
Dependent Claim
51 words
The method according to claim 24 , wherein the coating step comprises: coating the first side of the formed wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
Claim 29
Dependent Claim
13 words
The method according to claim 20 , wherein the crystalline material comprises silicon.
Claim 30
Dependent Claim
23 words
The method according to claim 20 , further comprising: forming a conversion layer on the surface of the at least one cutting device.
Claim 31
Independent Claim
126 words
A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising: machining a first bevel in the wafer of crystalline material on its first side, wherein the first bevel comprises a cutting edge of the at least one cutting device; machining a second bevel in the wafer of crystalline material on its second side, wherein the second bevel comprises, along with the first bevel, the cutting edge of the at least one cutting device; and etching the wafer of crystalline material to form the at least one cutting device; wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the cutting edge.
Claim 32
Independent Claim
126 words
A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising: machining a first bevel in the wafer of crystalline material on its first side, wherein the first bevel comprises a cutting edge of the at least one cutting device; machining a second bevel in the wafer of crystalline material on its second side, wherein the second bevel comprises, along with the first bevel, the cutting edge of the at least one cutting device; and etching the wafer of crystalline material to form the at least one cutting device; wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the cutting edge.
Claim 33
Dependent Claim
19 words
The method according to claim 28 , further comprising: singulating the at least one etched crystalline material cutting device.
Claim 34
Dependent Claim
20 words
The method according to claim 28 , further comprising: coating the first side of the machined wafer of crystalline material.
Claim 35
Dependent Claim
51 words
The method according to claim 30 , wherein the coating step comprises: coating the first side of the machined wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
Claim 36
Dependent Claim
46 words
The method according to claim 28 , further comprising: coating the first side of the wafer of crystalline material after the step of machining the wafer of crystalline material; and mounting the wafer of crystalline material on its first side prior to the step of etching.
Claim 37
Dependent Claim
51 words
The method according to claim 32 , wherein the coating step comprises: coating the first side of the formed wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
Claim 38
Dependent Claim
13 words
The method according to claim 28 , wherein the crystalline material comprises silicon.
Claim 39
Dependent Claim
23 words
The method according to claim 28 , further comprising: forming a conversion layer on the surface of the at least one cutting device.
Claim 40
Independent Claim
122 words
A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising: machining a bevel in the wafer of crystalline material on its first side, wherein the bevel comprises a cutting edge of the at least one cutting device, and wherein the machining begins at a first point and continues to a second point along an arc at a substantially constant radius for a first angular distance that is substantially circular; and etching the wafer of crystalline material to form the at least one cutting device; wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the cutting edge.
Claim 41
Independent Claim
122 words
A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising: machining a bevel in the wafer of crystalline material on its first side, wherein the bevel comprises a cutting edge of the at least one cutting device, and wherein the machining begins at a first point and continues to a second point along an arc at a substantially constant radius for a first angular distance that is substantially circular; and etching the wafer of crystalline material to form the at least one cutting device; wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the cutting edge.
Claim 42
Dependent Claim
19 words
The method according to claim 36 , further comprising: singulating the at least one etched crystalline material cutting device.
Claim 43
Dependent Claim
20 words
The method according to claim 36 , further comprising: coating the first side of the machined wafer of crystalline material.
Claim 44
Dependent Claim
51 words
The method according to claim 38 , wherein the coating step comprises: coating the first side of the machined wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
Claim 45
Dependent Claim
46 words
The method according to claim 36 , further comprising: coating the first side of the wafer of crystalline material after the step of machining the wafer of crystalline material; and mounting the wafer of crystalline material on its first side prior to the step of etching.
Claim 46
Dependent Claim
51 words
The method according to claim 40 , wherein the coating step comprises: coating the first side of the formed wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
Claim 47
Dependent Claim
13 words
The method according to claim 36 , wherein the crystalline material comprises silicon.
Claim 48
Dependent Claim
23 words
The method according to claim 36 , further comprising: forming a conversion layer on the surface of the at least one cutting device.
Claim 49
Independent Claim
180 words
A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising: machining a bevel in the wafer of crystalline material on its first side, wherein the bevel comprises a cutting edge of the at least one cutting device, and wherein the machining begins at a first point that is at a first angle to a centerline of the cutting device, continues to a second point for a first distance in a linear fashion, then continues from the second point to a third point along an arc at a substantially constant radius for a first angular distance that is substantially circular to a third point, and continues from the third point to a fourth point at about the first angle for about the first distance in a linear fashion; and etching the wafer of crystalline material to form the at least one cutting device; wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the cutting edge.
Claim 50
Independent Claim
180 words
A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising: machining a bevel in the wafer of crystalline material on its first side, wherein the bevel comprises a cutting edge of the at least one cutting device, and wherein the machining begins at a first point that is at a first angle to a centerline of the cutting device, continues to a second point for a first distance in a linear fashion, then continues from the second point to a third point along an arc at a substantially constant radius for a first angular distance that is substantially circular to a third point, and continues from the third point to a fourth point at about the first angle for about the first distance in a linear fashion; and etching the wafer of crystalline material to form the at least one cutting device; wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the cutting edge.
Claim 51
Dependent Claim
19 words
The method according to claim 44 , further comprising: singulating the at least one etched crystalline material cutting device.
Claim 52
Dependent Claim
20 words
The method according to claim 44 , further comprising: coating the first side of the machined wafer of crystalline material.
Claim 53
Dependent Claim
51 words
The method according to claim 46 , wherein the coating step comprises: coating the first side of the machined wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
Claim 54
Dependent Claim
46 words
The method according to claim 44 , further comprising: coating the first side of the wafer of crystalline material after the step of machining the wafer of crystalline material; and mounting the wafer of crystalline material on its first side prior to the step of etching.
Claim 55
Dependent Claim
51 words
The method according to claim 48 , wherein the coating step comprises: coating the first side of the formed wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
Claim 56
Dependent Claim
13 words
The method according to claim 44 , wherein the crystalline material comprises silicon.
Claim 57
Dependent Claim
23 words
The method according to claim 44 , further comprising: forming a conversion layer on the surface of the at least one cutting device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2011-06-17 | 2011-12-17 | 2012-06-17 | $2000.00 | Window Closed / Lapsed |
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