US7241641B2
Expired / Lapsed
US
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Attachment of integrated circuit structures and other substrates to substrates with vias
Assignee: Adeia Semiconductor Technologies LLC
•
Filing: 2005-10-19
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Granted: 2007-07-10
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Expires: 2025-10-19
Abstract
Abstract Vias ( 210, 210 B) are formed in a surface of a substrate. At least portions of contact pads ( 139, 350 ) are located in the vias. Contact pads ( 150, 340 ) of an integrated circuit structure are inserted into the vias and attached to the contact pads ( 139, 350 ) of the substrate. The vias provide a strong, reliable mechanical and electrical connection. A via may expose not only a contact pad ( 350 ) in the substrate but also a surrounding region. Solder ( 930 ) wets the contact pad better than the surrounding region, resulting in a stronger solder joint and better electrical conductivity. Alternatively, the contact may include multiple conductive layers ( 910.1, 910.2 ), with the top layer ( 910.2 ) being more solder wettable than the bottom layer ( 910.1 ) and the top layer covering only a portion of the bottom layer.
Inventors
- 👤 Sergey Savastiouk
- 👤 Sam Kao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:40
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/021; H10W20/023; H10W20/0245; H10W20/0249; H10W20/0261; H10W20/20; H10W70/00; H10W70/60; H10W70/611; H10W70/62; H10W70/63; H10W70/635; H10W70/67; H10W70/68; H10W70/69; H10W70/698; H10W90/00; H10W90/401; H10W90/701; H10W70/685; H10W72/00; H10W72/20; H10W72/241; H10W72/242; H10W72/281; H10W72/283; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W74/00; H10W74/10; H10W74/15; H10W90/721; H10W90/724; H10W90/731; H10W90/734; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
161 words
A manufacturing method comprising: (1) obtaining a first integrated circuit structure comprising: a semiconductor substrate; one or more first conductive contact pads protruding out at a surface of the first integrated circuit structure; (2) obtaining a first substrate comprising a circuit which comprises one or more first conductive contact pads, wherein at least a portion of each of the one or more first contact pads of the first substrate is located in a corresponding via in a surface of the first substrate, the portion having a first surface facing a sidewall of the via and a second surface opposite to the first surface, the second surface facing an interior of the via and extending upward along the sidewall; (3) inserting the protruding first contact pads of the first integrated circuit structure into the corresponding vias of the first substrate and attaching the protruding first contact pads of the first integrated circuit structure to the first contact pads of the first substrate.
Claim 2
Dependent Claim
161 words
A manufacturing method comprising: (1) obtaining a first integrated circuit structure comprising: a semiconductor substrate; one or more first conductive contact pads protruding out at a surface of the first integrated circuit structure; (2) obtaining a first substrate comprising a circuit which comprises one or more first conductive contact pads, wherein at least a portion of each of the one or more first contact pads of the first substrate is located in a corresponding via in a surface of the first substrate, the portion having a first surface facing a sidewall of the via and a second surface opposite to the first surface, the second surface facing an interior of the via and extending upward along the sidewall; (3) inserting the protruding first contact pads of the first integrated circuit structure into the corresponding vias of the first substrate and attaching the protruding first contact pads of the first integrated circuit structure to the first contact pads of the first substrate.
Claim 3
Dependent Claim
24 words
The method of claim 1 wherein the operation (3) is performed without melting the protruding first contact pads of the first integrated circuit structure.
Claim 4
Dependent Claim
31 words
The method of claim 2 wherein in the operation (3) the first contact pads of the first integrated circuit structure are soldered to the first contact pads of the first substrate.
Claim 5
Dependent Claim
29 words
The method of claim 1 wherein an outer protruding surface of the first contact pads of the first integrated circuit structure is made of copper and/or gold and/or nickel.
Claim 6
Dependent Claim
13 words
The method of claim 1 wherein the first substrate comprises a semiconductor substrate.
Claim 7
Dependent Claim
22 words
The method of claim 1 wherein the first substrate is an integrated circuit packaging substrate which does not comprise a semiconductor substrate.
Claim 8
Dependent Claim
14 words
The method of claim 1 wherein the first substrate is a printed circuit board.
Claim 9
Dependent Claim
21 words
The method of claim 1 wherein in the operation (3) the attachment is performed without solder with thermal or thermosonic compression.
Claim 10
Dependent Claim
33 words
The method of claim 1 wherein after the operation (3) a spacing between the bottom surface of the semiconductor substrate and the top surface of the first substrate is at least 5 μm.
Claim 11
Dependent Claim
31 words
The method of claim 1 wherein at least a portion of the bottom surface of the semiconductor substrate is not covered by any dielectric layer in the first integrated circuit structure.
Claim 12
Dependent Claim
29 words
The method of claim 1 wherein at least a portion of the bottom surface of the semiconductor substrate is covered by a dielectric in the first integrated circuit structure.
Claim 13
Dependent Claim
145 words
A manufacturing method comprising: (1) obtaining a first integrated circuit structure comprising: a semiconductor substrate; one or more first conductive contact pads protruding out at a surface of the first integrated circuit structure; (2) obtaining a first substrate comprising a circuit which comprises one or more first conductive contact pads, wherein at least a portion of each of the one or more first contact pads of the first substrate is located in a corresponding via in a surface of the first substrate; (3) inserting the protruding first contact pads of the first integrated circuit structure into the corresponding vias of the first substrate and attaching the protruding first contact pads of the first integrated circuit structure to the first contact pads of the first substrate; wherein in the operation (3) at least 10 μm of each protruding first contact pad is inside the corresponding via.
Claim 14
Dependent Claim
145 words
A manufacturing method comprising: (1) obtaining a first integrated circuit structure comprising: a semiconductor substrate; one or more first conductive contact pads protruding out at a surface of the first integrated circuit structure; (2) obtaining a first substrate comprising a circuit which comprises one or more first conductive contact pads, wherein at least a portion of each of the one or more first contact pads of the first substrate is located in a corresponding via in a surface of the first substrate; (3) inserting the protruding first contact pads of the first integrated circuit structure into the corresponding vias of the first substrate and attaching the protruding first contact pads of the first integrated circuit structure to the first contact pads of the first substrate; wherein in the operation (3) at least 10 μm of each protruding first contact pad is inside the corresponding via.
Claim 15
Dependent Claim
24 words
The method of claim 1 wherein the first integrated circuit structure is an interposer that comprises no semiconductor circuit elements in the semiconductor substrate.
Claim 16
Dependent Claim
20 words
The method of claim 1 wherein the first integrated circuit structure comprises a semiconductor circuit element in the semiconductor substrate.
Claim 17
Dependent Claim
144 words
A manufacturing method comprising: (1) obtaining a first integrated circuit structure comprising: a semiconductor substrate; one or more first conductive contact pads protruding out at a surface of the first integrated circuit structure; (2) obtaining a first substrate comprising a circuit which comprises one or more first conductive contact pads, wherein at least a portion of each of the one or more first contact pads of the first substrate is located in a corresponding via in a surface of the first substrate; (3) inserting the protruding first contact pads of the first integrated circuit structure into the corresponding vias of the first substrate and attaching the protruding first contact pads of the first integrated circuit structure to the first contact pads of the first substrate; wherein each first contact pad of the first substrate covers a bottom and entire sidewalls of the corresponding via.
Claim 18
Dependent Claim
144 words
A manufacturing method comprising: (1) obtaining a first integrated circuit structure comprising: a semiconductor substrate; one or more first conductive contact pads protruding out at a surface of the first integrated circuit structure; (2) obtaining a first substrate comprising a circuit which comprises one or more first conductive contact pads, wherein at least a portion of each of the one or more first contact pads of the first substrate is located in a corresponding via in a surface of the first substrate; (3) inserting the protruding first contact pads of the first integrated circuit structure into the corresponding vias of the first substrate and attaching the protruding first contact pads of the first integrated circuit structure to the first contact pads of the first substrate; wherein each first contact pad of the first substrate covers a bottom and entire sidewalls of the corresponding via.
Claim 19
Dependent Claim
259 words
A manufacturing method comprising: (1) obtaining a first integrated circuit structure comprising: a semiconductor substrate; one or more first conductive contact pads protruding out at a surface of the first integrated circuit structure; (2) obtaining a first substrate comprising a circuit which comprises one or more first conductive contact pads, wherein at least a portion of each of the one or more first contact pads of the first substrate is located in a corresponding via in a surface of the first substrate; p 1 (3) inserting the protruding first contact pads of the first integrated circuit structure into the corresponding vias of the first substrate and attaching the protruding first contact pads of the first integrated circuit structure to the first contact pads of the first substrate; (4) obtaining a second integrated circuit structure comprising: a semiconductor substrate; one or more first conductive contact pads protruding out at a surface of the second integrated circuit structure; wherein the first integrated circuit structure further comprises one or more second conductive contact pads, wherein at least a portion of each of the one or more second contact pads of the first integrated circuit structure is located in a corresponding via in a surface of the first integrated circuit structure; wherein the method further comprises: (5) inserting the protruding first contact pads of the second integrated circuit structure into the corresponding vias of the first integrated circuit structure and attaching the protruding first contact pads of the second integrated circuit structure to the second contact pads of the first integrated circuit structure.
Claim 20
Dependent Claim
259 words
A manufacturing method comprising: (1) obtaining a first integrated circuit structure comprising: a semiconductor substrate; one or more first conductive contact pads protruding out at a surface of the first integrated circuit structure; (2) obtaining a first substrate comprising a circuit which comprises one or more first conductive contact pads, wherein at least a portion of each of the one or more first contact pads of the first substrate is located in a corresponding via in a surface of the first substrate; p 1 (3) inserting the protruding first contact pads of the first integrated circuit structure into the corresponding vias of the first substrate and attaching the protruding first contact pads of the first integrated circuit structure to the first contact pads of the first substrate; (4) obtaining a second integrated circuit structure comprising: a semiconductor substrate; one or more first conductive contact pads protruding out at a surface of the second integrated circuit structure; wherein the first integrated circuit structure further comprises one or more second conductive contact pads, wherein at least a portion of each of the one or more second contact pads of the first integrated circuit structure is located in a corresponding via in a surface of the first integrated circuit structure; wherein the method further comprises: (5) inserting the protruding first contact pads of the second integrated circuit structure into the corresponding vias of the first integrated circuit structure and attaching the protruding first contact pads of the second integrated circuit structure to the second contact pads of the first integrated circuit structure.
Claim 21
Dependent Claim
60 words
The method of claim 16 wherein the first contact pads of the first integrated circuit structure are located on a first side of the first integrated circuit structure, and the second contact pads of the first integrated circuit structure are located on a second side of the first integrated circuit structure, the first side being opposite to the second side.
Claim 22
Dependent Claim
158 words
A manufacturing method comprising: (1) obtaining a first integrated circuit structure comprising: a semiconductor substrate; one or more first conductive contact pads protruding out at a surface of the first integrated circuit structure; (2) obtaining a first substrate comprising a circuit which comprises one or more first conductive contact pads, wherein at least a portion of each of the one or more first contact pads of the first substrate is located in a corresponding via in a surface of the first substrate; (3) inserting the protruding first contact pads of the first integrated circuit structure into the corresponding vias of the first substrate and attaching the protruding first contact pads of the first integrated circuit structure to the first contact pads of the first substrate; wherein each first contact pad of the first integrated circuit structure is provided by a conductor formed in a corresponding through via in the semiconductor substrate and protruding out of the through via.
Claim 23
Dependent Claim
158 words
A manufacturing method comprising: (1) obtaining a first integrated circuit structure comprising: a semiconductor substrate; one or more first conductive contact pads protruding out at a surface of the first integrated circuit structure; (2) obtaining a first substrate comprising a circuit which comprises one or more first conductive contact pads, wherein at least a portion of each of the one or more first contact pads of the first substrate is located in a corresponding via in a surface of the first substrate; (3) inserting the protruding first contact pads of the first integrated circuit structure into the corresponding vias of the first substrate and attaching the protruding first contact pads of the first integrated circuit structure to the first contact pads of the first substrate; wherein each first contact pad of the first integrated circuit structure is provided by a conductor formed in a corresponding through via in the semiconductor substrate and protruding out of the through via.
Claim 24
Dependent Claim
34 words
The method of claim 18 wherein the first contact pads of the first integrated circuit structure protrude out at the surface which is opposite to an active surface of the first integrated circuit structure.
Claim 25
Dependent Claim
31 words
The method of claim 1 wherein in the operation (3) the first contact pads of the first integrated circuit structure are soldered to the first contact pads of the first substrate.
Claim 26
Dependent Claim
38 words
The method of claim 20 wherein in the operation (3) the first contact pads of the first integrated circuit structure are soldered to the second surfaces of the portions of the first contact pads of the first substrate.
Claim 27
Dependent Claim
47 words
The method of claim 1 wherein in the operation (3) the protruding first contact pads of the first integrated circuit structure are inserted into the corresponding vias deeper than at least tops of the second surfaces of portions of the first contact pads of the first substrate.
Claim 28
Dependent Claim
57 words
The method of claim 1 wherein the operation (2) comprises: forming a dielectric layer which is part of the first substrate, wherein each said via is a via in the dielectric layer; and then forming a conductive layer over the dielectric layer to provide at least said portions of the first contact pads of the first substrate.
Claim 29
Dependent Claim
184 words
A manufacturing method comprising: (1) obtaining a first integrated circuit structure comprising: a semiconductor substrate; one or more first conductive contact pads protruding out at a surface of the first integrated circuit structure; (2) obtaining a first substrate comprising a circuit which comprises one or more first conductive contact pads, wherein at least a portion of each of the one or more first contact pads of the first substrate is located in a corresponding via in a surface of the first substrate, wherein obtaining the first substrate comprises: (2A) forming a dielectric layer which is part of the first substrate, wherein each said via is a via in the dielectric layer; and then (2B) forming a conductive layer on a sidewall of each said via to provide at least a first portion of each first contact pad of the first substrate; (3) inserting the protruding first contact pads of the first integrated circuit structure into the corresponding vias of the first substrate and attaching the protruding first contact pads of the first integrated circuit structure to the first contact pads of the first substrate.
Claim 30
Dependent Claim
184 words
A manufacturing method comprising: (1) obtaining a first integrated circuit structure comprising: a semiconductor substrate; one or more first conductive contact pads protruding out at a surface of the first integrated circuit structure; (2) obtaining a first substrate comprising a circuit which comprises one or more first conductive contact pads, wherein at least a portion of each of the one or more first contact pads of the first substrate is located in a corresponding via in a surface of the first substrate, wherein obtaining the first substrate comprises: (2A) forming a dielectric layer which is part of the first substrate, wherein each said via is a via in the dielectric layer; and then (2B) forming a conductive layer on a sidewall of each said via to provide at least a first portion of each first contact pad of the first substrate; (3) inserting the protruding first contact pads of the first integrated circuit structure into the corresponding vias of the first substrate and attaching the protruding first contact pads of the first integrated circuit structure to the first contact pads of the first substrate.
Claim 31
Dependent Claim
22 words
The method of claim 24 wherein each first contact pad of the first substrate comprises a second portion formed before operation (2A).
Claim 32
Dependent Claim
22 words
The method of claim 24 wherein each first contact pad of the first substrate comprises a second portion underlying the dielectric layer.
Claim 33
Dependent Claim
29 words
The method of claim 24 wherein each first contact pad of the first substrate comprises a portion provided by said conductive layer on a bottom of the corresponding via.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2010-07-09 | 2011-01-08 | 2011-07-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2014-07-09 | 2015-01-08 | 2015-07-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2018-07-09 | 2019-01-08 | 2019-07-10 | $7700.00 | Window Closed / Lapsed |