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Patent US7098131B2 successfully refreshed from Google Patents.
US7098131B2
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Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
Assignee: Samsung Electronics Co Ltd
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Filing: 2004-05-28
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Granted: 2006-08-29
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Expires: 2024-05-28
Abstract
Abstract Atomic layers can be formed by introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative has a formula: Ta(NR 1 )(NR 2 R 3 ) 3 , wherein R 1 , R 2 and R 3 are each independently H or a C 1 –C 6 alkyl functional group, chemisorbing a portion of the reactant on the substrate, removing non-chemisorbed reactant from the substrate and introducing a reacting gas onto the substrate to form a solid material on the substrate. Thin films comprising tantalum nitride (TaN) are also provided.
Inventors
- 👤 Sang-Bom Kang
- 👤 Byung-hee Kim
- 👤 Kyung-In Choi
- 👤 Gil-heyun Choi
- 👤 You-Kyoung Lee
- 👤 Seong-Geon Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:51
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45553; C23C16/22; C23C16/30; C23C16/34; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
99 words
A method of forming an atomic layer comprising: introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative comprises tertiary amyl imido-tris-dimethylamido tantalum (Ta(NC(CH 3 ) 2 C 2 H 5 (N(CH 3 ) 2 ) 3 ; chemisorbing a portion of the reactant on the substrate; removing non-chemisorbed reactant from the substrate; and introducing a reacting gas onto the substrate to form a solid material on the substrate, wherein the method is carried out by a thermal atomic layer deposition (ALD) process or a radical assisted atomic layer deposition (RAALD) process using remote plasma.
Claim 2
Independent Claim
99 words
A method of forming an atomic layer comprising: introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative comprises tertiary amyl imido-tris-dimethylamido tantalum (Ta(NC(CH 3 ) 2 C 2 H 5 (N(CH 3 ) 2 ) 3 ; chemisorbing a portion of the reactant on the substrate; removing non-chemisorbed reactant from the substrate; and introducing a reacting gas onto the substrate to form a solid material on the substrate, wherein the method is carried out by a thermal atomic layer deposition (ALD) process or a radical assisted atomic layer deposition (RAALD) process using remote plasma.
Claim 3
Dependent Claim
15 words
The method of claim 1 , wherein the reactant is provided in a liquid state.
Claim 4
Dependent Claim
13 words
The method of claim 1 , wherein the reactant excludes a halogen component.
Claim 5
Dependent Claim
16 words
The method of claim 1 , wherein the non-chemisorbed reactant is removed using an inert gas.
Claim 6
Dependent Claim
23 words
The method of claim 4 , wherein the inert gas comprises argon (Ar), helium (He), nitrogen (N 2 ) or a combination thereof.
Claim 7
Dependent Claim
33 words
The method of claim 1 , wherein the reacting gas comprises hydrogen (H 2 ), ammonia (NH 3 ), silane (SiH 4 ) disilane (Si 2 H 6 ) or a combination thereof.
Claim 8
Dependent Claim
34 words
The method of claim 1 , wherein the reacting gas comprises activated hydrogen (H 2 ), activated ammonia (NH 3 ). activated silane (SiH 4 ) or activated disilane (Si 2 H 6 ).
Claim 9
Dependent Claim
18 words
The method of claim 7 , wherein the activated reacting gas is obtained by a remote plasma process.
Claim 10
Dependent Claim
18 words
The method of claim 1 , wherein the reacting gas removes a ligand-bonded element from the chemisorbed reactant.
Claim 11
Dependent Claim
14 words
The method of claim 1 , wherein the solid material comprises tantalum nitride (TaN).
Claim 12
Dependent Claim
23 words
The method of claim 1 , wherein the method is carried out at a temperature of about 100° C. to about 350° C.
Claim 13
Independent Claim
102 words
A method of forming a thin film comprising: (a) introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative comprises tertiary amyl imido-tris-dimethylamido tantalum (Ta(NC(CH 3 ) 2 C 2 H 5 (N(CH 3 ) 2 ) 3 ); (b) chemisorbing a portion of the reactant on the substrate; (c) removing non-chemisorbed reactant from the substrate; (d) introducing a reacting gas onto the substrate to form a solid material including tantalum nitride (TaN) on the substrate; and (e) repeating steps (a) to (d) at least once to form a tantalum nitride (TaN) thin film including the solid material.
Claim 14
Independent Claim
102 words
A method of forming a thin film comprising: (a) introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative comprises tertiary amyl imido-tris-dimethylamido tantalum (Ta(NC(CH 3 ) 2 C 2 H 5 (N(CH 3 ) 2 ) 3 ); (b) chemisorbing a portion of the reactant on the substrate; (c) removing non-chemisorbed reactant from the substrate; (d) introducing a reacting gas onto the substrate to form a solid material including tantalum nitride (TaN) on the substrate; and (e) repeating steps (a) to (d) at least once to form a tantalum nitride (TaN) thin film including the solid material.
Claim 15
Dependent Claim
16 words
The method of claim 12 , wherein the steps are repeated at least once in sequence.
Claim 16
Dependent Claim
13 words
The method of claim 12 , wherein the reactant excludes a halogen component.
Claim 17
Dependent Claim
33 words
The method of claim 12 , wherein the reacting gas comprises hydrogen (H 2 ), ammonia (NH 3 ), silane (SH 4 ), disilane (Si 2 H 6 ) or a combination thereof.
Claim 18
Dependent Claim
22 words
The method of claim 12 , wherein the method is performed at a temperature of about 100° C. to about 350° C.
Claim 19
Dependent Claim
29 words
The method of claim 12 , wherein the non-chemisorbed reactant is removed using an inert gas comprising argon (Ar), helium (He), nitrogen (N 2 ) or a combination thereof.
Claim 20
Independent Claim
135 words
A method of forming a thin film comprising: (a) forming an insulating layer on a substrate including therein an opening exposing a surface portion of the substrate; (b) introducing a tantalum amine derivative as a reactant onto the insulating layer having the opening, wherein the tantalum amine derivative comprises tertiary amyl imido-tris-dimethylamido tantalum (Ta(NC(CH 3 ) 2 C 2 H 5 (N(CH 3 ) 2 ) 3 ); (c) chemisorbing a portion of the reactant on the insulating layer having the opening: (d) removing non-chemisorbed reactant from the insulating layer having the opening; (e) introducing a reacting gas onto the substrate to form a solid material including tantalum nitride (TaN); and (f) repeating steps (b) to (e) at least once to form a tantalum nitride (TaN) thin film on the insulating layer having the opening.
Claim 21
Independent Claim
135 words
A method of forming a thin film comprising: (a) forming an insulating layer on a substrate including therein an opening exposing a surface portion of the substrate; (b) introducing a tantalum amine derivative as a reactant onto the insulating layer having the opening, wherein the tantalum amine derivative comprises tertiary amyl imido-tris-dimethylamido tantalum (Ta(NC(CH 3 ) 2 C 2 H 5 (N(CH 3 ) 2 ) 3 ); (c) chemisorbing a portion of the reactant on the insulating layer having the opening: (d) removing non-chemisorbed reactant from the insulating layer having the opening; (e) introducing a reacting gas onto the substrate to form a solid material including tantalum nitride (TaN); and (f) repeating steps (b) to (e) at least once to form a tantalum nitride (TaN) thin film on the insulating layer having the opening.
Claim 22
Dependent Claim
17 words
The method claim 18 , wherein the reacting gas removes a ligand-bonded element from the chemisorbed reactant.
Claim 23
Dependent Claim
16 words
The method of claim 18 , wherein the steps are repeated at least once in sequence.
Claim 24
Dependent Claim
13 words
The method of claim 18 , wherein the reactant excludes a halogen component.
Claim 25
Dependent Claim
33 words
The method of claim 18 , wherein the reacting gas comprises hydrogen (H 2 ), ammonia (NH 3 ), silane (SiH 4 ), disilane (Si 2 H 6 ) or a combination thereof.
Claim 26
Dependent Claim
23 words
The method of claim 18 , wherein the method is carried out at a temperature of about 100° C. to about 350° C.
Claim 27
Dependent Claim
29 words
The method of claim 18 , wherein the non-chemisorbed reactant is removed using an inert gas comprising argon (Ar), helium (He), nitrogen (N 2 ) or a combination thereof.
Claim 28
Dependent Claim
17 words
The method of claim 18 , wherein an aspect ratio of the opening is above about 10:1.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2009-08-28 | 2010-02-27 | 2010-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2013-08-28 | 2014-02-27 | 2014-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2017-08-28 | 2018-02-27 | 2018-08-29 | $7700.00 | Window Closed / Lapsed |