US7098131B2
Expired / Lapsed
US
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Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
Assignee: Samsung Electronics Co Ltd
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Filing: 2004-05-28
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Granted: 2006-08-29
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Expires: 2024-05-28
Abstract
Abstract Atomic layers can be formed by introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative has a formula: Ta(NR 1 )(NR 2 R 3 ) 3 , wherein R 1 , R 2 and R 3 are each independently H or a C 1 –C 6 alkyl functional group, chemisorbing a portion of the reactant on the substrate, removing non-chemisorbed reactant from the substrate and introducing a reacting gas onto the substrate to form a solid material on the substrate. Thin films comprising tantalum nitride (TaN) are also provided.
Inventors
- 👤 Sang-Bom Kang
- 👤 Byung-hee Kim
- 👤 Kyung-In Choi
- 👤 Gil-heyun Choi
- 👤 You-Kyoung Lee
- 👤 Seong-Geon Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:34
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45553; C23C16/22; C23C16/30; C23C16/34; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
99 words
A method of forming an atomic layer comprising: introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative comprises tertiary amyl imido-tris-dimethylamido tantalum (Ta(NC(CH 3 ) 2 C 2 H 5 (N(CH 3 ) 2 ) 3 ; chemisorbing a portion of the reactant on the substrate; removing non-chemisorbed reactant from the substrate; and introducing a reacting gas onto the substrate to form a solid material on the substrate, wherein the method is carried out by a thermal atomic layer deposition (ALD) process or a radical assisted atomic layer deposition (RAALD) process using remote plasma.
Claim 2
Independent Claim
99 words
A method of forming an atomic layer comprising: introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative comprises tertiary amyl imido-tris-dimethylamido tantalum (Ta(NC(CH 3 ) 2 C 2 H 5 (N(CH 3 ) 2 ) 3 ; chemisorbing a portion of the reactant on the substrate; removing non-chemisorbed reactant from the substrate; and introducing a reacting gas onto the substrate to form a solid material on the substrate, wherein the method is carried out by a thermal atomic layer deposition (ALD) process or a radical assisted atomic layer deposition (RAALD) process using remote plasma.
Claim 3
Dependent Claim
15 words
The method of claim 1 , wherein the reactant is provided in a liquid state.
Claim 4
Dependent Claim
13 words
The method of claim 1 , wherein the reactant excludes a halogen component.
Claim 5
Dependent Claim
16 words
The method of claim 1 , wherein the non-chemisorbed reactant is removed using an inert gas.
Claim 6
Dependent Claim
23 words
The method of claim 4 , wherein the inert gas comprises argon (Ar), helium (He), nitrogen (N 2 ) or a combination thereof.
Claim 7
Dependent Claim
33 words
The method of claim 1 , wherein the reacting gas comprises hydrogen (H 2 ), ammonia (NH 3 ), silane (SiH 4 ) disilane (Si 2 H 6 ) or a combination thereof.
Claim 8
Dependent Claim
34 words
The method of claim 1 , wherein the reacting gas comprises activated hydrogen (H 2 ), activated ammonia (NH 3 ). activated silane (SiH 4 ) or activated disilane (Si 2 H 6 ).
Claim 9
Dependent Claim
18 words
The method of claim 7 , wherein the activated reacting gas is obtained by a remote plasma process.
Claim 10
Dependent Claim
18 words
The method of claim 1 , wherein the reacting gas removes a ligand-bonded element from the chemisorbed reactant.
Claim 11
Dependent Claim
14 words
The method of claim 1 , wherein the solid material comprises tantalum nitride (TaN).
Claim 12
Dependent Claim
23 words
The method of claim 1 , wherein the method is carried out at a temperature of about 100° C. to about 350° C.
Claim 13
Independent Claim
102 words
A method of forming a thin film comprising: (a) introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative comprises tertiary amyl imido-tris-dimethylamido tantalum (Ta(NC(CH 3 ) 2 C 2 H 5 (N(CH 3 ) 2 ) 3 ); (b) chemisorbing a portion of the reactant on the substrate; (c) removing non-chemisorbed reactant from the substrate; (d) introducing a reacting gas onto the substrate to form a solid material including tantalum nitride (TaN) on the substrate; and (e) repeating steps (a) to (d) at least once to form a tantalum nitride (TaN) thin film including the solid material.
Claim 14
Independent Claim
102 words
A method of forming a thin film comprising: (a) introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative comprises tertiary amyl imido-tris-dimethylamido tantalum (Ta(NC(CH 3 ) 2 C 2 H 5 (N(CH 3 ) 2 ) 3 ); (b) chemisorbing a portion of the reactant on the substrate; (c) removing non-chemisorbed reactant from the substrate; (d) introducing a reacting gas onto the substrate to form a solid material including tantalum nitride (TaN) on the substrate; and (e) repeating steps (a) to (d) at least once to form a tantalum nitride (TaN) thin film including the solid material.
Claim 15
Dependent Claim
16 words
The method of claim 12 , wherein the steps are repeated at least once in sequence.
Claim 16
Dependent Claim
13 words
The method of claim 12 , wherein the reactant excludes a halogen component.
Claim 17
Dependent Claim
33 words
The method of claim 12 , wherein the reacting gas comprises hydrogen (H 2 ), ammonia (NH 3 ), silane (SH 4 ), disilane (Si 2 H 6 ) or a combination thereof.
Claim 18
Dependent Claim
22 words
The method of claim 12 , wherein the method is performed at a temperature of about 100° C. to about 350° C.
Claim 19
Dependent Claim
29 words
The method of claim 12 , wherein the non-chemisorbed reactant is removed using an inert gas comprising argon (Ar), helium (He), nitrogen (N 2 ) or a combination thereof.
Claim 20
Independent Claim
135 words
A method of forming a thin film comprising: (a) forming an insulating layer on a substrate including therein an opening exposing a surface portion of the substrate; (b) introducing a tantalum amine derivative as a reactant onto the insulating layer having the opening, wherein the tantalum amine derivative comprises tertiary amyl imido-tris-dimethylamido tantalum (Ta(NC(CH 3 ) 2 C 2 H 5 (N(CH 3 ) 2 ) 3 ); (c) chemisorbing a portion of the reactant on the insulating layer having the opening: (d) removing non-chemisorbed reactant from the insulating layer having the opening; (e) introducing a reacting gas onto the substrate to form a solid material including tantalum nitride (TaN); and (f) repeating steps (b) to (e) at least once to form a tantalum nitride (TaN) thin film on the insulating layer having the opening.
Claim 21
Independent Claim
135 words
A method of forming a thin film comprising: (a) forming an insulating layer on a substrate including therein an opening exposing a surface portion of the substrate; (b) introducing a tantalum amine derivative as a reactant onto the insulating layer having the opening, wherein the tantalum amine derivative comprises tertiary amyl imido-tris-dimethylamido tantalum (Ta(NC(CH 3 ) 2 C 2 H 5 (N(CH 3 ) 2 ) 3 ); (c) chemisorbing a portion of the reactant on the insulating layer having the opening: (d) removing non-chemisorbed reactant from the insulating layer having the opening; (e) introducing a reacting gas onto the substrate to form a solid material including tantalum nitride (TaN); and (f) repeating steps (b) to (e) at least once to form a tantalum nitride (TaN) thin film on the insulating layer having the opening.
Claim 22
Dependent Claim
17 words
The method claim 18 , wherein the reacting gas removes a ligand-bonded element from the chemisorbed reactant.
Claim 23
Dependent Claim
16 words
The method of claim 18 , wherein the steps are repeated at least once in sequence.
Claim 24
Dependent Claim
13 words
The method of claim 18 , wherein the reactant excludes a halogen component.
Claim 25
Dependent Claim
33 words
The method of claim 18 , wherein the reacting gas comprises hydrogen (H 2 ), ammonia (NH 3 ), silane (SiH 4 ), disilane (Si 2 H 6 ) or a combination thereof.
Claim 26
Dependent Claim
23 words
The method of claim 18 , wherein the method is carried out at a temperature of about 100° C. to about 350° C.
Claim 27
Dependent Claim
29 words
The method of claim 18 , wherein the non-chemisorbed reactant is removed using an inert gas comprising argon (Ar), helium (He), nitrogen (N 2 ) or a combination thereof.
Claim 28
Dependent Claim
17 words
The method of claim 18 , wherein an aspect ratio of the opening is above about 10:1.
References Cited (Backward Citations)
US5668054A
Cited
US6153519A
Cited
US6319567B1
Cited
US6204204B1
Cited
US6203613B1
Cited
US20030027431A1
Cited
US6482733B2
Cited
US20020104481A1
Cited
US20020076490A1
Cited
JP2002193981A
Cited
US6593484B2
Cited
US20020182320A1
Cited
US20030017697A1
Cited
KR20030009093A
Cited
US20030072975A1
Cited
US6653199B2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2009-08-28 | 2010-02-27 | 2010-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2013-08-28 | 2014-02-27 | 2014-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2017-08-28 | 2018-02-27 | 2018-08-29 | $7700.00 | Window Closed / Lapsed |