US7088186B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
High-frequency power amplifier module
Assignee: Toshiba Corp
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Filing: 2005-02-18
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Granted: 2006-08-08
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Expires: 2025-02-18
Abstract
Abstract A ground layer is provided between a first and a second wiring layer. A first transistor provided at the first wiring layer amplifies a supplied high-frequency signal. A second transistor provided at the first wiring layer amplifies the output signal of the first transistor. A first power supply line, which supplies power to the first transistor, is provided at the first wiring layer. A second power supply line, which supplies power to the second transistor, is provided at the second wiring layer.
Inventors
- 👤 Masayuki Sugiura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 13:58
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/20; H10W40/22; H10W40/226; H10W40/228; H03; H03F; H03F3/00; H03F3/189; H10W44/00; H10W44/20; H10W72/00; H10W44/226; H10W44/231; H10W72/50; H10W72/541; H10W72/5445; H10W72/5449; H10W72/551; H10W72/552; H10W72/5522; H10W90/00; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
113 words
A high-frequency power amplifier comprising: a substrate including at least a first and a second wiring layer and at least one ground layer provided between the first and second wiring layers; a first transistor which is provided at the first wiring layer and which amplifies a supplied high-frequency signal; a second transistor which is provided at the first wiring layer and which amplifies the output signal of the first transistor; a first power supply line which supplies power to the first transistor and which is provided at the first wiring layer; and a second power supply line which supplies power to the second transistor and which is provided at the second wiring layer.
Claim 2
Dependent Claim
113 words
A high-frequency power amplifier comprising: a substrate including at least a first and a second wiring layer and at least one ground layer provided between the first and second wiring layers; a first transistor which is provided at the first wiring layer and which amplifies a supplied high-frequency signal; a second transistor which is provided at the first wiring layer and which amplifies the output signal of the first transistor; a first power supply line which supplies power to the first transistor and which is provided at the first wiring layer; and a second power supply line which supplies power to the second transistor and which is provided at the second wiring layer.
Claim 3
Dependent Claim
27 words
The high-frequency power amplifier according to claim 1 , wherein most of the surface of said at least one ground layer is covered with a conducting film.
Claim 4
Dependent Claim
32 words
The high-frequency power amplifier according to claim 1 , further comprising a signal line which directs the high-frequency signal to the first transistor and which is formed at the second wiring layer.
Claim 5
Dependent Claim
45 words
The high-frequency power amplifier according to claim 3 , further comprising an input matching circuit which is connected between the signal line and the first transistor, the input matching circuit being formed on the first wiring layer and apart from the first power supply line.
Claim 6
Dependent Claim
45 words
The high-frequency power amplifier according to claim 1 , further comprising an output matching circuit which is connected to the output terminal of the second transistor, the output matching circuit being formed on the first wiring layer and apart from the first power supply line.
Claim 7
Dependent Claim
114 words
A high-frequency power amplifier comprising: a substrate including at least a first, a second, and a third wiring layer and a first ground layer provided between the second and third wiring layers; a first transistor which is provided at the first wiring layer and which amplifies a supplied high-frequency signal; a second transistor which is provided at the first wiring layer and which amplifies the output signal of the first transistor; a first power supply line which supplies power to the first transistor and which is provided at the third wiring layer; and a second power supply line which supplies power to the second transistor and which is provided at the second wiring layer.
Claim 8
Dependent Claim
114 words
A high-frequency power amplifier comprising: a substrate including at least a first, a second, and a third wiring layer and a first ground layer provided between the second and third wiring layers; a first transistor which is provided at the first wiring layer and which amplifies a supplied high-frequency signal; a second transistor which is provided at the first wiring layer and which amplifies the output signal of the first transistor; a first power supply line which supplies power to the first transistor and which is provided at the third wiring layer; and a second power supply line which supplies power to the second transistor and which is provided at the second wiring layer.
Claim 9
Dependent Claim
25 words
The high-frequency power amplifier according to claim 6 , wherein most of the surface of said first ground layer is covered with a conducting film.
Claim 10
Dependent Claim
32 words
The high-frequency power amplifier according to claim 6 , further comprises a signal line which directs the high-frequency signal to the first transistor and which is formed at the second wiring layer.
Claim 11
Dependent Claim
59 words
The high-frequency power amplifier according to claim 6 , further comprising: an input matching circuit which is connected between the first transmitter and a signal line directing the high-frequency signal to the first transistor and which is formed at the first wiring layer; and a second ground layer provided between the first wiring layer and the second wiring layer.
Claim 12
Dependent Claim
53 words
The high-frequency power amplifier according to claim 6 , further comprising: an output matching circuit which is connected to the output terminal of the second transistor and which is formed at the first wiring layer; and the second ground layer which is disposed between the first wiring layer and the second wiring layer.
Claim 13
Dependent Claim
110 words
A high-frequency power amplifier comprising: a substrate including a first and a second wiring layer and a first ground layer provided between the first and second wiring layers; a first transistor which is provided at the first wiring layer and which amplifies a supplied high-frequency signal; a second transistor which is provided at the first wiring layer and which amplifies the output signal of the first transistor; a first power supply line which supplies power to the first transistor and which is provided at the first wiring layer; and a second power supply line which supplies power to the second transistor and which is provided at the second wiring layer.
Claim 14
Dependent Claim
110 words
A high-frequency power amplifier comprising: a substrate including a first and a second wiring layer and a first ground layer provided between the first and second wiring layers; a first transistor which is provided at the first wiring layer and which amplifies a supplied high-frequency signal; a second transistor which is provided at the first wiring layer and which amplifies the output signal of the first transistor; a first power supply line which supplies power to the first transistor and which is provided at the first wiring layer; and a second power supply line which supplies power to the second transistor and which is provided at the second wiring layer.
Claim 15
Dependent Claim
25 words
The high-frequency power amplifier according to claim 11 , wherein most of the surface of the first ground layer is covered with a conducting film.
Claim 16
Dependent Claim
32 words
The high-frequency power amplifier according to claim 11 , further comprising a signal line which directs a high-frequency signal to the first transistor and which is formed at the second wiring layer.
Claim 17
Dependent Claim
45 words
The high-frequency power amplifier according to claim 13 , further comprising an input matching circuit which is connected between the signal line and the first transistor, the input matching circuit being formed at the first wiring layer and apart from the first power supply line.
Claim 18
Dependent Claim
45 words
The high-frequency power amplifier according to claim 11 , further comprising an output matching circuit which is connected to the output terminal of the second transistor, the output matching circuit being formed at the first wiring layer and apart from the first power supply line.
Claim 19
Dependent Claim
134 words
A high-frequency power amplifier comprising: a substrate including a first, a second, and a third wiring layer and a first and a second ground layer, the first ground layer being provided between the first and second wiring layers and the second ground layer being provided between the second and third wiring layers; a first transistor which is provided at the first wiring layer and which amplifies a supplied high-frequency signal; a second transistor which is provided at the first wiring layer and which amplifies the output signal of the first transistor; a first power supply line which supplies power to the first transistor and which is provided at the third wiring layer; and a second power supply line which supplies power to the second transistor and which is provided at the second wiring layer.
Claim 20
Dependent Claim
134 words
A high-frequency power amplifier comprising: a substrate including a first, a second, and a third wiring layer and a first and a second ground layer, the first ground layer being provided between the first and second wiring layers and the second ground layer being provided between the second and third wiring layers; a first transistor which is provided at the first wiring layer and which amplifies a supplied high-frequency signal; a second transistor which is provided at the first wiring layer and which amplifies the output signal of the first transistor; a first power supply line which supplies power to the first transistor and which is provided at the third wiring layer; and a second power supply line which supplies power to the second transistor and which is provided at the second wiring layer.
Claim 21
Dependent Claim
27 words
The high-frequency power amplifier according to claim 16 , wherein most of the surfaces of the first and second ground layers are covered with a conducting film.
Claim 22
Dependent Claim
32 words
The high-frequency power amplifier according to claim 16 , further comprises a signal line which directs a high-frequency signal to the first transistor and which is formed at the second wiring layer.
Claim 23
Dependent Claim
43 words
The high-frequency power amplifier according to claim 16 , further comprising an input matching circuit which is connected between the first transmitter and a signal line directing the high-frequency signal to the first transistor and which is formed at the first wiring layer.
Claim 24
Dependent Claim
35 words
The high-frequency power amplifier according to claim 16 , further comprising an output matching circuit which is connected to the output terminal of the second transistor and which is formed at the first wiring layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2009-08-07 | 2010-02-06 | 2010-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2013-08-07 | 2014-02-06 | 2014-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2017-08-07 | 2018-02-06 | 2018-08-08 | $7700.00 | Window Closed / Lapsed |