Patent US7074703B2 successfully refreshed from Google Patents.
US7074703B2
Expired / Lapsed
US
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Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument
Assignee: Advanced Interconnect Systems Ltd
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Filing: 2004-06-08
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Granted: 2006-07-11
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Expires: 2024-06-08
Abstract
Abstract A method of manufacturing a semiconductor device includes: (a) forming a first resin layer on a first surface of a semiconductor substrate, an integrated circuit being formed in the first surface of the semiconductor substrate; (b) forming a through-hole electrode including a projecting section which projects from a second surface opposite to the first surface by removing a part of the semiconductor substrate from the second surface so as to thin the semiconductor substrate; and (c) forming a second resin layer on the second surface of the semiconductor substrate so as to avoid the projecting section.
Inventors
- 👤 Motohiko Fukazawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:40
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/021; H10W20/023; H10W20/0238; H10W20/0245; H10W20/0249; H10W90/00; H10W72/00; H10W72/20; H10W72/221; H10W72/241; H10W72/244; H10W72/247; H10W72/248; H10W72/90; H10W72/921; H10W72/922; H10W72/9226; H10W72/923; H10W72/931; H10W72/934; H10W72/941; H10W72/942; H10W72/951; H10W72/952; H10W90/20; H10W90/297; H10W90/701; H10W90/721; H10W90/722
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
147 words
A method of manufacturing a semiconductor device, comprising: (a) forming a first resin layer on a first surface of a semiconductor substrate, the semiconductor substrate having an integrated circuit being formed in the first surface and an electrode formed on the first surface, the electrode being electrically connected to the integrated circuit; (b) forming a through-hole in the electrode, forming a recess section in the semiconductor substrate, forming a through-hole electrode in the through-hole and the recess section, and then removing a part of the semiconductor substrate from a second surface opposite to the first surface to thin the semiconductor substrate such that the through-hole electrode has a second projecting section which projects from the second surface; and (c) forming a second resin layer on the second surface of the semiconductor substrate with at least a part of a surface of the second projecting section being exposed.
Claim 2
Independent Claim
147 words
A method of manufacturing a semiconductor device, comprising: (a) forming a first resin layer on a first surface of a semiconductor substrate, the semiconductor substrate having an integrated circuit being formed in the first surface and an electrode formed on the first surface, the electrode being electrically connected to the integrated circuit; (b) forming a through-hole in the electrode, forming a recess section in the semiconductor substrate, forming a through-hole electrode in the through-hole and the recess section, and then removing a part of the semiconductor substrate from a second surface opposite to the first surface to thin the semiconductor substrate such that the through-hole electrode has a second projecting section which projects from the second surface; and (c) forming a second resin layer on the second surface of the semiconductor substrate with at least a part of a surface of the second projecting section being exposed.
Claim 3
Dependent Claim
48 words
The method of manufacturing a semiconductor device as defined in claim 1 , wherein the through-hole electrode includes a first projecting section which projects from the first surface, and wherein, in the step (a), the first resin layer is formed to be lower than the first projecting section.
Claim 4
Dependent Claim
53 words
The method of manufacturing a semiconductor device as defined in claim 1 , wherein the through-hole electrode includes a first projecting section which projects from the first surface, and wherein, in the step (a), the first resin layer is formed to have a height equal to a height of the first projecting section.
Claim 5
Dependent Claim
40 words
The method of manufacturing a semiconductor device as defined in claim 1 , wherein the step (b) is performed in a state in which a reinforcement member is provided on a side of the first surface of the semiconductor substrate.
Claim 6
Dependent Claim
32 words
The method of manufacturing a semiconductor device as defined in claim 1 , wherein, in the step (c), the second resin layer is formed to be lower than the second projecting section.
Claim 7
Dependent Claim
51 words
The method of manufacturing a semiconductor device as defined in claim 1 , wherein a plurality of the integrated circuits are formed in the semiconductor substrate, and the through-hole electrode is formed corresponding to each of the integrated circuits, the method further comprising cutting the semiconductor substrate along a cutting region.
Claim 8
Dependent Claim
38 words
The method of manufacturing a semiconductor device as defined in claim 6 , wherein, in the step (a), the first resin layer is formed to avoid at least a part of the cutting region of the semiconductor substrate.
Claim 9
Dependent Claim
38 words
The method of manufacturing a semiconductor device as defined in claim 6 , wherein, in the step (c), the second resin layer is formed to avoid at least a part of the cutting region of the semiconductor substrate.
Claim 10
Dependent Claim
50 words
The method of manufacturing a semiconductor device as defined in claim 1 , further comprising: stacking a plurality of the semiconductor substrates for which the steps (a) to (c) have been completed, and electrically connecting adjacent semiconductor substrates among the stacked semiconductor substrates with each other through the through-hole electrode.
Claim 11
Dependent Claim
26 words
The method of manufacturing a semiconductor device as defined in claim 9 , further comprising: filling a resin into a space between the adjacent semiconductor substrates.
Claim 12
Dependent Claim
29 words
The method of manufacturing a semiconductor device as defined in claim 10 , wherein the first and second resin layers and the resin are formed of the same material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2009-07-10 | 2010-01-09 | 2010-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2013-07-10 | 2014-01-09 | 2014-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2017-07-10 | 2018-01-09 | 2018-07-11 | $7700.00 | Window Closed / Lapsed |