Patent US7057244B2 successfully refreshed from Google Patents.
US7057244B2
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US
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Dielectric materials
Assignee: International Business Machines Corp
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Filing: 2003-07-21
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Granted: 2006-06-06
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Expires: 2023-07-21
Abstract
Abstract An article of manufacture comprises a substrate and a layer of N (x) Y (1−x) AlO 3 on the substrate where x is a molar fraction greater than zero and less than one, and N is an element selected from La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. The article may be an electronic device further comprising an electrode electrically isolated from the substrate by the layer. In particular, the dielectric properties of the layer are such that the layer is especially although by no means exclusively useful for electrically isolating gate electrodes in field effect transistor devices. The layer may be formed on the substrate via molecular beam epitaxy.
Inventors
- 👤 Wanda Andreoni
- 👤 Alessandro Curioni
- 👤 Stephen A. Shevlin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:53
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6332; H10P14/6939; H10P14/69396
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
67 words
Article of manufacture comprising a substrate and a layer of N (x) Y (1−x) AlO 3 on the substrate where x is a molar fraction greater than zero and less than one, and N is an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; and said layer has a rhombohedral perovskite structure.
Claim 2
Dependent Claim
67 words
Article of manufacture comprising a substrate and a layer of N (x) Y (1−x) AlO 3 on the substrate where x is a molar fraction greater than zero and less than one, and N is an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; and said layer has a rhombohedral perovskite structure.
Claim 3
Dependent Claim
11 words
Article as claimed in claim 1 , wherein N comprises La.
Claim 4
Dependent Claim
23 words
Article as claimed in claim 1 , wherein said layer has an average dielectric constant value in the range between 15 and 35.
Claim 5
Dependent Claim
13 words
Article as claimed in claim 2 , wherein x is greater than 0.07.
Claim 6
Dependent Claim
13 words
Article as claimed in claim 4 , wherein x is less than 0.4.
Claim 7
Dependent Claim
19 words
Article as claimed in claim 1 , further comprising an electrode electrically isolated from said substrate by said layer.
Claim 8
Dependent Claim
11 words
Electronic device comprising an article as claimed in claim 6 .
Claim 9
Dependent Claim
25 words
Field effect transistor device comprising an article as claimed in claim 6 , wherein said electrode is the gate of a field effect transistor device.
Claim 10
Dependent Claim
76 words
Method of manufacturing an article of manufacture comprising the steps of selecting a substrate and forming a layer of N (x) Y (1−x) AlO 3 on said substrate where x is a molar fraction greater than zero and less than one, and N is an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; and said layer has a rhombohedral perovskite structure.
Claim 11
Dependent Claim
76 words
Method of manufacturing an article of manufacture comprising the steps of selecting a substrate and forming a layer of N (x) Y (1−x) AlO 3 on said substrate where x is a molar fraction greater than zero and less than one, and N is an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; and said layer has a rhombohedral perovskite structure.
Claim 12
Dependent Claim
21 words
Method of claim 9 , wherein said step of forming includes the step of forming said layer by molecular beam epitaxy.
Claim 13
Dependent Claim
32 words
Article of manufacture comprising a substrate and a layer of La (x) Y (1−x) AlO 3 on the substrate where x is a molar fraction greater than zero and less than one.
Claim 14
Dependent Claim
32 words
Article of manufacture comprising a substrate and a layer of La (x) Y (1−x) AlO 3 on the substrate where x is a molar fraction greater than zero and less than one.
Claim 15
Dependent Claim
15 words
Article as claimed in claim 11 , wherein said layer has a rhombohedral perovskite structure.
Claim 16
Dependent Claim
23 words
Article as claimed in claim 11 , wherein said layer has an average dielectric constant value in the range between 15 and 35.
Claim 17
Dependent Claim
13 words
Article as claimed in claim 11 , wherein x is greater than 0.07.
Claim 18
Dependent Claim
13 words
Article as claimed in claim 11 , wherein x is less than 0.4.
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