Semiconductor apparatus having a built-in-electric coil and a method of making the semiconductor apparatus

Claim 2

A semiconductor device, comprising: a semiconductor substrate covered with a base insulating film; a lower insulating layer coated on the base insulating film; a plurality of lower conductive film strips, formed over said lower insulating layer, and arranged in a pattern closely adjacent and parallel to one another in a line width orientation, every adjacent two of the lower conductive film strips being electrically separated from each other; an inter-layer insulating layer formed on the lower insulating layer and the plurality of lower conductive film strips; a plurality of implanted conductive members implanted in a plurality of connection holes formed in the inter-layer insulating layer at positions corresponding to both edge sides of the plurality of the lower conductive film strips; and a plurality of upper conductive film strips formed on the plurality of implanted conductive members and the inter-layer insulating layer to connect an edge side of each one of the plurality of the lower conductive film strips to an opposite edge side of adjacent one of the plurality of the lower conductive film strips through each one of the plurality of the implanted conductive members so that the plurality of lower conductive film strips are connected in series, wherein the plurality of lower conductive film strips, the plurality of implanted conductive members, and the plurality of upper conductive film strips form an electric coil.

Claim 3

A semiconductor device as defined in claim 1 , wherein the inter-layer insulating layer is a multi-layered film including at least different two insulating layers, the semiconductor device further comprising a magnetic member formed in the inter-layer insulating layer to an extent of a length covering the plurality of lower conductive film strips.

Claim 4

A semiconductor device as defined in claim 1 , wherein the plurality of lower conductive film strips, the plurality of implanted conductive members, and the plurality of upper conductive film strips are made of a same metal material.

Claim 5

A semiconductor device as defined in claim 1 , further comprising: a metal electrode pad formed on the lower insulating layer in a region different from a region where the electric coil is formed, at a same time when the plurality of lower conductive film strips are formed; and a redistribution layer filling an opening provided in the inter-layer insulating layer above the metal electrode pad and laying on the inter-layer insulating layer at a region different from the region where the electric coil is formed, said redistribution layer being formed at a same time when the plurality of implanted conductive members and the plurality of upper conductive film strips are formed, where the semiconductor device is packaged at a wafer level.

Claim 6

A semiconductor device as defined in claim 1 , further comprising: a switch connected in series to the electric coil; and a control circuit for controlling switching operations of the switch.

Claim 7

A semiconductor device, comprising: a semiconductor substrate covered with a base insulating film; a lower insulating layer coated on the base insulating film; a plurality of lower conductive film strips arranged in a pattern closely adjacent and parallel to one another in a line width orientation, every adjacent two of the lower conductive film strips being electrically separated from each other; an inter-layer insulating layer formed on the lower insulating layer and the plurality of lower conductive film strips; a plurality of implanted conductive members implanted in a plurality of connection holes formed in the inter-layer insulating layer at positions corresponding to both edge sides of the plurality of the lower conductive film strips; and a plurality of upper conductive film strips formed on the plurality of implanted conductive members and the inter-layer insulating layer to connect an edge side of each one of the plurality of the lower conductive film strips to an opposite edge side of adjacent one of the plurality of the lower conductive film strips through each one of the plurality of the implanted conductive members so that the plurality of lower conductive film strips are connected in series, wherein the plurality of lower conductive film strips, the plurality of implanted conductive members, and the plurality of upper conductive film strips form an electric coil, the inter-layer insulating layer is a multi-layered film including at least different two insulating layers, the semiconductor device further comprising a magnetic member formed in the inter-layer insulating layer to an extent of a length covering the plurality of lower conductive film strips, and the inter-layer insulating layer includes a silicon dioxide film, a silicon nitride film, and a photosensitive polyimide layer which are overlaid in this order from a bottom.

Claim 8

A semiconductor device, comprising: a semiconductor substrate covered with a base insulating film; a lower insulating layer coated on the base insulating film; a plurality of lower conductive film strips arranged in a pattern closely adjacent and parallel to one another in a line width orientation, every adjacent two of the lower conductive film strips being electrically separated from each other; an inter-layer insulating layer formed on the lower insulating layer and the plurality of lower conductive film strips; a plurality of implanted conductive members implanted in a plurality of connection holes formed in the inter-layer insulating layer at positions corresponding to both edge sides of the plurality of the lower conductive film strips; and a plurality of upper conductive film strips formed on the plurality of implanted conductive members and the inter-layer insulating layer to connect an edge side of each one of the plurality of the lower conductive film strips to an opposite edge side of adjacent one of the plurality of the lower conductive film strips through each one of the plurality of the implanted conductive members so that the plurality of lower conductive film strips are connected in series, wherein the plurality of lower conductive film strips, the plurality of implanted conductive members, and the plurality of upper conductive film strips form an electric coil, the inter-layer insulating layer is a multi-layered film including at least different two insulating layers, the semiconductor device further comprising a magnetic member formed in the inter-layer insulating layer to an extent of a length covering the plurality of lower conductive film strips, and the inter-layer insulating layer includes a silicon dioxide film, a silicon nitride film, and a photosensitive polyimide layer which are overlaid in this order from a bottom.

Claim 9

A semiconductor device as defined in claim 6 , wherein the magnetic member is deposited on the silicon nitride film to an extent of a length to cover the plurality of lower conductive film strips.

Claim 10

A semiconductor device, comprising: a semiconductor substrate covered with a base insulating film; a lower insulating layer coated on the base insulating film; a plurality of lower conductive film strips arranged in a pattern closely adjacent and parallel to one another in a line width orientation, every adjacent two of the lower conductive film strips being electrically separated from each other; an inter-layer insulating layer formed on the lower insulating layer and the plurality of lower conductive film strips; a plurality of implanted conductive members implanted in a plurality of connection holes formed in the inter-layer insulating layer at positions corresponding to both edge sides of the plurality of the lower conductive film strips; and a plurality of upper conductive film strips formed on the plurality of implanted conductive members and the inter-layer insulating layer to connect an edge side of each one of the plurality of the lower conductive film strips to an opposite edge side of adjacent one of the plurality of the lower conductive film strips through each one of the plurality of the implanted conductive members so that the plurality of lower conductive film strips are connected in series, wherein the plurality of lower conductive film strips, the plurality of implanted conductive members, and the plurality of upper conductive film strips form an electric coil, the inter-layer insulating layer is a multi-layered film including at least different two insulating layers, the semiconductor device further comprising a magnetic member formed in the inter-layer insulating layer to an extent of a length covering the plurality of lower conductive film strips, and the inter-layer insulating layer includes a silicon dioxide film, a silicon nitride film, and a photosensitive polybenz-oxazole layer which are overlaid in this order.

Claim 11

A semiconductor device, comprising: a semiconductor substrate covered with a base insulating film; a lower insulating layer coated on the base insulating film; a plurality of lower conductive film strips arranged in a pattern closely adjacent and parallel to one another in a line width orientation, every adjacent two of the lower conductive film strips being electrically separated from each other; an inter-layer insulating layer formed on the lower insulating layer and the plurality of lower conductive film strips; a plurality of implanted conductive members implanted in a plurality of connection holes formed in the inter-layer insulating layer at positions corresponding to both edge sides of the plurality of the lower conductive film strips; and a plurality of upper conductive film strips formed on the plurality of implanted conductive members and the inter-layer insulating layer to connect an edge side of each one of the plurality of the lower conductive film strips to an opposite edge side of adjacent one of the plurality of the lower conductive film strips through each one of the plurality of the implanted conductive members so that the plurality of lower conductive film strips are connected in series, wherein the plurality of lower conductive film strips, the plurality of implanted conductive members, and the plurality of upper conductive film strips form an electric coil, the inter-layer insulating layer is a multi-layered film including at least different two insulating layers, the semiconductor device further comprising a magnetic member formed in the inter-layer insulating layer to an extent of a length covering the plurality of lower conductive film strips, and the inter-layer insulating layer includes a silicon dioxide film, a silicon nitride film, and a photosensitive polybenz-oxazole layer which are overlaid in this order.

Claim 12

A semiconductor device, comprising: a semiconductor substrate covered with a base insulating film; a lower insulating layer coated on the base insulating film; a plurality of lower conductive film strips arranged in a pattern closely adjacent and parallel to one another in a line width orientation, every adjacent two of the lower conductive film strips being electrically separated from each other; an inter-layer insulating layer formed on the lower insulating layer and the plurality of lower conductive film strips; a plurality of implanted conductive members implanted in a plurality of connection holes formed in the inter-layer insulating layer at positions corresponding to both edge sides of the plurality of the lower conductive film strips; and a plurality of upper conductive film strips formed on the plurality of implanted conductive members and the inter-layer insulating layer to connect an edge side of each one of the plurality of the lower conductive film strips to an opposite edge side of adjacent one of the plurality of the lower conductive film strips through each one of the plurality of the implanted conductive members so that the plurality of lower conductive film strips are connected in series, wherein the plurality of lower conductive film strips, the plurality of implanted conductive members, and the plurality of upper conductive film strips form an electric coil, and the magnetic member is made of materials which do not include ferrum.

Claim 13

A semiconductor device, comprising: a semiconductor substrate covered with a base insulating film; a lower insulating layer coated on the base insulating film; a plurality of lower conductive film strips arranged in a pattern closely adjacent and parallel to one another in a line width orientation, every adjacent two of the lower conductive film strips being electrically separated from each other; an inter-layer insulating layer formed on the lower insulating layer and the plurality of lower conductive film strips; a plurality of implanted conductive members implanted in a plurality of connection holes formed in the inter-layer insulating layer at positions corresponding to both edge sides of the plurality of the lower conductive film strips; and a plurality of upper conductive film strips formed on the plurality of implanted conductive members and the inter-layer insulating layer to connect an edge side of each one of the plurality of the lower conductive film strips to an opposite edge side of adjacent one of the plurality of the lower conductive film strips through each one of the plurality of the implanted conductive members so that the plurality of lower conductive film strips are connected in series, wherein the plurality of lower conductive film strips, the plurality of implanted conductive members, and the plurality of upper conductive film strips form an electric coil, and the magnetic member is made of materials which do not include ferrum.

Claim 14

A semiconductor device, comprising: a semiconductor substrate covered with a base insulating film; a lower insulating layer coated on the base insulating film; a plurality of lower conductive film strips arranged in a pattern closely adjacent and parallel to one another in a line width orientation, every adjacent two of the lower conductive film strips being electrically separated from each other; an inter-layer insulating layer formed on the lower insulating layer and the plurality of lower conductive film strips; a plurality of implanted conductive members implanted in a plurality of connection holes formed in the inter-layer insulating layer at positions corresponding to both edge sides of the plurality of the lower conductive film strips; a plurality of upper conductive film strips formed on the plurality of implanted conductive members and the inter-layer insulating layer to connect an edge side of each one of the plurality of the lower conductive film strips to an opposite edge side of adjacent one of the plurality of the lower conductive film strips through each one of the plurality of the implanted conductive members so that the plurality of lower conductive film strips are connected in series, wherein the plurality of lower conductive film strips, the plurality of implanted conductive members, and the plurality of upper conductive film strips form an electric coil, and said semiconductor device further comprises: a switch connected in series to the electric coil; a control circuit for controlling switching operations of the switch; and a voltage regulating circuit for regulating an input voltage to a constant voltage.

Claim 15

A semiconductor device, comprising: a semiconductor substrate covered with a base insulating film; a lower insulating layer coated on the base insulating film; a plurality of lower conductive film strips arranged in a pattern closely adjacent and parallel to one another in a line width orientation, every adjacent two of the lower conductive film strips being electrically separated from each other; an inter-layer insulating layer formed on the lower insulating layer and the plurality of lower conductive film strips; a plurality of implanted conductive members implanted in a plurality of connection holes formed in the inter-layer insulating layer at positions corresponding to both edge sides of the plurality of the lower conductive film strips; a plurality of upper conductive film strips formed on the plurality of implanted conductive members and the inter-layer insulating layer to connect an edge side of each one of the plurality of the lower conductive film strips to an opposite edge side of adjacent one of the plurality of the lower conductive film strips through each one of the plurality of the implanted conductive members so that the plurality of lower conductive film strips are connected in series, wherein the plurality of lower conductive film strips, the plurality of implanted conductive members, and the plurality of upper conductive film strips form an electric coil, and said semiconductor device further comprises: a switch connected in series to the electric coil; a control circuit for controlling switching operations of the switch; and a voltage regulating circuit for regulating an input voltage to a constant voltage.

Claim 16

A DC—DC converter, comprising any one of the semiconductor devices defined in claims 1 – 10 .