Patent US6960538B2 successfully refreshed from Google Patents.
US6960538B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Composite dielectric forming methods and composite dielectrics
Assignee: Micron Technology Inc
•
Filing: 2002-08-21
•
Granted: 2005-11-01
•
Expires: 2022-08-21
Abstract
Abstract A composite dielectric forming method includes atomic layer depositing alternate layers of hafnium oxide and lanthanum oxide over a substrate. The hafnium oxide can be thermally stable, crystalline hafnium oxide and the lanthanum oxide can be thermally stable, crystalline lanthanum oxide. A transistor may comprise the composite dielectric as a gate dielectric. A capacitor may comprise the composite dielectric as a capacitor dielectric.
Inventors
- 👤 Kie Y. Ahn
- 👤 Leonard Forbes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:12
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45529; C23C16/45531; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10P14/66; H10P14/662; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69392; H10P14/69395; H10P14/69396; H10P14/69397
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
94 words
A composite dielectric forming method comprising: chemisorbing one monolayer of a first material over a substrate, the first material comprising a first metal; treating at least some of the chemisorbed first material and forming a thermally stable, crystalline oxide of the first metal; chemisorbing on the first metal oxide one monolayer of a second material comprising a second metal; and treating at least some of the chemisorbed second material and forming a thermally stable, crystalline oxide of the second metal, one of the first and second metals comprising hafnium and the other comprising lanthanum.
Claim 2
Dependent Claim
94 words
A composite dielectric forming method comprising: chemisorbing one monolayer of a first material over a substrate, the first material comprising a first metal; treating at least some of the chemisorbed first material and forming a thermally stable, crystalline oxide of the first metal; chemisorbing on the first metal oxide one monolayer of a second material comprising a second metal; and treating at least some of the chemisorbed second material and forming a thermally stable, crystalline oxide of the second metal, one of the first and second metals comprising hafnium and the other comprising lanthanum.
Claim 3
Dependent Claim
25 words
The method of claim 1 wherein the first material comprises HfCl 4 and the treating the chemisorbed first material comprises exposure to H 2 O.
Claim 4
Dependent Claim
17 words
The method of claim 1 wherein the oxide of the first metal consists of HfO 2 .
Claim 5
Dependent Claim
21 words
The method of claim 3 wherein the HfO 2 is formed on and in contact with a semiconductive or conductive substrate.
Claim 6
Dependent Claim
25 words
The method of claim 1 wherein the first material comprises La(thd) 3 and the treating the chemisorbed first material comprises exposure to H 2 O.
Claim 7
Dependent Claim
19 words
The method of claim 1 wherein the oxide of the first metal consists of La 2 O 3 .
Claim 8
Dependent Claim
20 words
The method of claim 1 further comprising forming successive monolayers of the first metal oxide and the second metal oxide.
Claim 9
Dependent Claim
18 words
The method of claim 1 wherein the substrate temperature is from about 180° C. to about 425° C.
Claim 10
Dependent Claim
16 words
The method of claim 8 wherein the substrate temperature is from 250° C. to 400° C.
Claim 11
Dependent Claim
19 words
A method of forming a transistor comprising forming a gate dielectric according to the method of claim 1 .
Claim 12
Dependent Claim
19 words
A method of forming a capacitor comprising forming a capacitor dielectric according to the method of claim 1 .
Claim 13
Dependent Claim
99 words
A composite dielectric forming method comprising atomic layer depositing one monolayer of a first material on a substrate using a first precursor comprising a first metal; exposing the deposited first material to oxygen and forming a thermally stable, crystalline oxide of the first metal; atomic layer depositing one monolayer of a second material on the first metal oxide using a second precursor comprising a second metal; and exposing the deposited second material to oxygen and forming a thermally stable, crystalline oxide of the second metal, one of the first and second metals comprising hafnium and the other comprising lanthanum.
Claim 14
Dependent Claim
99 words
A composite dielectric forming method comprising atomic layer depositing one monolayer of a first material on a substrate using a first precursor comprising a first metal; exposing the deposited first material to oxygen and forming a thermally stable, crystalline oxide of the first metal; atomic layer depositing one monolayer of a second material on the first metal oxide using a second precursor comprising a second metal; and exposing the deposited second material to oxygen and forming a thermally stable, crystalline oxide of the second metal, one of the first and second metals comprising hafnium and the other comprising lanthanum.
Claim 15
Dependent Claim
17 words
The method of claim 12 wherein the oxide of the first metal consists of HfO 2 .
Claim 16
Dependent Claim
21 words
The method of claim 13 wherein the HfO 2 is formed on and in contact with a semiconductive or conductive substrate.
Claim 17
Dependent Claim
19 words
The method of claim 12 wherein the oxide of the first metal consists of La 2 O 3 .
Claim 18
Dependent Claim
20 words
The method of claim 12 further comprising forming successive monolayers of the first metal oxide and the second metal oxide.
Claim 19
Dependent Claim
19 words
A method of forming a transistor comprising forming a gate dielectric according to the method of claim 12 .
Claim 20
Dependent Claim
19 words
A method of forming a capacitor comprising forming a capacitor dielectric according to the method of claim 12 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2008-10-31 | 2009-05-02 | 2009-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-10-31 | 2013-05-02 | 2013-11-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-10-31 | 2017-05-02 | 2017-11-01 | $7700.00 | Window Closed / Lapsed |