Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
164 words
A delay stage circuit of a ring oscillator for setting a delay value of the delay stage circuit and a corresponding frequency of operation of the ring oscillator, the delay stage circuit comprising: a differential transistor pair for receiving an input oscillation signal and for producing a corresponding output oscillation signal characterized by a delay, wherein the differential transistor pair is coupled to receive a bias signal set by an external bias circuit; an active load further comprising a pair of MOSFET devices, each having a drain coupled to a supply, a source coupled to a drain of one device of the differential transistor pair and a gate coupled to a selectable resistive load that is further coupled to the supply; and wherein the selectable resistive load comprises a plurality of resistive devices that, when coupled in series with a gate-to-source capacitance provided by the pair of MOSFET devices, generates a desired R-C time constant to define the delay of the differential transistor pair.
Claim 2
Dependent Claim
164 words
A delay stage circuit of a ring oscillator for setting a delay value of the delay stage circuit and a corresponding frequency of operation of the ring oscillator, the delay stage circuit comprising: a differential transistor pair for receiving an input oscillation signal and for producing a corresponding output oscillation signal characterized by a delay, wherein the differential transistor pair is coupled to receive a bias signal set by an external bias circuit; an active load further comprising a pair of MOSFET devices, each having a drain coupled to a supply, a source coupled to a drain of one device of the differential transistor pair and a gate coupled to a selectable resistive load that is further coupled to the supply; and wherein the selectable resistive load comprises a plurality of resistive devices that, when coupled in series with a gate-to-source capacitance provided by the pair of MOSFET devices, generates a desired R-C time constant to define the delay of the differential transistor pair.
Claim 3
Dependent Claim
27 words
The delay stage circuit of claim 1 wherein the selectable resistive load further includes a plurality of parallel coupled resistors wherein at least one resistor is selectable.
Claim 4
Dependent Claim
19 words
The delay stage circuit of claim 2 wherein the at least one selectable resistor is a resistor configured MOSFET.
Claim 5
Dependent Claim
26 words
The delay stage circuit of claim 2 wherein the at least one selectable resistor is a traditional resistive element coupled in series with a selectable switch.
Claim 6
Dependent Claim
45 words
The delay stage circuit of claim 2 wherein the selectable resistive load further includes a plurality of scaled parallel coupled resistors that, when selected and coupled to the gate-to-source capacitance of a corresponding active load, provide an R-C time constant that generates a corresponding delay.
Claim 7
Dependent Claim
45 words
The delay stage circuit of claim 5 wherein the total delay of the delay elements of the ring oscillator results in a frequency of operation of the ring oscillator that is approximately equal to one of 2.5 GHz, 3.125 GHz, 4.0 GHz, and 5.0 GHz.
Claim 8
Dependent Claim
200 words
A ring oscillator, comprising: a plurality of delay stages coupled serially in a loop, each delay stage further comprising an input for receiving an oscillation signal and an output for producing a corresponding oscillation signal characterized by a delay; a bias circuit for selectively providing a bias signal to the plurality of delay stages to adjust the delay of the corresponding output oscillation signal; wherein each delay stage further includes: a differential transistor pair for receiving an input oscillation signal and for producing a corresponding output oscillation signal characterized by the delay, wherein the differential transistor pair is coupled to receive the bias signal provided by the bias circuit; and an active load comprising a pair of MOSFET devices, each having a drain coupled to a supply, a source coupled to a drain of one device of the differential transistor pair and a gate coupled to a selectable resistive load that is further coupled to the supply; and wherein the selectable resistive load comprises a plurality of resistive devices that, when coupled in series with a gate-to-source capacitance provided by the pair of MOSFET devices, generates a desired R-C time constant to define the delay of the differential transistor pair.
Claim 9
Dependent Claim
200 words
A ring oscillator, comprising: a plurality of delay stages coupled serially in a loop, each delay stage further comprising an input for receiving an oscillation signal and an output for producing a corresponding oscillation signal characterized by a delay; a bias circuit for selectively providing a bias signal to the plurality of delay stages to adjust the delay of the corresponding output oscillation signal; wherein each delay stage further includes: a differential transistor pair for receiving an input oscillation signal and for producing a corresponding output oscillation signal characterized by the delay, wherein the differential transistor pair is coupled to receive the bias signal provided by the bias circuit; and an active load comprising a pair of MOSFET devices, each having a drain coupled to a supply, a source coupled to a drain of one device of the differential transistor pair and a gate coupled to a selectable resistive load that is further coupled to the supply; and wherein the selectable resistive load comprises a plurality of resistive devices that, when coupled in series with a gate-to-source capacitance provided by the pair of MOSFET devices, generates a desired R-C time constant to define the delay of the differential transistor pair.
Claim 10
Dependent Claim
57 words
The ring oscillator of claim 7 wherein a frequency of oscillation of the ring oscillator is a function of the delay of each delay stage circuit of the ring oscillator as set by the selectable resistive load and as a function of the externally provided bias signal that adjusts a bias level of the differential transistor pair.
Claim 11
Dependent Claim
26 words
The ring oscillator of claim 7 wherein the selectable resistive load further includes a plurality of parallel coupled resistors wherein at least one resistor is selectable.
Claim 12
Dependent Claim
18 words
The ring oscillator of claim 9 wherein the at least one selectable resistor is a resistor configured MOSFET.
Claim 13
Dependent Claim
25 words
The ring oscillator of claim 9 wherein the at least one selectable resistor is a traditional resistive element coupled in series with a selectable switch.
Claim 14
Dependent Claim
38 words
The ring oscillator of claim 9 wherein the selectable resistive load further includes a plurality of parallel coupled resistors that, when selected and coupled to the gate-to-source capacitance, provides an R-C time constant that generates a corresponding delay.
Claim 15
Dependent Claim
44 words
The ring oscillator of claim 12 wherein the total delay of the delay stages of the ring oscillator results in a frequency of operation of the ring oscillator that is approximately equal to one of 2.5 GHz, 3.125 GHz, 4.0 GHz, and 5.0 GHz.
Claim 16
Dependent Claim
215 words
A delay stage circuit of a ring oscillator for setting a delay value of the delay stage and a corresponding frequency of operation of the ring oscillator, the circuit comprising: a differential transistor pair for receiving an input oscillation signal and for producing a corresponding output oscillation signal characterized by a delay, the differential transistor pair coupled to receive a bias signal set by an external bias circuit; an active load comprising a pair of current mirrors, each current mirror including: a MOSFET mirror device each having a source coupled to a supply, a drain coupled to a drain of each device of the differential transistor pair and a gate coupled to a selectable load; a current mirror reference device coupled to the gate of the MOSFET device, the current mirror reference device for setting a current level in the MOSFET mirror device; and wherein the selectable load coupled to the gate of the MOSFET device comprises a plurality of capacitive devices coupled between the gate of the MOSFET device and the supply, a plurality of resistive devices coupled between the gate of the MOSFET device and the drain of the MOSFET device, and wherein the resistive and capacitive devices generate a desired R-C time constant to define the delay of the differential transistor pair.
Claim 17
Dependent Claim
215 words
A delay stage circuit of a ring oscillator for setting a delay value of the delay stage and a corresponding frequency of operation of the ring oscillator, the circuit comprising: a differential transistor pair for receiving an input oscillation signal and for producing a corresponding output oscillation signal characterized by a delay, the differential transistor pair coupled to receive a bias signal set by an external bias circuit; an active load comprising a pair of current mirrors, each current mirror including: a MOSFET mirror device each having a source coupled to a supply, a drain coupled to a drain of each device of the differential transistor pair and a gate coupled to a selectable load; a current mirror reference device coupled to the gate of the MOSFET device, the current mirror reference device for setting a current level in the MOSFET mirror device; and wherein the selectable load coupled to the gate of the MOSFET device comprises a plurality of capacitive devices coupled between the gate of the MOSFET device and the supply, a plurality of resistive devices coupled between the gate of the MOSFET device and the drain of the MOSFET device, and wherein the resistive and capacitive devices generate a desired R-C time constant to define the delay of the differential transistor pair.
Claim 18
Dependent Claim
57 words
The delay stage circuit of claim 14 wherein a frequency of oscillation of the ring oscillator is a function of the delay of each delay stage circuit of the ring oscillator as set by the selectable load and as a function of the externally provided bias signal that adjusts a bias level of the differential transistor pair.
Claim 19
Dependent Claim
25 words
The delay stage circuit of claim 14 wherein the selectable load further includes at least one selectable resistive device and a corresponding selectable capacitive device.
Claim 20
Dependent Claim
23 words
The delay stage circuit of claim 14 wherein the at least one of the plurality of resistive devices is a resistor configured MOSFET.
Claim 21
Dependent Claim
23 words
The delay stage circuit of claim 14 wherein the at least one of the plurality of capacitive devices is a capacitor configured MOSFET.
Claim 22
Dependent Claim
30 words
The delay stage circuit of claim 14 wherein the at least one of the plurality of resistive devices is a traditional resistive element coupled in series with a selectable switch.
Claim 23
Dependent Claim
30 words
The delay stage circuit of claim 14 wherein the at least one of the plurality of capacitive devices is a traditional capacitive element coupled in series with a selectable switch.
Claim 24
Dependent Claim
45 words
The delay stage circuit of claim 14 wherein the selectable loads further include a plurality of scaled parallel coupled resistors that, when selected and coupled in series with a plurality of scaled parallel coupled capacitors, provide an R-C time constant that generates a corresponding delay.
Claim 25
Dependent Claim
44 words
The delay stage of claim 21 wherein the total delay of the delay stages of the ring oscillator result in a frequency of operation of the ring oscillator that is approximately equal to one of 2.5 GHz, 3.125 GHz, 4.0 GHz, and 5.0 GHz.
Claim 26
Dependent Claim
113 words
A programmable multi-gigabit transceiver, comprising: programmable physical media attachment (PMA) transmit and receive module for transmitting and receiving high-speed serial data; phase-locked loop (PLL) circuitry producing clock signals for transmit and receive operations of the PMA transmit and receive module; and a ring oscillator of the PLL further including a plurality of delay stages circuits, each of the plurality of delay stage circuits further including: a differential transistor pair coupled to receive an oscillation, the differential transistor pair coupled to an active load that generates a delay for an output oscillation of the differential transistor pair; and wherein the active load further includes at least one of a selectable resistive and capacitive element.
Claim 27
Dependent Claim
113 words
A programmable multi-gigabit transceiver, comprising: programmable physical media attachment (PMA) transmit and receive module for transmitting and receiving high-speed serial data; phase-locked loop (PLL) circuitry producing clock signals for transmit and receive operations of the PMA transmit and receive module; and a ring oscillator of the PLL further including a plurality of delay stages circuits, each of the plurality of delay stage circuits further including: a differential transistor pair coupled to receive an oscillation, the differential transistor pair coupled to an active load that generates a delay for an output oscillation of the differential transistor pair; and wherein the active load further includes at least one of a selectable resistive and capacitive element.