US6932867B2
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Method for growing thin oxide films
Assignee: ASM International NV
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Filing: 2003-07-10
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Granted: 2005-08-23
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Expires: 2023-07-10
Abstract
Abstract A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material. The oxygen source material is preferably a metal alkoxide. The metal source material may be a metal halide, hydride, alkoxide, alkyl, a cyclopentadienyl compound, or a diketonate.
Inventors
- 👤 Mikko Ritala
- 👤 Antti Rahtu
- 👤 Markku Leskela
- 👤 Kaupo Kukli
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:55
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; H; H10; H10P; H10P14/00; H10P14/20; C23C16/02; C23C16/0209; C23C16/0218; C23C16/0272; C23C16/22; C23C16/30; C23C16/40; C23C16/45531; C30; C30B; C30B25/00; C30B25/02; C30B25/18; C30B29/00; C30B29/10; C30B29/16
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
68 words
An atomic layer deposition process for growing thin oxide films on a surface of a substrate comprising alternately reacting the surface of the substrate with a metal source material and an oxygen source material, wherein the oxygen source material is a boron, silicon or metal compound which has at least one organic ligand and wherein an oxygen is bonded to at least one boron, silicon or metal atom.
Claim 2
Dependent Claim
68 words
An atomic layer deposition process for growing thin oxide films on a surface of a substrate comprising alternately reacting the surface of the substrate with a metal source material and an oxygen source material, wherein the oxygen source material is a boron, silicon or metal compound which has at least one organic ligand and wherein an oxygen is bonded to at least one boron, silicon or metal atom.
Claim 3
Dependent Claim
19 words
A process according to claim 1 , wherein the oxygen source material serves as a second metal source material.
Claim 4
Dependent Claim
17 words
A process according to claim 1 , wherein the substrate for the film is a silicon surface.
Claim 5
Dependent Claim
166 words
A process according to claim 1 , wherein the oxygen source material used is a compound according to gross Formula II-V M x (OR) a (II) M x (OR) a-z Y z (III) M x (OR) a L y (IV) M x (OR) a-z Y z L y (V) wherein M is any metal of the Periodic Table of the Elements, boron and/or silicon, the M's may be mutually the same or different. x is an integer describing the number of M atoms, which number may be 1, 2, 3 or 4, R is a hydrocarbon group, the R's may be the same or different, a is the valence (sum of valences) of the metal(s), boron and/or silicon M, z is an integer 1-6, in which case a-z>0, Y is a ligand having a negative charge, but not an alkoxide, L is a neutral adduct ligand which bonds to M by one or several of its atoms, and y describes the number of the bonding ligands.
Claim 6
Dependent Claim
52 words
A process according to claim 4 , wherein the metal M is selected from the group consisting of group 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 or 12 of the Periodic Table of the Elements, boron, aluminum, silicon, gallium, germanium, indium, tin, antimony, thallium, lead, bismuth, and polonium.
Claim 7
Dependent Claim
39 words
A process according to claim 4 , wherein R is a substituted or unsubstituted, cyclic, linear or branched group selected from the group consisting of an alkyl, alkenyl, aryl, alkylaryl, arylalkyl, alkoxy, thio, amino, cyano, and a silyl group.
Claim 8
Dependent Claim
19 words
A process according to claim 6 , wherein R is a linear or branched C 1 -C 10 alkyl.
Claim 9
Dependent Claim
26 words
The process according to claim 7 , wherein R is selected from the group consisting of an ethyl, propyl, isopropyl, butyl, tert-butyl and an isobutyl group.
Claim 10
Dependent Claim
50 words
A process according to claim 4 , wherein the ligand Y is selected from the group consisting of a diketonate, a corresponding sulfur or nitrogen compound, an alkyl, a perfluoroalkyl, a halide, a hydride, an amide, an alkoxide, a carboxylate, a Shiff base, and a cyclopentadienyl group or its derivative.
Claim 11
Dependent Claim
26 words
A process according to claim 4 , wherein R is selected from the group consisting of a methyl, an ethyl, a propyl, and an isopropyl group.
Claim 12
Dependent Claim
50 words
A process according to claim 4 , wherein the ligand L is selected from the group consisting of: (i) a hydrocarbon, (ii) an oxygen-containing hydrocarbon, (iii) a nitrogen-containing hydrocarbon, (iv) a sulfur-containing hydrocarbon, (v) a phosphorus-containing hydrocarbon, (vi) an arsenic-containing hydrocarbon, (vii) a selenium-containing hydrocarbon, and (viii) a tellurium-containing hydrocarbon.
Claim 13
Dependent Claim
103 words
A process according to claim 11 , wherein L is selected from the group consisting of: (i) an amine or polyamine, (ii) a bipyridine (iii) a ligand described by the formula in which formula G is —O—, —S— or —NR 1 , wherein R 1 is hydrogen or a substituted or unsubstituted, cyclic, linear or branched, alkyl, alkenyl, aryl, alkylaryl, arylalkyl, alkoxy, thio, cyano or silyl group, and each carbon atom of a ring according to the formula has an R 1 -like substituent, which are mutually either the same or different, (iv) an ether or polyether, an (v) a thioether or polythioether.
Claim 14
Dependent Claim
59 words
A process according to claim 1 , wherein the oxygen source material is selected from the group consisting of an alkoxide, a β-diketonate, a triketonate, a tropolonate, a carboxylate, an ester, a quinone, a catecholate complex, a carbamate, and a compound having two or more of these groups together with any metal of the Periodic Table of the Elements.
Claim 15
Dependent Claim
16 words
A process according to claim 1 , wherein the oxygen source material is an orthoquinone complex.
Claim 16
Dependent Claim
16 words
A process according to claim 11 , wherein the oxygen source material is a metal alkoxide.
Claim 17
Dependent Claim
89 words
A process according to claim 1 , wherein the metal source material is a compound with the formula M′X b , where M′ is any metal of the Periodic Table of the Elements, boron or silicon, b is the valence of M′, and X is a negatively charged ligand, each X being, independent of the others, where X is selected from the group consisting of a halide (F, Cl, Br, I), a hydride, an alkylamide NR 2 , an alkoxide, an aryloxide, an alkyl, a cyclopentadienyl, and a β-diketonate.
Claim 18
Dependent Claim
29 words
A process according to claim 1 , wherein the metal source material is selected from the group consisting of an alkyl compound, a metal halide, and a metal alkoxide.
Claim 19
Dependent Claim
29 words
A process according to claim 1 , further comprising treating the substrate to remove the native oxide from the surface of the substrate before the growing of the film.
References Cited (Backward Citations)
US4058430A
Cited
US5922405A
Cited
US6037003A
Cited
WO1998046617A1
Cited
US6258157B1
Cited
US6632279B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2008-08-22 | 2009-02-21 | 2009-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-08-22 | 2013-02-21 | 2013-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-08-22 | 2017-02-21 | 2017-08-23 | $7700.00 | Window Closed / Lapsed |