Power amplifier module for wireless communication devices

Claim 2

A power amplifier module for amplifying radio frequency signals, comprising: a) a radio frequency power amplifier including one or more semiconductor transistors, adapted to receive an input radio frequency signal and a processed power-sensing control signal, and to output an amplified radio frequency signal; b) a power-sensing circuit adapted to receive the amplified radio frequency signal and to output the power-sensing control signal; c) a control logic that receives and processes the power-sensing control signal, and outputs a processed power-sensing control signal in response to a quality or a magnitude of the amplified radio frequency signal; d) a mode control circuit coupled to the radio frequency power amplifier to control power of the radio frequency power amplifier; e) an electronic circuit including the radio frequency power amplifier, the power-sensing circuit and the control logic, said electronic circuit having an electrically conductive base; and f) a multi-layer three dimensional substrate having a conductive layer adapted to bond with the electrically conductive base.

Claim 3

The module of claim 1 wherein the quality of the amplified radio frequency signal includes one or more of inter-modulation components of the amplified radio frequency signal.

Claim 4

The module of claim 1 wherein the quality of the amplified radio frequency signal includes Error Vector Magnitude (EVM), Bit Error Rate (BER), or Packet Error Rate (PER).

Claim 5

The module of claim 1 wherein the magnitude of the amplified radio frequency signal includes one or more of the gain, the voltage, the current, and the power of the amplified radio frequency signal.

Claim 6

The module of claim 1 wherein the radio frequency power amplifier outputs the amplified radio frequency signal under the control of a bias signal.

Claim 7

The module of claim 5 wherein the bias signal is controlled by the power-sensing control signal.

Claim 8

The module of claim 1 , wherein the impedance of the external circuit that provides the input radio frequency signal is matched by an input impedance matching circuit.

Claim 9

The module of claim 1 , wherein the impedance of external circuit that receives the amplified radio frequency signal is matched by an output impedance matching circuit.

Claim 10

The module of claim 1 wherein the conductive layer includes a central metal land adapted to bond with the electrically conductive base of the electronic circuit, said central metal land connected with metal pins at the corners of the conductive layer.

Claim 11

The module of claim 9 wherein the central metal land and the metal pins of the conductive layer includes a plurality of via holes through the upper layers in the multilayer three-dimensional substrate.

Claim 12

A wireless communication device for transmitting and receiving radio frequency signals, comprising a) a power amplifier module for amplifying radio frequency signals, comprising: a radio frequency power amplifier including one or more semiconductor transistors, adapted to receive an input radio frequency signal and a processed power-sensing control signal, and to output an amplified radio frequency signal; a power-sensing circuit including a control logic adapted to receive and process the amplified radio frequency signal and to output the processed power-sensing control signal in response to a quality or a magnitude of the amplified radio frequency signal; and an electrically conductive base, and b) an antenna adapted to provide the input radio frequency signal to the power amplifier module and to receive the output radio frequency signal from the power amplifier module; and c) a mode control circuit coupled to the radio frequency power amplifier to control power of the radio frequency power amplifier; d) a multi-layer three dimensional a substrate having a conductive layer adapted to bond with the electrically conductive base.

Claim 13

A wireless communication device for transmitting and receiving radio frequency signals, comprising a) a power amplifier module for amplifying radio frequency signals, comprising: a radio frequency power amplifier including one or more semiconductor transistors, adapted to receive an input radio frequency signal and a processed power-sensing control signal, and to output an amplified radio frequency signal; a power-sensing circuit including a control logic adapted to receive and process the amplified radio frequency signal and to output the processed power-sensing control signal in response to a quality or a magnitude of the amplified radio frequency signal; and an electrically conductive base, and b) an antenna adapted to provide the input radio frequency signal to the power amplifier module and to receive the output radio frequency signal from the power amplifier module; and c) a mode control circuit coupled to the radio frequency power amplifier to control power of the radio frequency power amplifier; d) a multi-layer three dimensional a substrate having a conductive layer adapted to bond with the electrically conductive base.

Claim 14

The module of claim 11 wherein the quality of the amplified radio frequency signal includes one or more of inter-modulation components of the amplified radio frequency signal.

Claim 15

The module of claim 11 wherein the quality of the amplified radio frequency signal includes Error Vector Magnitude (EVM), Bit Error Rate (BER), or Packet Error Rate (PER).

Claim 16

The module of claim 11 wherein the magnitude of the amplified radio frequency signal includes one or more of the gain, the voltage, the current, and the power of the amplified radio frequency signal.

Claim 17

The module of claim 11 , further including an input impedance matching circuit and/or an output impedance matching circuit.

Claim 18

The module of claim 11 , further including a base band processor and/or a RF transceiver.

Claim 19

A power amplifier module for amplifying radio frequency signals, comprising: a) an electronic circuit including i) a radio frequency power amplifier including one or more semiconductor transistors, adapted to receive an input radio frequency signal and a power-sensing control signal, and to output an amplified radio frequency signal; ii) a power-sensing circuit adapted to receive the amplified radio frequency signal and to output the power-sensing control signal; iii) an electrically conductive base; and iv) a mode control circuit coupled to the radio frequency power amplifier to control power of the radio frequency power amplifier; b) a three dimensional substrate having a conductive layer adapted to bond with the electrically conductive base.

Claim 20

A power amplifier module for amplifying radio frequency signals, comprising: a) an electronic circuit including i) a radio frequency power amplifier including one or more semiconductor transistors, adapted to receive an input radio frequency signal and a power-sensing control signal, and to output an amplified radio frequency signal; ii) a power-sensing circuit adapted to receive the amplified radio frequency signal and to output the power-sensing control signal; iii) an electrically conductive base; and iv) a mode control circuit coupled to the radio frequency power amplifier to control power of the radio frequency power amplifier; b) a three dimensional substrate having a conductive layer adapted to bond with the electrically conductive base.

Claim 21

The module of claim 17 wherein the conductive layer includes a central metal land adapted to bond with the electrically conductive base of the electronic circuit, said central metal land being connected with metal pins at the corners of the conductive layer.

Claim 22

The module of claim 17 wherein the central metal land and the metal pins of the conductive layer includes a plurality of via holes through the upper layers in the three-dimensional substrate.