Abstract Field effect transistor with increased charge carrier mobility due to stress in the current channel 22 . The stress is in the direction of current flow (longitudinal). In PFET device, the stress is compressive; in NFET devices, the stress is tensile. The stress is created by a compressive film 34 in an area 32 under the channel. The compressive film pushes up on the channel 22 , causing it to bend. In PFET devices, the compressive film is disposed under ends 31 of the channel (e.g. under the source and drain), thereby causing compression in an upper portion 22 A of the channel. In NFET devices, the compressive film is disposed under a middle portion 40 of the channel (e.g. under the gate), thereby causing tension in the, upper portion of the channel. Therefore, both NFET and PFET device can be enhanced. A method for making the devices is included.
A method for making a field effect transistor with a current channel with longitudinal stress, comprising the steps of: a) forming an undercut area under a middle portion of the channel; and b) forming a compressive film in the undercut area so that longitudinal stress is created in the channel.
Claim 2
Independent Claim
50 words
A method for making a field effect transistor with a current channel with longitudinal stress, comprising the steps of: a) forming an undercut area under a middle portion of the channel; and b) forming a compressive film in the undercut area so that longitudinal stress is created in the channel.
Claim 3
Dependent Claim
14 words
The method of claim 1 wherein the channel is released in the middle portion.
Claim 4
Dependent Claim
21 words
The method of claim 1 wherein the undercut area is created by etching a buried oxide layer from under the channel.
Claim 5
Dependent Claim
19 words
The method of claim 1 wherein the compressive film is formed by depositing polysilicon and then oxidizing the polysilicon.