Patent US6822515B2 successfully refreshed from Google Patents.
US6822515B2
Expired / Lapsed
US
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Accurate power sensing circuit for power amplifiers
Assignee: Micro Mobio Corp
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Filing: 2003-03-09
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Granted: 2004-11-23
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Expires: 2023-03-09
Abstract
Abstract An amplifier circuit for amplifying radio frequency signals having temperature compensation and bias compensation includes a radio frequency power amplifier that receives an input radio frequency signal and outputs an amplified radio frequency signal, and a first transistor performing as a detector diode with its collector and base connected. The base of the first transistor receives the amplified radio frequency signal from the power amplifier, a second DC bias input signal from a regulated DC source, and a third power-sensing signal. The amplifier circuit further includes a second transistor to amplify the DC component of the RF signal from the base of the first transistor. The base of the second transistor is coupled to the base of the first transistor. The collector of the second transistor outputs the power-sensing signal, which is coupled to the regulated DC source through a resistor.
Inventors
- 👤 Ikuroh Ichitsubo
- 👤 Weiping Wang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 23:42
CPC Classifications
H; H03; H03G; H03G3/00; H03G3/20; H03G3/30; H03G3/3036; H03G3/3042
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
135 words
An amplifier circuit for amplifying radio frequency signals having temperature compensation and bias compensation, comprising: a) a radio frequency power amplifier to receive an input radio frequency signal and to output an amplified radio frequency signal; b) a first transistor to perform as a detector diode, including i) a first base to receive the amplified radio frequency signal, a second DC bias input signal from a regulated DC source, and a third power-sensing signal; and ii) a first collector connected to the first base; and c) a second transistor to amplify the DC component of the RF signal from the first base, including i) a second base coupled to the first base; and ii) a second collector to output the power-sensing signal, said power-sensing signal being coupled to the regulated DC source through a resistor.
Claim 2
Dependent Claim
135 words
An amplifier circuit for amplifying radio frequency signals having temperature compensation and bias compensation, comprising: a) a radio frequency power amplifier to receive an input radio frequency signal and to output an amplified radio frequency signal; b) a first transistor to perform as a detector diode, including i) a first base to receive the amplified radio frequency signal, a second DC bias input signal from a regulated DC source, and a third power-sensing signal; and ii) a first collector connected to the first base; and c) a second transistor to amplify the DC component of the RF signal from the first base, including i) a second base coupled to the first base; and ii) a second collector to output the power-sensing signal, said power-sensing signal being coupled to the regulated DC source through a resistor.
Claim 3
Dependent Claim
22 words
The amplifier circuit of claim 1 wherein the power-sensing signal is substantially proportional to the strength of the amplified radio frequency signal.
Claim 4
Dependent Claim
20 words
The amplifier circuit of claim 1 wherein the power-sensing signal is provided to an external circuit through a low-pass filter.
Claim 5
Dependent Claim
24 words
The amplifier circuit of claim 1 wherein the regulated DC source is coupled to the first base of the first transistor through a resistor.
Claim 6
Dependent Claim
28 words
The amplifier circuit of claim 1 wherein the first base of the first transistor is coupled to the second base of the second transistor through a low-pass filter.
Claim 7
Dependent Claim
28 words
The amplifier circuit of claim 1 wherein the output of the radio frequency power amplifier is coupled to the first base of the first transistor through a capacitor.
Claim 8
Dependent Claim
34 words
The amplifier circuit of claim 1 wherein the output of the radio frequency power amplifier is connected to an impedance-matching circuit which in turn is coupled to the first base of the first transistor.
Claim 9
Dependent Claim
23 words
The amplifier circuit of claim 1 wherein the size of the first transistor is the same as the size of the second transistor.
Claim 10
Dependent Claim
30 words
The amplifier circuit of claim 1 wherein at least one of the radio frequency power amplifier, the first transistor, and second transistor is fabricated with a Heterojunction Bipolar Transistor (HBT).
Claim 11
Dependent Claim
26 words
The amplifier circuit of claim 1 wherein the input radio frequency signal is modulated at a frequency in the range of 1 MHz to 10 GHz.
Claim 12
Dependent Claim
111 words
A power sensing circuit for sensing radio frequency signals, comprising: a) a first transistor to perform as a detector diode, including i) a first base to receive a first radio frequency input signal output, a second DC bias input signal from a regulated DC source, and a third power-sensing signal; and ii) a first collector connected to the first base; and b) a second transistor to amplify the DC component of the RF signal from the first base, including i) a second base coupled to the first base; and ii) a second collector to output the power-sensing signal, said power-sensing signal being coupled to the regulated DC source through a resistor.
Claim 13
Dependent Claim
111 words
A power sensing circuit for sensing radio frequency signals, comprising: a) a first transistor to perform as a detector diode, including i) a first base to receive a first radio frequency input signal output, a second DC bias input signal from a regulated DC source, and a third power-sensing signal; and ii) a first collector connected to the first base; and b) a second transistor to amplify the DC component of the RF signal from the first base, including i) a second base coupled to the first base; and ii) a second collector to output the power-sensing signal, said power-sensing signal being coupled to the regulated DC source through a resistor.
Claim 14
Dependent Claim
23 words
The power sensing circuit of claim 11 wherein the power-sensing signal is substantially proportional to the strength of the first radio frequency signal.
Claim 15
Dependent Claim
21 words
The power sensing circuit of claim 11 wherein the power-sensing signal is provided to an external circuit through a low-pass filter.
Claim 16
Dependent Claim
25 words
The power sensing circuit of claim 11 wherein the regulated DC source is coupled to the first base of the first transistor through a resistor.
Claim 17
Dependent Claim
29 words
The power sensing circuit of claim 11 wherein the first base of the first transistor is coupled to the second base of the second transistor through a low-pass filter.
Claim 18
Dependent Claim
24 words
The power sensing circuit of claim 11 wherein the size of the first transistor is the same as the size of the second transistor.
Claim 19
Dependent Claim
150 words
A power sensing circuit for sensing radio frequency signals, comprising: a) a first transistor to perform as a detector diode, including i) a first base to receive a first radio frequency input signal output, a second DC bias signal from a regulated DC source coupled through a resistor, and a third power-sensing signal; and ii) a first collector connected to the first base; b) a second transistor to amplify the DC component of the RF signal from the first base, including i) a second base connected to the first base through a low-pass filter; and ii) a second collector to output the power-sensing signal to be coupled to the regulated DC source through a resistor, said power-sensing signal being substantially proportional to the strength of the first radio frequency input signal; and c) an output port coupled to the second collector through a low-pass filter, to output the power-sensing signal.
Claim 20
Dependent Claim
150 words
A power sensing circuit for sensing radio frequency signals, comprising: a) a first transistor to perform as a detector diode, including i) a first base to receive a first radio frequency input signal output, a second DC bias signal from a regulated DC source coupled through a resistor, and a third power-sensing signal; and ii) a first collector connected to the first base; b) a second transistor to amplify the DC component of the RF signal from the first base, including i) a second base connected to the first base through a low-pass filter; and ii) a second collector to output the power-sensing signal to be coupled to the regulated DC source through a resistor, said power-sensing signal being substantially proportional to the strength of the first radio frequency input signal; and c) an output port coupled to the second collector through a low-pass filter, to output the power-sensing signal.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-11-23 | 2008-05-24 | 2008-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-11-23 | 2012-05-24 | 2012-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-11-23 | 2016-05-24 | 2016-11-23 | $7700.00 | Window Closed / Lapsed |