US6809016B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Diffusion stop implants to suppress as punch-through in SiGe
Assignee: Advanced Micro Devices Inc
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Filing: 2003-03-06
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Granted: 2004-10-26
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Expires: 2023-03-06
Abstract
Abstract Diffusion of As in SiGe of MOS transistors based on Si/SiGe is prevented by ion implanting boron. Embodiments include forming As source/drain extension implants in a strained Si/SiGe substrate, ion implanting boron at between the As source/drain extension implant junctions and subsequently annealing to activate the As source/drain extensions, thereby preventing distortion of the originally formed junction.
Inventors
- 👤 Qi Xiang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 23:17
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10D; H10D30/00; H10D30/60; H10D30/601; H10D30/751; H10D30/791; H10D30/798; H10P30/202; H10P30/204; H10P30/222; H10P30/225; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/922; Y10S438/923; Y10S438/933
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
117 words
A method of manufacturing a semiconductor device, the method comprising: forming a substrate comprising a semiconductor layer of silicon (Si) having a strained lattice on a layer of silicon-germanium (SiGe); forming a gate electrode, with side surfaces, on an upper surface of the substrate with a gate dielectric layer therebetween; ion implanting arsenic (As) into the substrate to form source/drain extension implants having junctions with the strained Si and SiGe layers under the side surfaces of the gate electrode; ion implanting boron impurities into the substrate at the junctions to form diffusion stop implants which inhibit diffusion of As; and heating to form activated As source/drain extensions, wherein the diffusion stop implants prevent As diffusion during heating.
Claim 2
Independent Claim
117 words
A method of manufacturing a semiconductor device, the method comprising: forming a substrate comprising a semiconductor layer of silicon (Si) having a strained lattice on a layer of silicon-germanium (SiGe); forming a gate electrode, with side surfaces, on an upper surface of the substrate with a gate dielectric layer therebetween; ion implanting arsenic (As) into the substrate to form source/drain extension implants having junctions with the strained Si and SiGe layers under the side surfaces of the gate electrode; ion implanting boron impurities into the substrate at the junctions to form diffusion stop implants which inhibit diffusion of As; and heating to form activated As source/drain extensions, wherein the diffusion stop implants prevent As diffusion during heating.
Claim 3
Dependent Claim
20 words
The method according to claim 1 , comprising ion implanting B ions or BF 2 ions as the boron impurities.
Claim 4
Dependent Claim
16 words
The method according to claim 2 , comprising ion implanting B ions as the boron impurities.
Claim 5
Dependent Claim
39 words
The method according to claim 3 , comprising ion implanting B ions at a dosage of 1×10 13 to 1×10 14 ions/cm 2 and at an implantation energy of 10 to 20 KeV to form the diffusion stop implants.
Claim 6
Dependent Claim
31 words
The method according to claim 4 , comprising, ion implanting B at an angle of 10° to 45° with respect to a line perpendicular to the upper surface of the substrate.
Claim 7
Dependent Claim
33 words
The method according to claim 1 , comprising ion implanting the boron impurities at an angle of 10° to 45° with respect to a line perpendicular to the upper surface of the substrate.
Claim 8
Dependent Claim
33 words
The method according to claim 1 , comprising ion implanting As at an implantation dosage of 1×10 14 to 1×10 15 ions/cm 2 and at an implantation energy of 2 to 8 KeV.
Claim 9
Dependent Claim
30 words
The method according to claim 1 , comprising heating at a temperature of 1,000° C. to 1,100° C. for 1 second to 10 seconds to activate the As source/drain extensions.
Claim 10
Dependent Claim
37 words
The method according to claim 1 , comprising: forming sidewall spacers on the side surfaces of the gate electrode; ion implanting to form deep source/drain regions; and heating to activate the source/drain extensions and deep source/drain regions.
Claim 11
Dependent Claim
28 words
The method according to claim 1 , comprising ion implanting boron to form the diffusion stop implants prior to ion implanting As to form the source/drain extension implants.
Claim 12
Independent Claim
143 words
A method of manufacturing a semiconductor device, the method comprising: forming a substrate comprising a semiconductor layer of silicon (Si) having a strained lattice on a layer of silicon-germanium (SiGe); forming a gate electrode, with side surfaces, on an upper surface of the substrate with a gate dielectric layer therebetween; ion implanting arsenic (As) into the substrate to form source/drain extension implants each having a continuous implanted junction profile with the strained Si and SiGe layers under the side surfaces of the gate electrode; ion implanting boron impurities into the substrate at the junctions with the SiGe layer to form diffusion stop implants which inhibit diffusion of As in the SiGe layer; and heating to form activated As source/drain extensions, wherein the diffusion stop implants prevent As diffusion during heating thereby maintaining the implanted junction profiles with the strained Si and SiGe layers.
Claim 13
Independent Claim
143 words
A method of manufacturing a semiconductor device, the method comprising: forming a substrate comprising a semiconductor layer of silicon (Si) having a strained lattice on a layer of silicon-germanium (SiGe); forming a gate electrode, with side surfaces, on an upper surface of the substrate with a gate dielectric layer therebetween; ion implanting arsenic (As) into the substrate to form source/drain extension implants each having a continuous implanted junction profile with the strained Si and SiGe layers under the side surfaces of the gate electrode; ion implanting boron impurities into the substrate at the junctions with the SiGe layer to form diffusion stop implants which inhibit diffusion of As in the SiGe layer; and heating to form activated As source/drain extensions, wherein the diffusion stop implants prevent As diffusion during heating thereby maintaining the implanted junction profiles with the strained Si and SiGe layers.
Claim 14
Dependent Claim
20 words
The method according to claim 11 , comprising ion implanting B ions or BF 2 ions as the boron impurities.
Claim 15
Dependent Claim
32 words
The method according to claim 11 , comprising ion implanting boron impurities at an angle of 10° to 45° with respect to a line perpendicular to the upper surface of the substrate.
Claim 16
Dependent Claim
37 words
The method according to claim 11 , comprising: forming sidewall spacers on the side surfaces of the gate electrode; ion implanting to form deep source/drain regions; and heating to activate the source/drain extensions and deep source/drain regions.
Claim 17
Dependent Claim
29 words
The method according to claim 12 , comprising ion implanting B ions to form the diffusion stop implants prior to ion implanting As to form the source/drain extension implants.
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