Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
75 words
A characterization vehicle, comprising: a single die including a device neighborhood testing module for allowing measurement of variations in electrical performance of an active device due to a first plurality of process variations within the active device and a second plurality of process variations affecting an area surrounding the active device, the device neighborhood testing module including: said active test device; and an array of dummy devices within which the active test device is located.
Claim 2
Dependent Claim
75 words
A characterization vehicle, comprising: a single die including a device neighborhood testing module for allowing measurement of variations in electrical performance of an active device due to a first plurality of process variations within the active device and a second plurality of process variations affecting an area surrounding the active device, the device neighborhood testing module including: said active test device; and an array of dummy devices within which the active test device is located.
Claim 3
Dependent Claim
24 words
The characterization vehicle of claim 1 , wherein the device neighborhood testing module includes a plurality of devices having respectively different active area densities.
Claim 4
Dependent Claim
23 words
The characterization vehicle of claim 1 , wherein the device neighborhood testing module includes a plurality of devices having respectively different polysilicon densities.
Claim 5
Dependent Claim
31 words
The characterization vehicle of claim 1 , wherein the device neighborhood testing module includes a plurality of devices, each having a respectively different spacing between a contact and a polysilicon region.
Claim 6
Dependent Claim
27 words
The characterization vehicle of claim 1 , wherein the device neighborhood testing module includes a plurality of devices, each having a respectively different spacing between polysilicon regions.
Claim 7
Dependent Claim
26 words
The characterization vehicle of claim 1 , wherein the device neighborhood testing module includes a plurality of devices, each having a respectively different spacing between contacts.
Claim 8
Dependent Claim
36 words
The characterization vehicle of claim 1 , wherein the single die further comprises process neighborhood testing means for allowing measurement of variations in yield of a product due to a second plurality of within-die pattern variations.
Claim 9
Dependent Claim
37 words
The characterization vehicle of claim 7 , wherein the process neighborhood testing means include a plurality of snake and comb structures arranged to enable measurement of the extent to which polysilicon and active-area pitch cause polysilicon bridging.
Claim 10
Dependent Claim
37 words
The characterization vehicle of claim 7 , wherein the process neighborhood testing means include a plurality of snake and comb structures arranged to enable measurement of the extent to which polysilicon and active-area pitch cause polysilicon bridging.
Claim 11
Dependent Claim
34 words
The characterization vehicle of claim 7 , wherein the process neighborhood testing means include a plurality of structures configured to enable measurement of the effects of etch loading on a plurality of critical dimensions.
Claim 12
Dependent Claim
31 words
The characterization vehicle of claim 7 , wherein the process neighborhood testing means include a plurality of structures configured to enable measurement of the effects of etch loading on sheet resistance.
Claim 13
Dependent Claim
31 words
The characterization vehicle of claim 7 , wherein the process neighborhood testing means include a plurality of structures configured to enable measurement of the effects of etch loading on sheet resistence.
Claim 14
Dependent Claim
28 words
The characterization vehicle of claim 7 , wherein the process neighborhood testing means include a plurality of structures, each including a rectangular diode having a low permeter-to-area ratio.
Claim 15
Dependent Claim
24 words
The characterization vehicle of claim 13 , wherein the plurality of structures further includes a plurality of diodes that have respectively different area-to-perimeter ratios.
Claim 16
Dependent Claim
34 words
The characterization vehicle of claim 7 , wherein the process neighborhood testing means include a plurality of structures configured to enable measurement of the effects of line-width, redundancy and line spacing on via yield.
Claim 17
Dependent Claim
83 words
The characterization vehicle of claim 1 , wherein the dummy devices are dummy transistors, and the device neighborhood testing module includes: a plurality of devices having respectively different active area densities; a plurality of devices having respectively different polysilicon densities; a plurality of devices, each having a respectively different spacing between a contact and a polysilicon region; a plurality of devices, each having a respectively different spacing between polysilicon regions; and a plurality of devices, each having a respectively different spacing between contacts.
Claim 18
Dependent Claim
36 words
The characterization vehicle of claim 16 , wherein the single die further comprises process neighborhood testing means for allowing measurement of variations in yield of a product due to a second plurality of within-die pattern variations.
Claim 19
Dependent Claim
119 words
The characterization vehicle of claim 17 , wherein the process neighborhood testing means include: a plurality of snake and comb structures arranged to enable measurement of the extent to which polysilicon and active-area pitch cause polysilicon bridging; a plurality of structures configured to enable measurement of the effects of etch loading on a plurality of critical dimensions; a plurality of structures configured to enable measurement of the effects of etch loading on sheet resistence; a plurality of structures, each including a rectangular diode having a low permeter-to-area ratio; a plurality of diodes that have respectively different area-to-perimeter ratios; and a plurality of structures configured to enable measurement of the effects of line-width, redundancy and line spacing on via yield.
Claim 20
Dependent Claim
22 words
The characterization vehicle of claim 1 , wherein the single die further comprises a plurality of comb-in-comb structures having asymmetric gate-to-contact spacing.
Claim 21
Independent Claim
116 words
A system for predicting yield of integrated circuits comprising: a) at least one type of characterization vehicle including means for allowing measurement of variations in yield of an integrated circuit due to a plurality of within-die pattern variations; b) a yield model which embodies a layout as defined by the characterization vehicle, said yield model having been subjected to at least one of a plurality of process operations making up a fabrication cycle to be used in fabricating a final integrated circuit product; c) a product layout; and d) an extraction engine for extracting predetermined layout characteristics from the product layout, which characteristics are used in connection with the yield model to produce a yield prediction.
Claim 22
Independent Claim
116 words
A system for predicting yield of integrated circuits comprising: a) at least one type of characterization vehicle including means for allowing measurement of variations in yield of an integrated circuit due to a plurality of within-die pattern variations; b) a yield model which embodies a layout as defined by the characterization vehicle, said yield model having been subjected to at least one of a plurality of process operations making up a fabrication cycle to be used in fabricating a final integrated circuit product; c) a product layout; and d) an extraction engine for extracting predetermined layout characteristics from the product layout, which characteristics are used in connection with the yield model to produce a yield prediction.