Semiconductor device having electrodes containing at least copper nickel phosphorous and tin

Claim 2

A semiconductor device comprising a wiring substrate having a principal surface and a surface opposite thereto, a plurality of first electrodes formed over the opposite surface of said wiring substrate, a plurality of protruding electrodes formed over said plurality of electrodes, respectively, and a semiconductor chip disposed over the principal surface of said wiring substrate and electrically connected to said plurality of protruding electrodes via said first plurality of electrodes, wherein each of said plurality of first electrodes has a first conductor film containing Cu and a second conductor film formed between said first conductor film and each of said protruding electrodes and containing Ni and P, wherein each of said plurality of protruding electrodes is made of a solder containing Sn and any one of Ba, Be, Ca and Mg, wherein said semiconductor chip has, over the principal surface thereof, a plurality of semiconductor elements and a plurality of electrodes, and wherein said plurality of electrodes of said semiconductor chip are electrically connected to said plurality of protruding electrodes via said plurality of first electrodes.

Claim 3

A semiconductor device according to claim 1 , further comprising a plurality of second electrodes over the principal surface of said wiring substrate, said plurality of second electrodes each having: a third conductor film containing Cu; a fourth conductor film formed over said third conductor film and containing Ni and P; and an a fifth conductor film formed over said fourth conductor film and containing Au, said plurality of electrodes of said semiconductor chip being electrically connected to said plurality of first electrodes and said plurality of protruding electrodes via said fifth conductor film.

Claim 4

A semiconductor device according to claim 2 , wherein said plurality of electrodes of said semiconductor chip are electrically connected to said fifth conductor film via an Au wire.

Claim 5

A semiconductor device according to claim 2 , wherein said plurality of electrodes of said semiconductor chip are electrically connected to said fifth conductor film via an Au protruding electrode.

Claim 6

A semiconductor device according to claim 2 , wherein said plurality of electrodes of said semiconductor chip are electrically connected to said fifth conductor film via an Au-containing conductor.

Claim 7

A semiconductor device according to claim 1 , wherein said wiring substrate has an insulating layer made of an organic resin.

Claim 8

A semiconductor device according to claim 1 , wherein said semiconductor chip is fixed onto said wiring substrate via an adhesive material.

Claim 9

A semiconductor device according to claim 1 , wherein said plurality of protruding electrodes are arranged in the array form made of plurality of rows and columns.

Claim 10

An electronic device comprising a wiring substrate, a plurality of first and second electrodes formed over said wiring substrate, and first and second semiconductor devices disposed over said wiring substrate and each having a plurality of electrodes, wherein each of said plurality of first electrodes has a first conductor film formed over said wiring substrate and containing Cu and a second conductor film formed over said first conductor film and containing Ni and P, wherein each of said plurality of second electrodes hay, a third conductor film formed over said wiring substrate and containing Cu, a fourth conductor film formed over said third conductor film and containing Ni and P, and a fifth conductor film formed over said fourth conductor film and containing Au, wherein said plurality of electrodes of said first semiconductor device are electrically connected to said plurality of first electrodes by a plurality of solders containing Sn and any one of Ba, Be, Ca and Mg, respectively, and wherein said plurality of electrodes of said second semiconductor device are electrically connected to said plurality of second electrodes, respectively, via a plurality of Au-containing connectors.

Claim 11

An electronic device comprising a wiring substrate, a plurality of first and second electrodes formed over said wiring substrate, and first and second semiconductor devices disposed over said wiring substrate and each having a plurality of electrodes, wherein each of said plurality of first electrodes has a first conductor film formed over said wiring substrate and containing Cu and a second conductor film formed over said first conductor film and containing Ni and P, wherein each of said plurality of second electrodes hay, a third conductor film formed over said wiring substrate and containing Cu, a fourth conductor film formed over said third conductor film and containing Ni and P, and a fifth conductor film formed over said fourth conductor film and containing Au, wherein said plurality of electrodes of said first semiconductor device are electrically connected to said plurality of first electrodes by a plurality of solders containing Sn and any one of Ba, Be, Ca and Mg, respectively, and wherein said plurality of electrodes of said second semiconductor device are electrically connected to said plurality of second electrodes, respectively, via a plurality of Au-containing connectors.

Claim 12

An electronic device according to claim 9 , wherein said first conductor film and said third conductor film are integrally formed over said wiring substrate.

Claim 13

An electronic device according to claim 9 , wherein said plurality of Au-containing connectors are a plurality of Au wires bonded to said plurality of electrodes of said second semiconductor device and said plurality of second electrodes, respectively.

Claim 14

An electronic device according to claim 9 , wherein said plurality of Au-containing connectors are Au protruding electrodes bonded to said plurality of electrodes of said second semiconductor device, respectively and pressure-bonded to said plurality of second electrodes.

Claim 15

An electronic device according to claim 9 , wherein said wiring substrate has an insulating layer made of an organic resin.

Claim 16

An electronic device according to claim 9 , wherein an alloy layer containing Sn and Ni exists between said second conductor film of said plurality of electrodes and each of said plurality of solders.

Claim 17

A semiconductor device comprising a first wiring substrate, a plurality of first electrodes formed over said first wiring substrate, a second wiring substrate, a plurality of second electrodes formed over said second wiring substrate, a plurality of solder protruding electrodes connected between said plurality of first electrodes and said plurality of second electrodes, respectively, and a semiconductor chip electrically connected to said plurality of second electrodes via said plurality of first electrodes and said plurality of solder protruding electrodes, wherein each of said plurality of first electrodes is formed over said first wiring substrate, and has a first conductor film containing Cu and a second conductor film formed over said first conductor film and containing Ni and P, wherein each of said plurality of solder protruding electrodes contains Sn and any one of Ba, Be, Ca and Mg, and wherein said second wiring substrate has a thermal expansion coefficient greater than that of said semiconductor chip.

Claim 18

A semiconductor device comprising a first wiring substrate, a plurality of first electrodes formed over said first wiring substrate, a second wiring substrate, a plurality of second electrodes formed over said second wiring substrate, a plurality of solder protruding electrodes connected between said plurality of first electrodes and said plurality of second electrodes, respectively, and a semiconductor chip electrically connected to said plurality of second electrodes via said plurality of first electrodes and said plurality of solder protruding electrodes, wherein each of said plurality of first electrodes is formed over said first wiring substrate, and has a first conductor film containing Cu and a second conductor film formed over said first conductor film and containing Ni and P, wherein each of said plurality of solder protruding electrodes contains Sn and any one of Ba, Be, Ca and Mg, and wherein said second wiring substrate has a thermal expansion coefficient greater than that of said semiconductor chip.

Claim 19

A semiconductor device according to claim 15 , wherein said semiconductor chip has a first principal surface fixed onto said first wiring substrate via an adhesive material, and said plurality of solder protruding electrodes are disposed between the first principal surface of said semiconductor chip and said second wiring substrate.