Method and apparatus for monitoring the power of a multi-wavelength optical signal

Claim 2

A detector for detecting a light beam having a first wavelength of light and a second wavelength of light, and for providing an indication of a change in power in the first wavelength of light and/or the second wavelength of light, the detector comprising a first absorbing layer for absorbing a first portion of the first wavelength of light and a second portion of the second wavelength of light, the first absorbing layer having a first conductivity type; a second absorbing layer situated below the first absorbing layer for absorbing a third portion of the second wavelength of light and a fourth portion of the first wavelength of light, the second absorbing layer having the first conductivity type; an intermediate layer situated between the first absorbing layer and the second absorbing layer, the intermediate layer having a second conductivity type; and providing means for providing an indication of a change in power in the first wavelength of light and/or the second wavelength of light using a measure of the light absorption in the first absorbing layer and a measure of the light absorption in the second absorbing layer.

Claim 3

A detector according to claim 1 wherein the first portion is a majority of the first wavelength of light, the second portion is a minority of the second wavelength of light.

Claim 4

A detector according to claim 2 wherein the third portion is a majority of the second wavelength of light, and the fourth portion is a minority of the first wavelength of light.

Claim 5

A detector according to claim 1 wherein the first absorbing layer has a higher bandgap than the second absorbing layer.

Claim 6

A detector according to claim 4 wherein the first absorbing layer is AlGaAs and the second absorbing layer is GaAs.

Claim 7

A detector according to claim 4 wherein the intermediate layer has a higher bandgap than the second absorbing layer.

Claim 8

A detector according to claim 1 wherein the first absorbing layer and the second absorbing layer each have a layer thickness, and wherein the layer thickness of the first absorbing layer is less than the layer thickness of the second absorbing layer.

Claim 9

A detector according to claim 1 wherein the first absorbing layer and the second absorbing layer each have a layer thickness, wherein the layer thickness of the first absorbing layer is set so that the first absorbing layer absorbs a majority of the first wavelength of light and passes a minority of the first wavelength of light, and the layer thickness of the second absorbing layer is set so that the second absorbing layer absorbs a majority of the second wavelength of light.

Claim 10

A detector according to claim 1 wherein the first absorbing layer has the same bandgap as the second absorbing layer.

Claim 11

A detector according to claim 9 wherein the first absorbing layer and the second absorbing layer are silicon.

Claim 12

A detector according to claim 10 wherein the first absorbing layer and the second absorbing layer each have a layer thickness, and wherein the layer thickness of the first absorbing layer is less than the layer thickness of the second absorbing layer.

Claim 13

A detector according to claim 10 wherein the first absorbing layer and the second absorbing layer each have a layer thickness, wherein the layer thickness of the first absorbing layer is set so that the first absorbing layer absorbs a majority of the first wavelength of light and passes a minority of the first wavelength of light, and the layer thickness of the second absorbing layer is set so that the second absorbing layer absorbs a majority of the second wavelength of light.

Claim 14

A detector according to claim 1 wherein the first absorbing layer and the second absorbing layer each generate one or more carriers when absorbing light, the intermediate layer being positioned directly adjacent to the first absorbing layer to form a first PN junction that collects the one or more carriers generated in the first absorbing layer.

Claim 15

A detector according to claim 13 wherein the intermediate layer is positioned directly adjacent the second absorbing layer to form a second PN junction that collects the one or more carriers generated in the second absorbing layer.

Claim 16

A detector according to claim 14 wherein the first PN junction produces a first output signal and the second PN junction produces a second output signal, the providing means using a ratio of the first output signal and the second output signal to provide an indication of a change in power in the first wavelength of light and/or the second wavelength of light.

Claim 17

A detector according to claim 15 wherein the providing means uses the ratio of the first output signal and the second output signal as well as a sum of the first output signal and the second output signal to provide an indication of a change in power in the first wavelength of light and/or the second wavelength of light.

Claim 18

A detector according to claim 1 wherein the first wavelength of light is produced by a first optoelectronic emitter and the second wavelength of light is produced by a second optoelectronic emitter.

Claim 19

A detector for detecting a light beam having two or more wavelengths of light, and for providing an indication of a change in power in at least one or the two or more wavelengths of light, the detector comprising a first absorbing layer for absorbing a different portion of each of the two or more wavelengths of light; a second absorbing layer situated below the first absorbing layer for absorbing substantially a remaining portion of each of the two or more wavelengths of light; and providing means for providing an indication of a change in power in at least one of the two or more wavelengths of light using a measure of the light absorption in the first absorbing layer and a measure of the light absorption in the second absorbing layer.

Claim 20

A detector for detecting a light beam having two or more wavelengths of light, and for providing an indication of a change in power in at least one or the two or more wavelengths of light, the detector comprising a first absorbing layer for absorbing a different portion of each of the two or more wavelengths of light; a second absorbing layer situated below the first absorbing layer for absorbing substantially a remaining portion of each of the two or more wavelengths of light; and providing means for providing an indication of a change in power in at least one of the two or more wavelengths of light using a measure of the light absorption in the first absorbing layer and a measure of the light absorption in the second absorbing layer.

Claim 25

A system according to claim 20 wherein the first portion is a majority of the first wavelength of light, and, the second portion is a minority of the second wavelength of light.

Claim 26

A system according to claim 21 wherein the third portion is a majority of the second wavelength of light, and the fourth portion is a minority of the first wavelength of light.

Claim 27

A system according to claim 20 wherein said providing means uses a ratio of the measure of the light absorption in the first absorbing layer and the measure of the light absorption in the second absorbing layer.

Claim 28

A system according to claim 23 wherein said providing means further uses a sum of the measure of the light absorption in the first absorbing layer and the measure of the light absorption in the second absorbing layer.

Claim 29

An optoelectronic transmitter for receiving a first and a second electrical input signal and for transmitting a corresponding first and second optical output signal in a common light beam, the first and the second optical output signals having different wavelengths, the optoelectronic transmitter comprising: a first modulator for modulating the first electrical input signal with a first electrical power monitor signal to produce a first electrical modulated signal, the first electrical input signal operating at a first frequency, and the first electrical power monitor signal operating at a frequency that is less than the first frequency; a second modulator for modulating the second electrical input signal with a second electrical power monitor signal to produce a second electrical modulated signal, the second electrical input signal operating at a second frequency, and the second electrical power monitor signal operating at a frequency that is less than the second frequency; a first optoelectronic emitter for receiving the first electrical modulated signal and for transmitting a corresponding first optical output signal; a second optoelectronic emitter for receiving the second electrical modulated signal and for transmitting a corresponding second optical output signal; an optical combiner for combining the first optical output signal and the second optical output signal into the common light beam; an optoelectronic detector for monitoring the common light beam and for producing a corresponding electrical detection signal; means for separating out the first power monitor signal and the second power monitor signal from the electrical detection signal, resulting in a first detected power monitor signal and a second detected power monitor signal; and means for adjusting the power of the first optoelectronic emitter and the second optoelectronic emitter based on one or more characteristics of the first detected power monitor signal and the second detected power monitor signal.

Claim 30

An optoelectronic transmitter for receiving a first and a second electrical input signal and for transmitting a corresponding first and second optical output signal in a common light beam, the first and the second optical output signals having different wavelengths, the optoelectronic transmitter comprising: a first modulator for modulating the first electrical input signal with a first electrical power monitor signal to produce a first electrical modulated signal, the first electrical input signal operating at a first frequency, and the first electrical power monitor signal operating at a frequency that is less than the first frequency; a second modulator for modulating the second electrical input signal with a second electrical power monitor signal to produce a second electrical modulated signal, the second electrical input signal operating at a second frequency, and the second electrical power monitor signal operating at a frequency that is less than the second frequency; a first optoelectronic emitter for receiving the first electrical modulated signal and for transmitting a corresponding first optical output signal; a second optoelectronic emitter for receiving the second electrical modulated signal and for transmitting a corresponding second optical output signal; an optical combiner for combining the first optical output signal and the second optical output signal into the common light beam; an optoelectronic detector for monitoring the common light beam and for producing a corresponding electrical detection signal; means for separating out the first power monitor signal and the second power monitor signal from the electrical detection signal, resulting in a first detected power monitor signal and a second detected power monitor signal; and means for adjusting the power of the first optoelectronic emitter and the second optoelectronic emitter based on one or more characteristics of the first detected power monitor signal and the second detected power monitor signal.

Claim 31

An optoelectronic transmitter according to claim 25 wherein the frequency of the first electrical power monitor signal is substantially less than the first frequency of the first electrical input signal, and the frequency of the second electrical power monitor signal is substantially less than the second frequency of the second electrical input signal.

Claim 32

An optoelectronic transmitter according to claim 26 wherein the frequency of the first electrical power monitor signal is different from the frequency of the second electrical power monitor signal.

Claim 33

An optoelectronic transmitter according to claim 25 wherein the first electrical input signal and the first electrical power monitor signal each have an amplitude, and wherein the amplitude of the first electrical power monitor signal is less than the amplitude of the first electrical input signal.

Claim 34

An optoelectronic transmitter according to claim 28 wherein the second electrical input signal and the second electrical power monitor signal each have an amplitude, and wherein the amplitude of the second electrical power monitor signal is less than the amplitude of the second electrical input signal.

Claim 35

An optoelectronic transmitter according to claim 25 wherein the optoelectronic detector is a wide band detector capable of detecting the first optical output signal and the second optical output signal.

Claim 36

An optoelectronic transmitter according to claim 25 wherein the first modulator amplitude modulates the first electrical input signal with the first electrical power monitor signal to produce a first electrical amplitude modulated signal, and the second modulator amplitude modulates the second electrical input signal with the second electrical power monitor signal to produce a second electrical amplitude modulated signal.

Claim 37

An optoelectronic transmitter according to claim 25 further comprising: a third electrical input signal and a fourth electrical input signal; the first modulator modulating the third electrical input signal with the first electrical power monitor signal to produce a third electrical modulated signal, the third electrical input signal operating at a third frequency, and the first electrical power monitor signal operating at a frequency that is less than the third frequency; the second modulator modulating the fourth electrical input signal with the second electrical power monitor signal to produce a fourth electrical modulated signal, the fourth electrical input signal operating at a fourth frequency, and the second electrical power monitor signal operating at a frequency that is less than the fourth frequency; a third optoelectronic emitter for receiving the third electrical modulated signal and for transmitting a corresponding third optical signal; a fourth optoelectronic emitter for receiving the fourth electrical modulated signal and for transmitting a corresponding fourth optical signal; and the optical combiner combining the first optical signal, the second optical signal, the third optical signal and the fourth optical signal into a common light beam.

Claim 38

An optoelectronic transmitter according to claim 32 wherein the optoelectronic detector includes: a first absorbing layer for absorbing a different portion of each of the first, second, third and fourth optical signals; a second absorbing layer situated below the first absorbing layer for absorbing substantially a remaining portion of each of the first, second, third and fourth optical signals; processing means for determining whether the first optical signal or the fourth optical signal had an increase or decrease in power level, or whether the second optical signal or third optical had an increase or decrease in power level, using a measure of the light absorption in the first absorbing layer and a measure of the light absorption in the second absorbing layer.

Claim 39

An optoelectronic transmitter according to claim 33 wherein: said separating means separates out the first power monitor signal from the first optical signal and the third optical signal and the second power monitor signal from the second optical signal and the fourth optical signal; and said adjusting means adjusting the power of the first optoelectronic emitter if the processing means determines that the first optical signal or fourth optical signal had an increase or decrease in power level and said first power monitor signal indicates that said first optical signal or third optical signal had an increase or decrease in power level; said adjusting means adjusting the power of the second optoelectronic emitter if the processing means determines that the second optical signal or third optical signal had an increase or decrease in power level and said second power monitor signal indicates that said second optical signal or fourth optical signal had an increase or decrease in power level; said adjusting means adjusting the power of the third optoelectronic emitter if the processing means determines that the second optical signal or third optical signal had an increase or decrease in power level and said first power monitor signal indicates that said first optical signal or third optical signal had an increase or decrease in power level; and said adjusting means adjusting the power of the fourth optoelectronic emitter if the processing means determines that the first optical signal or fourth optical signal had an increase or decrease in power level and said second power monitor signal indicates that said second optical signal or fourth optical signal had an increase or decrease in power level.