Atomic layer deposition using organometallic complex with β-diketone ligand
Abstract
Abstract An atomic layer deposition (ALD) method, whereby an organometallic complex with a beta-diketone ligand is chemically adsorbed onto a substrate and oxidized by activated oxygen radicals to deposit an atomic metal oxide layer on the substrate, uses reactive oxygen radicals generated using plasma and an organometallic complex having a beta-diketone ligand as a precursor, which could not be used in a thermal ALD method using oxygen or water as an oxidizing agent, to address and solve the problem of the removal of organic substances using organometallic complexes with beta-diketone ligands, thereby enabling diversification of the precursors for ALD and formation of excellent oxide films at low temperatures.
Inventors
- 👤 Jung-hyun Lee
- 👤 Dae-sig Kim
- 👤 Yo-sep Min
- 👤 Young-Jin Cho
Bibliographic Details
Claims Analysis
Total Claims: 7References Cited (Backward Citations)
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