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Atomic layer deposition using organometallic complex with β-diketone ligand

Assignee: Samsung Electronics Co Ltd
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Filing: 2002-06-04
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Granted: 2004-06-22
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Expires: 2022-06-04
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Abstract

Abstract An atomic layer deposition (ALD) method, whereby an organometallic complex with a beta-diketone ligand is chemically adsorbed onto a substrate and oxidized by activated oxygen radicals to deposit an atomic metal oxide layer on the substrate, uses reactive oxygen radicals generated using plasma and an organometallic complex having a beta-diketone ligand as a precursor, which could not be used in a thermal ALD method using oxygen or water as an oxidizing agent, to address and solve the problem of the removal of organic substances using organometallic complexes with beta-diketone ligands, thereby enabling diversification of the precursors for ALD and formation of excellent oxide films at low temperatures.

Inventors

  • 👤 Jung-hyun Lee
  • 👤 Dae-sig Kim
  • 👤 Yo-sep Min
  • 👤 Young-Jin Cho

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 02:16
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45536; C23C16/45542; H; H10; H10P; H10P14/00; H10P14/20; C23C16/22; C23C16/30; C23C16/40; C23C16/405; C23C16/45553; C23C16/50; C23C16/505; C23C16/509; C23C16/5096

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 40 words
An atomic layer deposition (ALD) method comprising chemically adsorbing an organometallic complex with a β-diketone ligand onto a substrate and oxidizing the chemically adsorbed organometallic complex using activated oxygen radicals to deposit an atomic metal oxide layer on the substrate.
Claim 2
Dependent Claim 40 words
An atomic layer deposition (ALD) method comprising chemically adsorbing an organometallic complex with a β-diketone ligand onto a substrate and oxidizing the chemically adsorbed organometallic complex using activated oxygen radicals to deposit an atomic metal oxide layer on the substrate.
Claim 3
Dependent Claim 41 words
The method as claimed in claim 1 , wherein the activated oxygen radicals are generated by reacting plasma as an energy source with at least one oxygen-containing gas selected from the group consisting of oxygen, ozone, nitrogen monoxide, and water vapor.
Claim 4
Dependent Claim 33 words
The method as claimed in claim 2 , wherein the at least one oxygen containing gas is irradiated with ultraviolet (UV) light during reaction with the plasma to generate the activated oxygen radicals.
Claim 5
Dependent Claim 147 words
The method as claimed in claim 1 , wherein the organometallic complex with a β-diketone ligand has formula (1) below: wherein is a metal ion with a valence number of 1 to 6; X is O, NH, or S; Y is O, N, or S; and R 1 , R 2 , and R 3 are independently a hydrogen atom, a linear or branched unsubstituted alkyl group having 2 to 10 carbon atoms, a linear or branched alkoxy group-substituted alkyl group having 2 to 10 carbon atoms, a linear or branched alkoxyalkyleneoxy group-substituted alkyl group having 2 to 10 carbon atoms, or an alkylamine group having 2 to 10 carbon atoms; I is 1 or 2; L is an anionic ligand coordinated to metal M; m is an integer from 0 to 5; A is a neutral ligand; and n is an integer from 0 to 4.
Claim 6
Dependent Claim 50 words
The method as claimed in claim 4 , wherein; in formula (1), L is an alkoxy group having 1 to 10 carbon atoms, an alkyl group having 1 to 5 carbon atoms or an alkylamine or alkylsulfide group having 1 to 10 carbon atoms, and A is oligoether or amine.
Claim 7
Dependent Claim 52 words
The method as claimed in claim 1 , wherein the organometallic complex with a β-diketone ligand is selected from the group consisting of compounds having formulae (2) through (13) below: where, i-OPr stand for isopropyl mthd stands for methoxytetraethylheptanedionate metmhd stands for methoxyethoxytetramethylheptanedionate dmpd stands for dimethylpentadiol, and depd stands for diethylpentadiol.

References Cited (Backward Citations)

US5355212A Cited
US6175645B1 Cited
WO2000034549A2 Cited
KR20000039578A Cited

USPTO Annuity & Maintenance Windows

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