US6744083B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Submicron MOSFET having asymmetric channel profile
Assignee: Intellectual Ventures Holding 40 LLC
•
Filing: 2002-10-01
•
Granted: 2004-06-01
•
Expires: 2022-10-01
Abstract
Abstract A MOSFET semiconductor device having an asymmetric channel region between the source region and the drain region. In one embodiment, the device comprises a mesa structure on a silicon substrate with the source region being in the substrate and the mesa structure extending from the source region and substrate. The asymmetric channel region can include silicon abutting the source region and a heterostructure material such as Si1-xGex extending to and abutting the drain region. The mole fraction of Ge can increase towards the drain region either uniformly or in steps. In one embodiment, the doping profile of the channel region is non-uniform with higher doping near the source region and lower doping near the drain region.
Inventors
- 👤 Xiangdong Chen
- 👤 Sanjay Kumar Banerjee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:50
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6728; B; B82; B82Y; B82Y10/00; H10D30/01; H10D30/021; H10D30/025; H10D30/601; H10D30/63; H10D30/751; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D62/235; H10D62/299; H10D62/307; H10D62/80; H10D62/82; H10D62/822; H10D62/83; H10D62/832
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
94 words
A MOSFET semiconductor device comprising a semiconductor body having a silicon source region of one conductivity type, a drain region of the one conductivity type, a channel region comprising silicon and a heterostructure material of opposite conductivity type between the source region and the drain region, the channel region being asymmetrical in profile between the source region and the drain region with the channel being having a non-uniform doping profile with higher doping near the source region and lower doping near the drain region, and a gate for controlling conduction of the channel region.
Claim 2
Dependent Claim
94 words
A MOSFET semiconductor device comprising a semiconductor body having a silicon source region of one conductivity type, a drain region of the one conductivity type, a channel region comprising silicon and a heterostructure material of opposite conductivity type between the source region and the drain region, the channel region being asymmetrical in profile between the source region and the drain region with the channel being having a non-uniform doping profile with higher doping near the source region and lower doping near the drain region, and a gate for controlling conduction of the channel region.
Claim 3
Dependent Claim
16 words
The MOSFET semiconductor device as defined by claim 1 wherein the one conductivity type is p-type.
Claim 4
Dependent Claim
20 words
The MOSFET semiconductor device as defined by claim 1 wherein the device comprises a mesa structure on a semiconductor substrate.
Claim 5
Dependent Claim
20 words
The MOSFET semiconductor device as defined by claim 1 wherein the device comprises a planar structure in a semiconductor substrate.
Claim 6
Dependent Claim
88 words
A MOSFET semiconductor device comprising a semiconductor body having a silicon source region of one conductivity type, a drain region of the one conductivity type, a channel region of opposite conductivity type between the source region and the drain region, comprising silicon and a heterostructure material with the silicon abutting the source region and positioned between the source region and the heterostructure material, the channel region being asymmetrical in profile between the source region and the drain region, and a gate for controlling conduction of the channel region.
Claim 7
Dependent Claim
88 words
A MOSFET semiconductor device comprising a semiconductor body having a silicon source region of one conductivity type, a drain region of the one conductivity type, a channel region of opposite conductivity type between the source region and the drain region, comprising silicon and a heterostructure material with the silicon abutting the source region and positioned between the source region and the heterostructure material, the channel region being asymmetrical in profile between the source region and the drain region, and a gate for controlling conduction of the channel region.
Claim 8
Dependent Claim
19 words
The MOSFET semiconductor device as defined by claim 5 wherein the heterostructure material comprises Si 1-x Ge x .
Claim 9
Dependent Claim
20 words
The MOSFET semiconductor device as defined by claim 6 wherein the mole fraction of Ge increases toward the drain region.
Claim 10
Dependent Claim
15 words
The MOSFET semiconductor device as defined by claim 7 wherein the mole fraction increases uniformly.
Claim 11
Dependent Claim
16 words
The MOSFET semiconductor device as defined by claim 7 wherein the mole fraction increases in steps.
Claim 12
Dependent Claim
107 words
A MOSFET semiconductor device comprising: a) a silicon substrate, b) a source region in the substrate of one conductivity type, c) a drain region of the one conductivity type, d) a channel region of opposite conductivity type between the source region and the drain region, the channel region and the drain region being in a mesa structure extending from the source region and the silicon substrate, the channel region comprising silicon abutting the source region and a heterostructure material abutting the drain region, e) a gate insulator abutting the channel region, and f) a conductive gate abutting the gate insulator for controlling conduction of the channel region.
Claim 13
Dependent Claim
107 words
A MOSFET semiconductor device comprising: a) a silicon substrate, b) a source region in the substrate of one conductivity type, c) a drain region of the one conductivity type, d) a channel region of opposite conductivity type between the source region and the drain region, the channel region and the drain region being in a mesa structure extending from the source region and the silicon substrate, the channel region comprising silicon abutting the source region and a heterostructure material abutting the drain region, e) a gate insulator abutting the channel region, and f) a conductive gate abutting the gate insulator for controlling conduction of the channel region.
Claim 14
Dependent Claim
18 words
The MOSFET semiconductor device as defined by claim 10 wherein the source region extends into the mesa structure.
Claim 15
Dependent Claim
19 words
The MOSFET semiconductor device as defined by claim 10 wherein the heterostructure material comprises Si 1-x Ge x .
Claim 16
Dependent Claim
20 words
The MOSFET semiconductor device as defined by claim 12 wherein the mole fraction of Ge increases toward the drain region.
Claim 17
Dependent Claim
15 words
The MOSFET semiconductor device as defined by claim 13 wherein the mole fraction increases uniformly.
Claim 18
Dependent Claim
16 words
The MOSFET semiconductor device as defined by claim 13 wherein the mole fraction increases in steps.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-06-01 | 2007-12-01 | 2008-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-06-01 | 2011-12-01 | 2012-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-06-01 | 2015-12-01 | 2016-06-01 | $7700.00 | Window Closed / Lapsed |