Manufacturing of a thin film inorganic light emitting diode

Claim 3

A method according to claim 1 wherein said precipitation of step (1) is performed according to the double jet principle whereby a first solution containing zinc ions and a second solution containing sulfide ions are added together to a third solution.

Claim 4

A method according to claim 2 wherein said first solution also contains said dopant ions.

Claim 5

A method according to claim 1 wherein said dopant ions are Cu 2+ ions.

Claim 6

A method according to claim 1 wherein said dopant ions are Cu + ions.

Claim 7

A method according to claim 1 wherein said dopant ions are Mn 2+ ions.

Claim 8

Method according to claim 1 wherein said washing of said dispersion of doped ZnS is performed by an ultrafiltration step, ultrafiltration step and a diafiltration step, or a diafiltration step.

Claim 9

Method according to claim 7 wherein said ultrafiltration step, ultrafiltration step and a diafiltration step, or a diafiltration step is (are) performed in the presence of a compound preventing agglomeration of nanoparticles.

Claim 10

A method according to claim 8 wherein said compound preventing the agglomeration of nanoparticles is a polyphosphate or polyphosphoric acid.

Claim 11

A method according to claim 1 wherein said first electrode is an Indium Tin Oxide (ITO) electrode.

Claim 12

A method according to claim 1 wherein said first electrode is a foil comprising a polythiophene/polyanion complex.

Claim 13

A method according to claim 11 wherein said polythiophene/polyanion complex is a poly(3,4-ethylenedioxythiophene)/polystyrene sulphonate complex.

Claim 14

A method according to claim 1 wherein said second conductive electrode is an aluminum electrode applied by vacuum deposition.

Claim 15

A Thin Film Inorganic Light Emitting Diode device manufactured according to a method for manufacturing a Thin Film Inorganic Light Emitting Diode device, said method comprising the following steps, in order: (1) preparing a nanoparticle dispersion of ZnS doped with a luminescent center by precipitation from appropriate aqueous solutions comprising zinc ions, sulfide ions and dopant ions, (2) washing said dispersion of doped ZnS to remove non-precipitated ions, (3) coating onto a first conductive electrode said washed dispersion of doped ZnS, optionally after admixture with a binder, and (4) applying on top of said coated layer resulting from step (3) a second conductive electrode, with the proviso that at least one of said first and second electrodes is transparent.

Claim 16

A Thin Film Inorganic Light Emitting Diode device manufactured according to a method for manufacturing a Thin Film Inorganic Light Emitting Diode device, said method comprising the following steps, in order: (1) preparing a nanoparticle dispersion of ZnS doped with a luminescent center by precipitation from appropriate aqueous solutions comprising zinc ions, sulfide ions and dopant ions, (2) washing said dispersion of doped ZnS to remove non-precipitated ions, (3) coating onto a first conductive electrode said washed dispersion of doped ZnS, optionally after admixture with a binder, and (4) applying on top of said coated layer resulting from step (3) a second conductive electrode, with the proviso that at least one of said first and second electrodes is transparent.