Patent US6733956B2 successfully refreshed from Google Patents.
US6733956B2
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Method for making programmable resistance memory element
Assignee: BAE Systems Information and Electronic Systems Integration Inc
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Filing: 2002-02-08
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Granted: 2004-05-11
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Expires: 2022-02-08
Abstract
Abstract A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode in a slot-like opening formed in a dielectric material. A method of making the opening using a silylated photoresist.
Inventors
- 👤 Jon Maimon
- 👤 Andrew Pomerene
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:11
CPC Classifications
G; G11; G11C; G11C13/00; G11C13/0002; G11C13/0004; H; H10; H10N; H10N70/00; H10N70/011; H10N70/061; H10N70/068; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/828; H10N70/881; H10N70/882; H10N70/8828
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
145 words
A method for making an opening in a layer of a first material of a semiconductor device, comprising the steps of: providing said layer of said first material; forming a layer of a second material over said layer of said first material, said second material being photoresist; removing a portion of said layer of said second material to form a photoresist mask over said layer of said first material; silylating said photoresist mask to form a top silylated portion and a sidewall silylated portion; forming a layer of a third material over said top silylated portion, over said sidewall silylated portion and over an exposed portion of said layer of said first material; removing a portion of said layer of said third material; removing said top and sidewall silylated portions; and removing a portion of said layer of said first material to form said opening.
Claim 2
Independent Claim
145 words
A method for making an opening in a layer of a first material of a semiconductor device, comprising the steps of: providing said layer of said first material; forming a layer of a second material over said layer of said first material, said second material being photoresist; removing a portion of said layer of said second material to form a photoresist mask over said layer of said first material; silylating said photoresist mask to form a top silylated portion and a sidewall silylated portion; forming a layer of a third material over said top silylated portion, over said sidewall silylated portion and over an exposed portion of said layer of said first material; removing a portion of said layer of said third material; removing said top and sidewall silylated portions; and removing a portion of said layer of said first material to form said opening.
Claim 3
Dependent Claim
12 words
The method of claim 1 , wherein said third material is photoresist.
Claim 4
Dependent Claim
36 words
The method of claim 1 , further comprising the step of: after removing said portion of said layer of said first material, removing said layer of said second material and said layer of said third material.
Claim 5
Dependent Claim
13 words
The method of claim 1 , wherein said first material comprises a dielectric.
Claim 6
Dependent Claim
13 words
The method of claim 1 , wherein said first material comprises an oxide.
Claim 7
Independent Claim
179 words
A method for making a programmable resistance memory element, comprising the steps of: providing a layer of a conductive material; forming a layer of a first material over said layer of said conductive material; forming a layer of a second material over said layer of said first material, said second material being photoresist; removing a portion of said layer of said second material to form a photoresist mask over said layer of said first material; silylating said photoresist mask to form a top silylated portion and a sidewall silylated portion; forming a layer of a third material over said top silylated portion, over said sidewall silylated portion and over an exposed portion of said layer of said first material; removing a portion of said layer of said third material; removing said top and sidewall silylated portions; removing a portion of said layer of said first material to form an opening in said layer of said first material; and depositing a programmable resistance material into said opening, said programmable resistance material in communication with said layer of said conductive material.
Claim 8
Independent Claim
179 words
A method for making a programmable resistance memory element, comprising the steps of: providing a layer of a conductive material; forming a layer of a first material over said layer of said conductive material; forming a layer of a second material over said layer of said first material, said second material being photoresist; removing a portion of said layer of said second material to form a photoresist mask over said layer of said first material; silylating said photoresist mask to form a top silylated portion and a sidewall silylated portion; forming a layer of a third material over said top silylated portion, over said sidewall silylated portion and over an exposed portion of said layer of said first material; removing a portion of said layer of said third material; removing said top and sidewall silylated portions; removing a portion of said layer of said first material to form an opening in said layer of said first material; and depositing a programmable resistance material into said opening, said programmable resistance material in communication with said layer of said conductive material.
Claim 9
Dependent Claim
12 words
The method of claim 6 , wherein said third material is photoresist.
Claim 10
Dependent Claim
36 words
The method of claim 6 , further comprising the step of: after removing said portion of said layer of said first material, removing said layer of said second material and said layer of said third material.
Claim 11
Dependent Claim
13 words
The method of claim 6 , wherein said first material comprises a dielectric.
Claim 12
Dependent Claim
13 words
The method of claim 6 , wherein said first material comprises an oxide.
Claim 13
Dependent Claim
69 words
The method of claim 6 , wherein said providing said layer of said conductive material comprising the steps of: providing a first dielectric material; forming a sidewall surface in said first dielectric material; forming said layer of said conductive material over said sidewall surface; forming a second dielectric material over said layer of said first conductive material wherein an edge of said layer of said conductive material is exposed.
Claim 14
Dependent Claim
21 words
The method of claim 6 , wherein said layer of said conductive material is a sidewall spacer or a sidewall liner.
Claim 15
Dependent Claim
16 words
The method of claim 6 , wherein said programmable resistance material comprises a phase change material.
Claim 16
Dependent Claim
15 words
The method of claim 6 , wherein said programmable resistance material comprises a chalcogen element.
References Cited (Backward Citations)
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