Magnetic element utilizing spin transfer and an MRAM device using the magnetic element

Claim 2

A magnetic element comprising: a first pinned layer, the pinned layer being ferromagnetic and having a first magnetization, the first magnetization being pinned in a first direction; a nonmagnetic spacer layer, the nonmagnetic spacer layer being conductive; a free layer, the first nonmagnetic spacer layer residing between the first pinned layer and the free layer, the free layer being ferromagnetic and having a second magnetization; a barrier layer, the barrier layer being an insulator and having a thickness that allows tunneling through the barrier layer; a second pinned layer, the second pinned layer being ferromagnetic and having a third magnetization pinned in a second direction, the barrier layer being between the free layer and the second pinned layer; wherein the magnetic element is configured to allow the second magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.

Claim 3

The magnetic element of claim 1 wherein the first direction is opposite to the second direction.

Claim 4

The magnetic element of claim 1 further comprising: a first antiferromagnetic layer adjacent to the first pinned layer, the first antiferromagnetic layer for pinning the first magnetization of the first pinned layer; and a second antiferromagnetic layer adjacent to the second pinned layer, the second antiferromagnetic layer for pinning the third magnetization of the second pinned layer.

Claim 5

The magnetic element of claim 3 wherein the first antiferromagnetic layer and the second antiferromagnetic layer include PtMn.

Claim 6

The magnetic element of claim 3 wherein the first antiferromagnetic layer has a first blocking temperature, the second antiferromagnetic layer has a second blocking temperature, the second blocking temperature being different from the first blocking temperature.

Claim 7

The magnetic element of claim 1 wherein the first pinned layer is a synthetic pinned layer.

Claim 8

The magnetic element of claim 1 wherein the second pinned layer is a synthetic pinned layer.

Claim 9

The magnetic element of claim 1 wherein the magnetic element has a width of less than or equal to 200 nm.

Claim 10

The magnetic element of claim 8 wherein the magnetic element has a width of approximately 100 nm.

Claim 11

The magnetic element of claim 9 wherein the magnetic element has a depth of approximately 50 nm.

Claim 12

A magnetic memory device comprising: a plurality of magnetic cells including a plurality of magnetic elements, each of the plurality of magnetic elements including a first pinned layer, a nonmagnetic spacer layer, a free layer, a barrier layer, and a second pinned layer, the first pinned layer being ferromagnetic and having a first magnetization, the first magnetization being pinned in a first direction, the nonmagnetic spacer layer being conductive and residing between the first pinned layer and the free layer, the free layer being ferromagnetic and having a second magnetization, the barrier layer being an insulator and having a thickness that allows tunneling through the barrier layer, the second pinned layer being ferromagnetic and having a third magnetization pinned in a second direction, the barrier layer being between the free layer and the second pinned layer, each of the plurality of magnetic elements being configured such that the second magnetization of the free layer can change direction due to spin transfer when a write current is passed through the magnetic element; a plurality of row lines coupled to the plurality of magnetic cells; and a plurality of column lines coupled with the plurality of cells, the plurality of row lines and the plurality of column lines for selecting a portion of the plurality of magnetic cells for reading and writing.

Claim 13

A magnetic memory device comprising: a plurality of magnetic cells including a plurality of magnetic elements, each of the plurality of magnetic elements including a first pinned layer, a nonmagnetic spacer layer, a free layer, a barrier layer, and a second pinned layer, the first pinned layer being ferromagnetic and having a first magnetization, the first magnetization being pinned in a first direction, the nonmagnetic spacer layer being conductive and residing between the first pinned layer and the free layer, the free layer being ferromagnetic and having a second magnetization, the barrier layer being an insulator and having a thickness that allows tunneling through the barrier layer, the second pinned layer being ferromagnetic and having a third magnetization pinned in a second direction, the barrier layer being between the free layer and the second pinned layer, each of the plurality of magnetic elements being configured such that the second magnetization of the free layer can change direction due to spin transfer when a write current is passed through the magnetic element; a plurality of row lines coupled to the plurality of magnetic cells; and a plurality of column lines coupled with the plurality of cells, the plurality of row lines and the plurality of column lines for selecting a portion of the plurality of magnetic cells for reading and writing.

Claim 14

The magnetic memory device of claim 11 wherein the magnetic memory is configured to write to the portion of the plurality of magnetic cells without requiring the use of additional lines.

Claim 15

The magnetic memory device of claim 11 wherein the first direction of the first magnetization of the first pinned layer is opposite to the second direction of the third magnetization of the second pinned layer.

Claim 16

The magnetic memory device of claim 11 wherein each of the plurality of magnetic elements further include: a first antiferromagnetic layer adjacent to the first pinned layer, the first antiferromagnetic layer for pinning the first magnetization of the first pinned layer; and a second antiferromagnetic layer adjacent to the second pinned layer, the second antiferromagnetic layer for pinning the third magnetization of the second pinned layer.

Claim 17

The magnetic memory device of claim 14 wherein the first antiferromagnetic layer and the second antiferromagnetic layer include PtMn.

Claim 18

The magnetic memory device of claim 14 wherein the first antiferromagnetic layer has a first blocking temperature, the second antiferromagnetic layer has a second blocking temperature, the second blocking temperature being different from the first blocking temperature.

Claim 19

The magnetic memory device of claim 11 wherein the first pinned layer is a synthetic pinned layer.

Claim 20

The magnetic memory device of claim 11 wherein the second pinned layer is a synthetic pinned layer.

Claim 21

The magnetic memory device of claim 11 wherein each of the plurality of magnetic elements has a width of less than or equal to 200 nm.

Claim 22

The magnetic memory device of claim 19 wherein each of the plurality of magnetic elements has a width of approximately 100 nm.

Claim 23

The magnetic memory device of claim 20 wherein the magnetic element has a depth of approximately 50 nm.