Patent US828930A successfully refreshed from Google Patents.
Patent US6713333B2 successfully refreshed from Google Patents.
US6713333B2
Expired / Lapsed
US
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Method for fabricating a MOSFET
Assignee: Renesas Electronics Corp
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Filing: 2002-10-23
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Granted: 2004-03-30
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Expires: 2022-10-23
Abstract
Abstract The disclosed invention provides a method for fabricating a MOSFET comprising the steps of forming a first insulation layer over a semiconductor substrate; forming a trench which bottoms on the semiconductor substrate in the first insulation layer so that the semiconductor substrate is exposed at the bottom of the trench; injecting impurities selectively under at least one end of the exposed surface of the semiconductor substrate; forming a second insulation layer to cover the bottom surface of the trench by oxidizing the exposed surface of the semiconductor substrate; forming a gate electrode over the second insulation layer inside the trench; removing the first insulation layer; forming a drain region under the surface of the semiconductor substrate so that the drain region contacts with one end of the second insulation layer, the end under which the impurities were injected; and forming a source region under the surface of the semiconductor substrate so that the source region contacts with the other end of the second insulation layer, the end opposite to the end under which the impurities were injected.
Inventors
- 👤 Satoru Mayuzumi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:20
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01348; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0225; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/514; H10D64/516; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0144; H10D84/0151; H10D84/02; H10D84/03; H10D84/038; H10P; H10P30/00; H10P30/20; H10P30/22; H10P30/221; H10P30/222; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10D64/693; H10P30/202; H10P30/204; H10P30/208; Y; Y10; Y10S; Y10S438/00; Y10S438/981
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
184 words
A method for fabricating a MOSFET comprising the steps of: forming a first insulation layer over a semiconductor substrate; selectively forming a trench in said first insulation layer to define a part of said semiconductor substrate as a gate formation region, said gate formation region having a central portion and end portions sandwiching said central portion; injecting oxidation enhancing impurities into said end portions of said gate formation region while suppressing injection of said oxidation enhancing impurities into said central portion of said gate formation region; forming a second insulation layer on said gate formation region, said second insulation layer thereby having a first part on said central portion of said gate formation region and second parts on said end portions of said gate forming region which are larger in thickness than said first part; forming a gate electrode on said second insulation layer; and forming source and drain regions by using said gate electrode as a mask so that each of said source and drain regions is formed in contact with an associated one of said end parts of said second insulation layer.
Claim 2
Independent Claim
184 words
A method for fabricating a MOSFET comprising the steps of: forming a first insulation layer over a semiconductor substrate; selectively forming a trench in said first insulation layer to define a part of said semiconductor substrate as a gate formation region, said gate formation region having a central portion and end portions sandwiching said central portion; injecting oxidation enhancing impurities into said end portions of said gate formation region while suppressing injection of said oxidation enhancing impurities into said central portion of said gate formation region; forming a second insulation layer on said gate formation region, said second insulation layer thereby having a first part on said central portion of said gate formation region and second parts on said end portions of said gate forming region which are larger in thickness than said first part; forming a gate electrode on said second insulation layer; and forming source and drain regions by using said gate electrode as a mask so that each of said source and drain regions is formed in contact with an associated one of said end parts of said second insulation layer.
Claim 3
Dependent Claim
48 words
A method for fabricating a MOSFET as recited in claim 1 , wherein said first insulation layer is used as a mask and said oxidation enhancing impurities are injected in a direction at an angle with respect to a direction perpendicular to the surface of said semiconductor substrate.
Claim 4
Dependent Claim
69 words
A method for fabricating a MOSFET as recited in claim 1 , wherein said step of injecting oxidation enhancing impurities comprises the steps of: forming a resist over said first insulation layer; forming an opening in the resist in a region above said trench; and injecting said oxidation enhancing impurities in a direction at an angle with respect to a direction perpendicular to the surface of said semiconductor substrate.
Claim 5
Dependent Claim
40 words
A method for fabricating a MOSFET as recited in claim 1 , wherein said oxidation enhancing impurities are one type of element or consist of two or more types of elements selected from a group comprising argon, silicon and halogen.
Claim 6
Dependent Claim
67 words
A method for fabricating a MOSFET as recited in claim 1 , wherein said method includes: a step of forming a third insulation layer after said step of forming a trench and before said step of injecting oxidation enhancing impurities; and a step of removing said third insulation layer after said step of injecting oxidation enhancing impurities and before said step of forming a second insulation layer.
Claim 7
Dependent Claim
48 words
A method for fabricating a MOSFET as recited in claim 1 , wherein said step of forming a gate electrode comprises the steps of: forming a conductive layer over said first insulation layer and inside said trench; and removing said conductive layer formed over said first insulation layer.
Claim 8
Dependent Claim
49 words
A method for fabricating a MOSFET as recited in claim 1 , wherein said gate electrode is one type of film or a laminated film consisting of two or more types of film selected from a group comprising a metal film, polycrystalline silicon film, suicide film and SiGe film.
Claim 9
Dependent Claim
28 words
A method for fabricating a MOSFET as recited in claim 1 , wherein said first insulation layer is a lamination of a plurality of layers of insulation film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-03-30 | 2007-09-29 | 2008-03-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-03-30 | 2011-09-29 | 2012-03-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-03-30 | 2015-09-29 | 2016-03-30 | $7700.00 | Window Closed / Lapsed |