Patent US6696332B2 successfully refreshed from Google Patents.
US6696332B2
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Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing
Assignee: Texas Instruments Inc
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Filing: 2002-06-21
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Granted: 2004-02-24
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Expires: 2022-06-21
Abstract
Abstract Methods are disclosed for forming gate dielectrics for MOSFET transistors, wherein a bilayer deposition of a nitride layer and an oxide layer are used to form a gate dielectric stack. The nitride layer is formed on the substrate to prevent oxidation of the substrate material during deposition of the oxide layer, thereby avoiding or mitigating formation of low-k interfacial layer.
Inventors
- 👤 Mark Robert Visokay
- 👤 Antonio Luis Pacheco Rotondaro
- 👤 Luigi Colombo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:09
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/01344; H10D64/01352; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D64/693; H10D64/031; H10D64/033; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/21; H10P30/212; H10P30/28
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
85 words
A method of fabricating a MOSFET gate dielectric structure in a semiconductor device, comprising: forming a nitride layer on an upper surface of a semiconductor substrate, the nitride layer substantially overlying a channel region of the substrate wherein forming the nitride layer comprises depositing one of hafnium silicon nitride, zirconium silicon nitride, hafnium nitride, and zirconium nitride over the upper surface of the substrate; forming an oxide layer over the nitride layer; and patterning the oxide and nitride layers to form a gate dielectric structure.
Claim 2
Independent Claim
85 words
A method of fabricating a MOSFET gate dielectric structure in a semiconductor device, comprising: forming a nitride layer on an upper surface of a semiconductor substrate, the nitride layer substantially overlying a channel region of the substrate wherein forming the nitride layer comprises depositing one of hafnium silicon nitride, zirconium silicon nitride, hafnium nitride, and zirconium nitride over the upper surface of the substrate; forming an oxide layer over the nitride layer; and patterning the oxide and nitride layers to form a gate dielectric structure.
Claim 3
Dependent Claim
44 words
The method of claim 1 , wherein forming the oxide layer comprises depositing one of tantalum pentoxide, titanium dioxide, barium strontium titanate, hafnium oxide, zirconium oxide, aluminum oxide, hafnium silicon oxide, zirconium silicon oxide, hafnium aluminum oxide, zirconium aluminum oxide, and strontium titanium oxide.
Claim 4
Dependent Claim
22 words
The method of claim 2 , further comprising oxidizing at least a portion of the nitride layer substantially without oxidizing the substrate.
Claim 5
Dependent Claim
27 words
The method of claim 3 , wherein oxidizing at least a portion of the nitride layer comprises annealing the substrate following the formation of the oxide layer.
Claim 6
Dependent Claim
26 words
The method of claim 3 , wherein oxidizing at least a portion of the nitride layer comprises depositing the oxide layer using an oxidizing deposition process.
Claim 7
Dependent Claim
25 words
The method of claim 5 , wherein oxidizing at least a portion of the nitride layer comprises depositing the oxide layer in an oxidizing ambient.
Claim 8
Dependent Claim
22 words
The method of claim 1 , further comprising oxidizing at least a portion of the nitride layer without substantially oxidizing the substrate.
Claim 9
Dependent Claim
26 words
The method of claim 7 , wherein oxidizing at least a portion of the nitride layer comprises depositing the oxide layer using an oxidizing deposition process.
Claim 10
Dependent Claim
25 words
The method of claim 8 , wherein oxidizing at least a portion of the nitride layer comprises depositing the oxide layer in an oxidizing ambient.
Claim 11
Dependent Claim
27 words
The method of claim 7 , wherein oxidizing at least a portion of the nitride layer comprises annealing the substrate following the formation of the oxide layer.
Claim 12
Dependent Claim
29 words
The method of claim 1 , wherein forming the nitride layer comprises depositing nitride on the substrate using one of a chemical vapor deposition process and a sputtering process.
Claim 13
Dependent Claim
30 words
The method of claim 11 , wherein forming the oxide layer comprises depositing oxide over the nitride layer using one of a chemical vapor deposition process and a sputtering process.
References Cited (Backward Citations)
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