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US6649448B2 Expired / Lapsed US ⏱️ 0.0 years remaining

Method of manufacturing a semiconductor device having flexible wiring substrate

Assignee: Renesas Semiconductor Package and Test Solutions Co Ltd
•
Filing: 2001-09-25
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Granted: 2003-11-18
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Expires: 2021-09-25
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Abstract

Abstract Peeling between a molding resin and a substrate is prevented to improve the quality of a semiconductor device. A film substrate capable of being deformed following shrinkage upon curing of a molding resin and having plural partitioned device areas is provided. Then, a block molding is performed so as to cover the plural device areas in a lump on a chip bearing surface side of the film substrate. Thereafter the film substrate is subjected to dicing wherein a cutting blade is advanced toward a block molding portion to divide the film substrate device area by device area in accordance with a down cutting method, whereby peeling of the substrate in the dicing work can be prevented.

Inventors

  • 👤 Seiichi Tomihara

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 11:10
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/0011; H05K3/0044; H05K3/0052; H10; H10W; H10W74/00; H10W74/10; H10W70/00; H10W70/60; H10W70/67; H10W70/688; H10W74/01; H10W74/014; H10W74/111; H10W74/114; H10W74/117; H05K2201/00; H05K2201/09; H05K2201/09009; H05K2201/09036; H05K2201/09063; H05K2201/0909; H05K2203/00; H05K2203/17; H05K2203/175; H05K3/22; H05K3/24; H05K3/241; H05K3/242; H05K3/28; H05K3/284; H10W72/00; H10W72/01; H10W72/0198; H10W72/071; H10W72/073; H10W72/07331; H10W72/07337; H10W72/30; H10W72/351; H10W72/353; H10W72/354; H10W72/50; H10W72/531; H10W72/5366; H10W72/551; H10W72/552; H10W72/5522; H10W72/5525; H10W72/851; H10W72/874; H10W72/884; H10W74/127; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/751; H10W90/754

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 230 words
A method of manufacturing a semiconductor device, comprising the steps of: providing a flexible Wiring substrate having a front surface, a back surface opposite from the front surface, a plurality of device areas of the front surface thereof and a plurality of electrodes formed on each device area; providing semiconductor chips each having a main surface, a back surface opposed of the main surface thereof and a plurality of electrodes formed on the main surface; mounting the semiconductor chips respectively on the device areas of the front surface of the flexible wiring substrate; connecting electrodes of the semiconductor chips with the electrodes of the flexible wiring substrate on respective device areas of the front surface of the flexible wiring substrate by means of conductive members; sealing the semiconductor chips and the plural device areas of the front surface of the flexible wiring substrate by a resin body formed according to a block molding method; cutting the flexible wiring substrate and the resin body to divide them between respective device areas of the front surface of the flexible wiring substrate using a cutting blade, wherein, in the cutting step, a rotation axis of the cutting blade is positioned over the back surface of the flexible wiring substrate, and moving the cutting blade while feeding the wiring substrate and the resin body in a same direction as rotation of the cutting blade.
Claim 2
Independent Claim 230 words
A method of manufacturing a semiconductor device, comprising the steps of: providing a flexible Wiring substrate having a front surface, a back surface opposite from the front surface, a plurality of device areas of the front surface thereof and a plurality of electrodes formed on each device area; providing semiconductor chips each having a main surface, a back surface opposed of the main surface thereof and a plurality of electrodes formed on the main surface; mounting the semiconductor chips respectively on the device areas of the front surface of the flexible wiring substrate; connecting electrodes of the semiconductor chips with the electrodes of the flexible wiring substrate on respective device areas of the front surface of the flexible wiring substrate by means of conductive members; sealing the semiconductor chips and the plural device areas of the front surface of the flexible wiring substrate by a resin body formed according to a block molding method; cutting the flexible wiring substrate and the resin body to divide them between respective device areas of the front surface of the flexible wiring substrate using a cutting blade, wherein, in the cutting step, a rotation axis of the cutting blade is positioned over the back surface of the flexible wiring substrate, and moving the cutting blade while feeding the wiring substrate and the resin body in a same direction as rotation of the cutting blade.
Claim 3
Dependent Claim 112 words
A method of manufacturing a semiconductor device according to claim 1 , wherein, in the mounting step, facing the surface of the semiconductor chip to corresponding device area of the front surface of the flexible wiring substrate, and arranging the semiconductor chip as the electrodes of the flexible wiring substrate is positioned at the outside of corresponding semiconductor chips, wherein, in the connecting step, connecting the electrodes of the semiconductor chips with the electrodes of the flexible wiring substrate by wire bonding method with a plurality of wires, and wherein, in the sealing step, sealing connecting portions of the wires and the electrodes of the flexible wiring substrate by the resin body.
Claim 4
Dependent Claim 47 words
A method of manufacturing a semiconductor device according to claim 2 , wherein, in the cutting step, cutting all outlines of device areas with moving the cutting blade while feeding the wiring substrate and the resin body in a same direction as rotation of the cutting blade.
Claim 5
Dependent Claim 23 words
A method of manufacturing a semiconductor device according to claim 2 , wherein the flexible wiring substrate is comprised of a polyimide film.
Claim 6
Dependent Claim 23 words
A method of manufacturing a semiconductor device according to claim 3 , wherein the flexible wiring substrate is comprised of a polyimide film.

References Cited (Backward Citations)

JPS5667934A Cited
US5970320A Cited
JPH09205071A Cited
US5985695A Cited
JPH11214588A Cited
US6166433A Cited
JP2000124163A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2006-11-17 2007-05-19 2007-11-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2010-11-17 2011-05-19 2011-11-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2014-11-17 2015-05-19 2015-11-18 $7700.00 Window Closed / Lapsed

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