US6607948B1
Expired / Lapsed
US
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Method of manufacturing a substrate using an SiGe layer
Assignee: Toshiba Corp
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Filing: 2001-08-24
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Granted: 2003-08-19
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Expires: 2021-08-24
Abstract
Abstract A semiconductor device comprises a base substrate, a silicon oxide layer formed on the base substrate, a first semiconductor layer formed on the silicon oxide layer, the first semiconductor layer including an SiGe layer with a Ge concentration not less than 30 atomic %, a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer including a Ge layer or an SiGe layer with a Ge concentration higher than the first semiconductor layer, a gate electrode configured to induce a channel in a surface region of the second semiconductor layer, and a gate insulating film formed between the second semiconductor layer and the gate electrode.
Inventors
- 👤 Naoharu Sugiyama
- 👤 Atsushi Kurobe
- 👤 Tsutomu Tezuka
- 👤 Tomohisa Mizuno
- 👤 Shinichi Takagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:08
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/025; H10D30/031; H10D30/60; H10D30/601; H10D30/63; H10D30/67; H10D30/674; H10D30/6741; H10D30/6748; H10D30/751; H10D30/791; H10D30/797; H10D30/798; H10D62/00; H10D62/80; H10D62/82; H10D62/822; H10D64/00; H10D64/01; H10D64/013; H10D64/01356; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10D64/681; H10D64/685; H10P14/6322; Y; Y10; Y10S; Y10S438/00; Y10S438/938
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
61 words
A method of manufacturing a substrate comprising: forming a laminated layer including an amorphous layer containing silicon and oxygen and an SiGe layer, the amorphous layer containing silicon and oxygen being located between a base substrate and the SiGe layer; and oxidizing the SiGe layer to form a silicon oxide layer and to increase a Ge concentration of the SiGe layer.
Claim 2
Independent Claim
61 words
A method of manufacturing a substrate comprising: forming a laminated layer including an amorphous layer containing silicon and oxygen and an SiGe layer, the amorphous layer containing silicon and oxygen being located between a base substrate and the SiGe layer; and oxidizing the SiGe layer to form a silicon oxide layer and to increase a Ge concentration of the SiGe layer.
Claim 3
Independent Claim
61 words
A method of manufacturing a substrate comprising: forming a laminated layer including a layer containing silicon, oxygen and germanium and an SiGe layer, the layer containing silicon, oxygen and germanium being located between a base substrate and the SiGe layer; and oxidizing the SiGe layer to form a silicon oxide layer and to increase a Ge concentration of the SiGe layer.
Claim 4
Independent Claim
61 words
A method of manufacturing a substrate comprising: forming a laminated layer including a layer containing silicon, oxygen and germanium and an SiGe layer, the layer containing silicon, oxygen and germanium being located between a base substrate and the SiGe layer; and oxidizing the SiGe layer to form a silicon oxide layer and to increase a Ge concentration of the SiGe layer.
Claim 5
Independent Claim
78 words
A method of manufacturing a substrate comprising: forming a laminated layer including a layer containing silicon and oxygen, an SiGe layer and an Si layer, the layer containing silicon and oxygen being located between a base substrate and the SiGe layer, the Si layer being located between the layer containing silicon and oxygen and the SiGe layer; and oxidizing the SiGe layer to form a silicon oxide layer and to increase a Ge concentration of the SiGe layer.
Claim 6
Independent Claim
78 words
A method of manufacturing a substrate comprising: forming a laminated layer including a layer containing silicon and oxygen, an SiGe layer and an Si layer, the layer containing silicon and oxygen being located between a base substrate and the SiGe layer, the Si layer being located between the layer containing silicon and oxygen and the SiGe layer; and oxidizing the SiGe layer to form a silicon oxide layer and to increase a Ge concentration of the SiGe layer.
Claim 7
Independent Claim
91 words
A method of manufacturing a substrate comprising: forming a laminated layer including a layer containing silicon and oxygen and an SiGe layer, the layer containing silicon and oxygen being located between a base substrate and the SiGe layer; oxidizing the SiGe layer to form a silicon oxide layer and to increase a Ge concentration of the SiGe layer; removing the silicon oxide layer on the SiGe layer after the oxidizing to expose a surface of the SiGe layer; and forming a semiconductor layer on the exposed surface of the SiGe layer.
Claim 8
Independent Claim
91 words
A method of manufacturing a substrate comprising: forming a laminated layer including a layer containing silicon and oxygen and an SiGe layer, the layer containing silicon and oxygen being located between a base substrate and the SiGe layer; oxidizing the SiGe layer to form a silicon oxide layer and to increase a Ge concentration of the SiGe layer; removing the silicon oxide layer on the SiGe layer after the oxidizing to expose a surface of the SiGe layer; and forming a semiconductor layer on the exposed surface of the SiGe layer.
Claim 9
Independent Claim
92 words
A method of manufacturing a substrate comprising: forming a laminated layer including a layer containing a silicon and oxygen and an SiGe layer, the layer containing silicon and oxygen being located between a base substrate and the SiGe layer; oxidizing the SiGe layer to form a silicon oxide layer and to increase a Ge concentration of the SiGe layer; and forming a semiconductor layer on the SiGe layer after oxidizing the semiconductor layer including a Ge layer or an SiGe layer showing a Ge concentration higher than the SiGe layer after oxidizing.
Claim 10
Independent Claim
92 words
A method of manufacturing a substrate comprising: forming a laminated layer including a layer containing a silicon and oxygen and an SiGe layer, the layer containing silicon and oxygen being located between a base substrate and the SiGe layer; oxidizing the SiGe layer to form a silicon oxide layer and to increase a Ge concentration of the SiGe layer; and forming a semiconductor layer on the SiGe layer after oxidizing the semiconductor layer including a Ge layer or an SiGe layer showing a Ge concentration higher than the SiGe layer after oxidizing.
Claim 11
Independent Claim
79 words
A method of manufacturing a substrate comprising: forming a laminated layer including a layer containing silicon and oxygen and an SiGe layer, the layer containing silicon and oxygen being located between a base substrate and the SiGe layer; oxidizing the SiGe layer to form a silicon oxide layer and to increase a Ge concentration of the SiGe layer; and forming a semiconductor layer on the SiGe layer after the oxidizing, the semiconductor layer including a strained crystal Si layer.
Claim 12
Independent Claim
79 words
A method of manufacturing a substrate comprising: forming a laminated layer including a layer containing silicon and oxygen and an SiGe layer, the layer containing silicon and oxygen being located between a base substrate and the SiGe layer; oxidizing the SiGe layer to form a silicon oxide layer and to increase a Ge concentration of the SiGe layer; and forming a semiconductor layer on the SiGe layer after the oxidizing, the semiconductor layer including a strained crystal Si layer.
Claim 13
Dependent Claim
22 words
The method according to claim 6 , further comprising forming a MISFET using the strained crystal Si layer as a channel layer.
Claim 14
Dependent Claim
24 words
The method according to claim 2 , wherein the layer containing silicon, oxygen, and germanium is a crystal silicon layer containing oxygen and germanium.
Claim 15
Dependent Claim
21 words
The method according to claim 3 , wherein the layer containing silicon and oxygen is a crystal silicon layer containing oxygen.
Claim 16
Dependent Claim
22 words
The method according to claim 4 , wherein the layer containing a silicon and oxygen is a crystal silicon layer containing oxygen.
Claim 17
Dependent Claim
21 words
The method according to claim 5 , wherein the layer containing silicon and oxygen is a crystal silicon layer containing oxygen.
Claim 18
Dependent Claim
21 words
The method according to claim 6 , wherein the layer containing silicon and oxygen is a crystal silicon layer containing oxygen.
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